FR2315169A1 - Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances - Google Patents

Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances

Info

Publication number
FR2315169A1
FR2315169A1 FR7615006A FR7615006A FR2315169A1 FR 2315169 A1 FR2315169 A1 FR 2315169A1 FR 7615006 A FR7615006 A FR 7615006A FR 7615006 A FR7615006 A FR 7615006A FR 2315169 A1 FR2315169 A1 FR 2315169A1
Authority
FR
France
Prior art keywords
manufacturing process
high performance
integrated bipolar
complementary integrated
pole transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615006A
Other languages
English (en)
French (fr)
Other versions
FR2315169B1 (enExample
Inventor
Ingrid E Magdo
Steven Magdo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2315169A1 publication Critical patent/FR2315169A1/fr
Application granted granted Critical
Publication of FR2315169B1 publication Critical patent/FR2315169B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7615006A 1975-06-19 1976-05-13 Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances Granted FR2315169A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/588,524 US3955269A (en) 1975-06-19 1975-06-19 Fabricating high performance integrated bipolar and complementary field effect transistors

Publications (2)

Publication Number Publication Date
FR2315169A1 true FR2315169A1 (fr) 1977-01-14
FR2315169B1 FR2315169B1 (enExample) 1978-05-19

Family

ID=24354203

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615006A Granted FR2315169A1 (fr) 1975-06-19 1976-05-13 Procede de fabrication de transistors bipolaires et unipolaires complementaires integres a hautes performances

Country Status (7)

Country Link
US (1) US3955269A (enExample)
JP (1) JPS522292A (enExample)
CA (1) CA1048656A (enExample)
DE (1) DE2626193A1 (enExample)
FR (1) FR2315169A1 (enExample)
GB (1) GB1488239A (enExample)
IT (1) IT1063564B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51101478A (enExample) * 1975-03-04 1976-09-07 Suwa Seikosha Kk
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
JPS5371582A (en) * 1976-12-08 1978-06-26 Fujitsu Ltd Manufacture of semiconductor device
JPS5931052A (ja) * 1982-08-13 1984-02-18 Hitachi Ltd 半導体集積回路装置の製造方法
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
JPS6072243A (ja) * 1983-09-28 1985-04-24 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US4999761A (en) * 1985-10-01 1991-03-12 Maxim Integrated Products Integrated dual charge pump power supply and RS-232 transmitter/receiver
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
US4929570A (en) * 1986-10-06 1990-05-29 National Semiconductor Corporation Selective epitaxy BiCMOS process
JPS6449273A (en) * 1987-08-19 1989-02-23 Mitsubishi Electric Corp Semiconductor device and its manufacture
US4857766A (en) * 1987-10-30 1989-08-15 International Business Machine Corporation BiMos input circuit
US5173435A (en) * 1987-11-11 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
US5139961A (en) * 1990-04-02 1992-08-18 National Semiconductor Corporation Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base
US5079182A (en) * 1990-04-02 1992-01-07 National Semiconductor Corporation Bicmos device having self-aligned well tap and method of fabrication
US5219784A (en) * 1990-04-02 1993-06-15 National Semiconductor Corporation Spacer formation in a bicmos device
US5045483A (en) * 1990-04-02 1991-09-03 National Semiconductor Corporation Self-aligned silicided base bipolar transistor and resistor and method of fabrication
EP0450503A3 (en) * 1990-04-02 1992-05-20 National Semiconductor Corporation Semiconductor devices with borosilicate glass sidewall spacers and method of fabrication
US5234847A (en) * 1990-04-02 1993-08-10 National Semiconductor Corporation Method of fabricating a BiCMOS device having closely spaced contacts
KR100234550B1 (ko) * 1990-04-02 1999-12-15 클라크 3세 존 엠 증가된 항복 전압을 지닌 트랜지스터 디바이스 및 제조방법
EP0452720A3 (en) * 1990-04-02 1994-10-26 Nat Semiconductor Corp A semiconductor structure and method of its manufacture
US5231042A (en) * 1990-04-02 1993-07-27 National Semiconductor Corporation Formation of silicide contacts using a sidewall oxide process
US5139966A (en) * 1990-04-02 1992-08-18 National Semiconductor Corporation Low resistance silicided substrate contact
US5107321A (en) * 1990-04-02 1992-04-21 National Semiconductor Corporation Interconnect method for semiconductor devices
US5071778A (en) * 1990-06-26 1991-12-10 National Semiconductor Corporation Self-aligned collector implant for bipolar transistors
US5225359A (en) * 1990-08-17 1993-07-06 National Semiconductor Corporation Method of fabricating Schottky barrier diodes and Schottky barrier diode-clamped transistors
US5109256A (en) * 1990-08-17 1992-04-28 National Semiconductor Corporation Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
US5169794A (en) * 1991-03-22 1992-12-08 National Semiconductor Corporation Method of fabrication of pnp structure in a common substrate containing npn or MOS structures
US5286991A (en) * 1992-08-26 1994-02-15 Pioneer Semiconductor Corporation Capacitor for a BiCMOS device
US5325268A (en) * 1993-01-28 1994-06-28 National Semiconductor Corporation Interconnector for a multi-chip module or package
JP2004172389A (ja) * 2002-11-20 2004-06-17 Renesas Technology Corp 半導体装置およびその製造方法
DE10330595A1 (de) * 2003-07-07 2005-02-17 Siemens Ag Röntgendetektor und Verfahren zur Herstellung von Röntgenbildern mit spektraler Auflösung
CN103199091B (zh) * 2012-01-10 2015-12-09 旺宏电子股份有限公司 半导体结构及其制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2138904A1 (enExample) * 1971-05-22 1973-01-05 Philips Nv
DE2318179A1 (de) * 1972-04-14 1973-10-18 Philips Nv Halbleiteranordnung und verfahren zur herstellung dieser anordnung
FR2225843A1 (enExample) * 1973-04-16 1974-11-08 Ibm

