DE2540350B2 - Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren - Google Patents

Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren

Info

Publication number
DE2540350B2
DE2540350B2 DE2540350A DE2540350A DE2540350B2 DE 2540350 B2 DE2540350 B2 DE 2540350B2 DE 2540350 A DE2540350 A DE 2540350A DE 2540350 A DE2540350 A DE 2540350A DE 2540350 B2 DE2540350 B2 DE 2540350B2
Authority
DE
Germany
Prior art keywords
field effect
effect transistors
transistors
matrix
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE2540350A
Other languages
German (de)
English (en)
Other versions
DE2540350A1 (de
Inventor
Hiroto Kodaira Tokio Kawagoe (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2540350A1 publication Critical patent/DE2540350A1/de
Publication of DE2540350B2 publication Critical patent/DE2540350B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE2540350A 1974-09-11 1975-09-10 Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren Withdrawn DE2540350B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49103927A JPS5947464B2 (ja) 1974-09-11 1974-09-11 半導体装置

Publications (2)

Publication Number Publication Date
DE2540350A1 DE2540350A1 (de) 1976-04-01
DE2540350B2 true DE2540350B2 (de) 1980-07-03

Family

ID=14367051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2540350A Withdrawn DE2540350B2 (de) 1974-09-11 1975-09-10 Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren

Country Status (5)

Country Link
JP (1) JPS5947464B2 (enrdf_load_stackoverflow)
DE (1) DE2540350B2 (enrdf_load_stackoverflow)
GB (1) GB1519995A (enrdf_load_stackoverflow)
HK (1) HK35281A (enrdf_load_stackoverflow)
MY (1) MY8200018A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080718A (en) * 1976-12-14 1978-03-28 Smc Standard Microsystems Corporation Method of modifying electrical characteristics of MOS devices using ion implantation
IT1097967B (it) * 1977-07-18 1985-08-31 Mostek Corp Procedimnto e struttura per l'incrocio di segnali di informazione in un dispositivo a circuito integrato
DE3044984A1 (de) 1979-11-30 1982-04-15 Dassault Electronique Integrierte transistorschaltung, insbesondere fuer codierung
FR2471083A1 (fr) * 1979-11-30 1981-06-12 Dassault Electronique Dispositif de circuit integre a transistors mos, utilisable notamment pour le codage
US4319396A (en) * 1979-12-28 1982-03-16 Bell Telephone Laboratories, Incorporated Method for fabricating IGFET integrated circuits
JPS6028145B2 (ja) * 1983-08-24 1985-07-03 株式会社日立製作所 Mis形半導体装置の製造法
JPS6028144B2 (ja) * 1983-08-24 1985-07-03 株式会社日立製作所 Mis形半導体装置の製法
JPS6133013A (ja) * 1984-07-25 1986-02-15 Nec Corp リング発振器
JPH0783062B2 (ja) * 1985-06-18 1995-09-06 株式会社東芝 マスタ−スライス型半導体装置
FR2716586B1 (fr) * 1994-02-23 1996-04-05 Bull Sa Porte ou-Exclusif intégrée dans un semi-conducteur III-V.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559417B2 (enrdf_load_stackoverflow) * 1971-10-09 1980-03-10
JPS5232557B2 (enrdf_load_stackoverflow) * 1972-03-14 1977-08-22
JPS4924330A (enrdf_load_stackoverflow) * 1972-06-28 1974-03-04

Also Published As

Publication number Publication date
GB1519995A (en) 1978-08-02
MY8200018A (en) 1982-12-31
HK35281A (en) 1981-07-31
JPS5947464B2 (ja) 1984-11-19
JPS5131180A (enrdf_load_stackoverflow) 1976-03-17
DE2540350A1 (de) 1976-04-01

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Legal Events

Date Code Title Description
OI Miscellaneous see part 1
8230 Patent withdrawn