JPS5947464B2 - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5947464B2
JPS5947464B2 JP49103927A JP10392774A JPS5947464B2 JP S5947464 B2 JPS5947464 B2 JP S5947464B2 JP 49103927 A JP49103927 A JP 49103927A JP 10392774 A JP10392774 A JP 10392774A JP S5947464 B2 JPS5947464 B2 JP S5947464B2
Authority
JP
Japan
Prior art keywords
insulated gate
type
field effect
misfet
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49103927A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5131180A (enrdf_load_stackoverflow
Inventor
紘人 川越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP49103927A priority Critical patent/JPS5947464B2/ja
Priority to DE2540350A priority patent/DE2540350B2/de
Priority to GB37389/75A priority patent/GB1519995A/en
Publication of JPS5131180A publication Critical patent/JPS5131180A/ja
Priority to US05/934,886 priority patent/US4145701A/en
Priority to HK352/81A priority patent/HK35281A/xx
Priority to MY18/82A priority patent/MY8200018A/xx
Publication of JPS5947464B2 publication Critical patent/JPS5947464B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP49103927A 1974-09-11 1974-09-11 半導体装置 Expired JPS5947464B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP49103927A JPS5947464B2 (ja) 1974-09-11 1974-09-11 半導体装置
DE2540350A DE2540350B2 (de) 1974-09-11 1975-09-10 Halbleiterschaltung mit einer Matrix aus Isolierschicht-Feldeffekttransistoren
GB37389/75A GB1519995A (en) 1974-09-11 1975-09-11 Semiconductor devices
US05/934,886 US4145701A (en) 1974-09-11 1978-08-18 Semiconductor device
HK352/81A HK35281A (en) 1974-09-11 1981-07-23 Improvements in or relating to semiconductor devices
MY18/82A MY8200018A (en) 1974-09-11 1982-12-30 Improvements in or relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49103927A JPS5947464B2 (ja) 1974-09-11 1974-09-11 半導体装置

Publications (2)

Publication Number Publication Date
JPS5131180A JPS5131180A (enrdf_load_stackoverflow) 1976-03-17
JPS5947464B2 true JPS5947464B2 (ja) 1984-11-19

Family

ID=14367051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49103927A Expired JPS5947464B2 (ja) 1974-09-11 1974-09-11 半導体装置

Country Status (5)

Country Link
JP (1) JPS5947464B2 (enrdf_load_stackoverflow)
DE (1) DE2540350B2 (enrdf_load_stackoverflow)
GB (1) GB1519995A (enrdf_load_stackoverflow)
HK (1) HK35281A (enrdf_load_stackoverflow)
MY (1) MY8200018A (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4080718A (en) * 1976-12-14 1978-03-28 Smc Standard Microsystems Corporation Method of modifying electrical characteristics of MOS devices using ion implantation
FR2398386A1 (fr) * 1977-07-18 1979-02-16 Mostek Corp Procede et structure pour faire se croiser des signaux d'information dans un dispositif a circuit integre
DE3044984A1 (de) 1979-11-30 1982-04-15 Dassault Electronique Integrierte transistorschaltung, insbesondere fuer codierung
FR2471083A1 (fr) * 1979-11-30 1981-06-12 Dassault Electronique Dispositif de circuit integre a transistors mos, utilisable notamment pour le codage
US4319396A (en) * 1979-12-28 1982-03-16 Bell Telephone Laboratories, Incorporated Method for fabricating IGFET integrated circuits
JPS6028144B2 (ja) * 1983-08-24 1985-07-03 株式会社日立製作所 Ｍｉｓ形半導体装置の製法
JPS6028145B2 (ja) * 1983-08-24 1985-07-03 株式会社日立製作所 Ｍｉｓ形半導体装置の製造法
JPS6133013A (ja) * 1984-07-25 1986-02-15 Nec Corp リング発振器
JPH0783062B2 (ja) * 1985-06-18 1995-09-06 株式会社東芝 マスタ−スライス型半導体装置
FR2716586B1 (fr) * 1994-02-23 1996-04-05 Bull Sa Porte ou-Exclusif intégrée dans un semi-conducteur III-V.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS559417B2 (enrdf_load_stackoverflow) * 1971-10-09 1980-03-10
JPS5232557B2 (enrdf_load_stackoverflow) * 1972-03-14 1977-08-22
JPS4924330A (enrdf_load_stackoverflow) * 1972-06-28 1974-03-04

Also Published As

Publication number Publication date
HK35281A (en) 1981-07-31
MY8200018A (en) 1982-12-31
DE2540350B2 (de) 1980-07-03
GB1519995A (en) 1978-08-02
DE2540350A1 (de) 1976-04-01
JPS5131180A (enrdf_load_stackoverflow) 1976-03-17

Similar Documents

Publication Publication Date Title
US3641516A (en) Write once read only store semiconductor memory
JPS6041040Y2 (ja) 論理装置
US6097625A (en) Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes
US5241496A (en) Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
KR920008397B1 (ko) 반도체 집적회로 장치
WO2020014859A1 (zh) 反熔丝、反熔丝的制造方法以及存储装置
US20220246225A1 (en) One-time programmable memory bit cell
KR900017187A (ko) 반도체 기억장치
KR940027178A (ko) 반도체 기억장치 및 그 제조방법
JPH1056086A (ja) Ｎａｎｄセルアレイ及びその形成方法
WO2022187780A1 (en) Thin film transistor random access memory
JPS5947464B2 (ja) 半導体装置
US6842361B2 (en) Memory cell, memory circuit block, data writing method and data reading method
JPH10173157A (ja) 半導体装置
WO2022187779A1 (en) Thin film transistor random access memory
KR100258345B1 (ko) 파워라인의 배치구조를 개선한 반도체 메모리 장치
US6355982B2 (en) Semiconductor memory device having pairs of bit lines arranged on both sides of memory cells
JPH0691223B2 (ja) Ｒｏｍ装置及びその形成方法
US6937508B1 (en) Non-volatile, high-density integrated circuit memory
JPH03166762A (ja) 半導体メモリ
US6067250A (en) Method and apparatus for localizing point defects causing leakage currents in a non-volatile memory device
US5101380A (en) Semiconductor memory device
KR980006297A (ko) 다중 레벨 도전체 워드라인 스트래핑 방법
KR910001186B1 (ko) 고집적도 및 고속의 반도체메모리장치
JP2563803B2 (ja) 半導体記憶装置