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404450A (en) * 1966-01-26 1968-10-08 Westinghouse Electric Corp Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions
FR1559611A (enExample) * 1967-06-30 1969-03-14
US3590343A (en) * 1969-01-31 1971-06-29 Westinghouse Electric Corp Resonant gate transistor with fixed position electrically floating gate electrode in addition to resonant member
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2138904A1 (enExample) * 1971-05-22 1973-01-05 Philips Nv
DE2318179A1 (de) * 1972-04-14 1973-10-18 Philips Nv Halbleiteranordnung und verfahren zur herstellung dieser anordnung
FR2225843A1 (enExample) * 1973-04-16 1974-11-08 Ibm

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
"FORMING BIPOLAR AND COMPLEMENTARY FIELD-EFFECT TRANSISTORS IN THE SAME SUBSTRATE" R.T. MA. ET AL, PAGES 2287-2288 *
*REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOLUME 17, NO. 1, JUIN 1974: "INTEGRATED COMPLEMENTARY FIELD-EFFECT AND BIPOLAR TRANSISTOR PROCESS" F. BARSON, PAGES 86-87 *
REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOLUME 16, NO. 7, DECEMBRE 1973 *
REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOLUME 17, NO. 1, JUIN 1974: "FABRICATING ENHANCEMENT AND DEPLETION MODE FIELD-EFFECT TRANSISTORS AND SCHOTTKY COLLECTOR BIPOLAR TRANSISTOR", I. ANTIPOV, PAGES 102-103) *

Also Published As

Publication number Publication date
US3955269A (en) 1976-05-11
JPS5346705B2 (enExample) 1978-12-15
FR2315169B1 (enExample) 1978-05-19
JPS522292A (en) 1977-01-08
CA1048656A (en) 1979-02-13
DE2626193A1 (de) 1976-12-30
IT1063564B (it) 1985-02-11
GB1488239A (en) 1977-10-12

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