DE2540350B2 - Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren - Google Patents
Halbleiterschaltung mit einer Matrix aus Isolierschicht-FeldeffekttransistorenInfo
- Publication number
- DE2540350B2 DE2540350B2 DE2540350A DE2540350A DE2540350B2 DE 2540350 B2 DE2540350 B2 DE 2540350B2 DE 2540350 A DE2540350 A DE 2540350A DE 2540350 A DE2540350 A DE 2540350A DE 2540350 B2 DE2540350 B2 DE 2540350B2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistors
- transistors
- matrix
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49103927A JPS5947464B2 (ja) | 1974-09-11 | 1974-09-11 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2540350A1 DE2540350A1 (de) | 1976-04-01 |
DE2540350B2 true DE2540350B2 (de) | 1980-07-03 |
Family
ID=14367051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2540350A Withdrawn DE2540350B2 (de) | 1974-09-11 | 1975-09-10 | Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5947464B2 (enrdf_load_stackoverflow) |
DE (1) | DE2540350B2 (enrdf_load_stackoverflow) |
GB (1) | GB1519995A (enrdf_load_stackoverflow) |
HK (1) | HK35281A (enrdf_load_stackoverflow) |
MY (1) | MY8200018A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4080718A (en) * | 1976-12-14 | 1978-03-28 | Smc Standard Microsystems Corporation | Method of modifying electrical characteristics of MOS devices using ion implantation |
IT1097967B (it) * | 1977-07-18 | 1985-08-31 | Mostek Corp | Procedimnto e struttura per l'incrocio di segnali di informazione in un dispositivo a circuito integrato |
DE3044984A1 (de) | 1979-11-30 | 1982-04-15 | Dassault Electronique | Integrierte transistorschaltung, insbesondere fuer codierung |
FR2471083A1 (fr) * | 1979-11-30 | 1981-06-12 | Dassault Electronique | Dispositif de circuit integre a transistors mos, utilisable notamment pour le codage |
US4319396A (en) * | 1979-12-28 | 1982-03-16 | Bell Telephone Laboratories, Incorporated | Method for fabricating IGFET integrated circuits |
JPS6028145B2 (ja) * | 1983-08-24 | 1985-07-03 | 株式会社日立製作所 | Mis形半導体装置の製造法 |
JPS6028144B2 (ja) * | 1983-08-24 | 1985-07-03 | 株式会社日立製作所 | Mis形半導体装置の製法 |
JPS6133013A (ja) * | 1984-07-25 | 1986-02-15 | Nec Corp | リング発振器 |
JPH0783062B2 (ja) * | 1985-06-18 | 1995-09-06 | 株式会社東芝 | マスタ−スライス型半導体装置 |
FR2716586B1 (fr) * | 1994-02-23 | 1996-04-05 | Bull Sa | Porte ou-Exclusif intégrée dans un semi-conducteur III-V. |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS559417B2 (enrdf_load_stackoverflow) * | 1971-10-09 | 1980-03-10 | ||
JPS5232557B2 (enrdf_load_stackoverflow) * | 1972-03-14 | 1977-08-22 | ||
JPS4924330A (enrdf_load_stackoverflow) * | 1972-06-28 | 1974-03-04 |
-
1974
- 1974-09-11 JP JP49103927A patent/JPS5947464B2/ja not_active Expired
-
1975
- 1975-09-10 DE DE2540350A patent/DE2540350B2/de not_active Withdrawn
- 1975-09-11 GB GB37389/75A patent/GB1519995A/en not_active Expired
-
1981
- 1981-07-23 HK HK352/81A patent/HK35281A/xx unknown
-
1982
- 1982-12-30 MY MY18/82A patent/MY8200018A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1519995A (en) | 1978-08-02 |
MY8200018A (en) | 1982-12-31 |
HK35281A (en) | 1981-07-31 |
JPS5947464B2 (ja) | 1984-11-19 |
JPS5131180A (enrdf_load_stackoverflow) | 1976-03-17 |
DE2540350A1 (de) | 1976-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OI | Miscellaneous see part 1 | ||
8230 | Patent withdrawn |