HK35281A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
HK35281A
HK35281A HK352/81A HK35281A HK35281A HK 35281 A HK35281 A HK 35281A HK 352/81 A HK352/81 A HK 352/81A HK 35281 A HK35281 A HK 35281A HK 35281 A HK35281 A HK 35281A
Authority
HK
Hong Kong
Prior art keywords
relating
semiconductor devices
semiconductor
devices
Prior art date
Application number
HK352/81A
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK35281A publication Critical patent/HK35281A/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK352/81A 1974-09-11 1981-07-23 Improvements in or relating to semiconductor devices HK35281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49103927A JPS5947464B2 (en) 1974-09-11 1974-09-11 semiconductor equipment

Publications (1)

Publication Number Publication Date
HK35281A true HK35281A (en) 1981-07-31

Family

ID=14367051

Family Applications (1)

Application Number Title Priority Date Filing Date
HK352/81A HK35281A (en) 1974-09-11 1981-07-23 Improvements in or relating to semiconductor devices

Country Status (5)

Country Link
JP (1) JPS5947464B2 (en)
DE (1) DE2540350B2 (en)
GB (1) GB1519995A (en)
HK (1) HK35281A (en)
MY (1) MY8200018A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080718A (en) * 1976-12-14 1978-03-28 Smc Standard Microsystems Corporation Method of modifying electrical characteristics of MOS devices using ion implantation
FR2398386A1 (en) * 1977-07-18 1979-02-16 Mostek Corp METHOD AND STRUCTURE FOR CROSSING INFORMATION SIGNALS IN AN INTEGRATED CIRCUIT DEVICE
FR2471083A1 (en) * 1979-11-30 1981-06-12 Dassault Electronique Integrated MOSFET code circuit for e.g. bank card - receives cryptic code and has function of transistors determined by doping to prevent analysis
US4319396A (en) * 1979-12-28 1982-03-16 Bell Telephone Laboratories, Incorporated Method for fabricating IGFET integrated circuits
JPS6028144B2 (en) * 1983-08-24 1985-07-03 株式会社日立製作所 Manufacturing method of MIS type semiconductor device
JPS6028145B2 (en) * 1983-08-24 1985-07-03 株式会社日立製作所 Manufacturing method of MIS type semiconductor device
JPS6133013A (en) * 1984-07-25 1986-02-15 Nec Corp Ring oscillator
JPH0783062B2 (en) * 1985-06-18 1995-09-06 株式会社東芝 Master-slice type semiconductor device
FR2716586B1 (en) * 1994-02-23 1996-04-05 Bull Sa Door-or-Exclusive integrated in a III-V semiconductor.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559417B2 (en) * 1971-10-09 1980-03-10
JPS5232557B2 (en) * 1972-03-14 1977-08-22
JPS4924330A (en) * 1972-06-28 1974-03-04

Also Published As

Publication number Publication date
JPS5131180A (en) 1976-03-17
GB1519995A (en) 1978-08-02
DE2540350B2 (en) 1980-07-03
JPS5947464B2 (en) 1984-11-19
MY8200018A (en) 1982-12-31
DE2540350A1 (en) 1976-04-01

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