DE2533352A1 - Verfahren zur herstellung von ferroelektrischem kristallinen material - Google Patents
Verfahren zur herstellung von ferroelektrischem kristallinen materialInfo
- Publication number
- DE2533352A1 DE2533352A1 DE19752533352 DE2533352A DE2533352A1 DE 2533352 A1 DE2533352 A1 DE 2533352A1 DE 19752533352 DE19752533352 DE 19752533352 DE 2533352 A DE2533352 A DE 2533352A DE 2533352 A1 DE2533352 A1 DE 2533352A1
- Authority
- DE
- Germany
- Prior art keywords
- ferroelectric
- mass
- temperature
- composition
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002178 crystalline material Substances 0.000 title description 9
- 239000000203 mixture Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 230000009477 glass transition Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 description 27
- XKENYNILAAWPFQ-UHFFFAOYSA-N dioxido(oxo)germane;lead(2+) Chemical compound [Pb+2].[O-][Ge]([O-])=O XKENYNILAAWPFQ-UHFFFAOYSA-N 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 229910005793 GeO 2 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- GZXOHHPYODFEGO-UHFFFAOYSA-N triglycine sulfate Chemical compound NCC(O)=O.NCC(O)=O.NCC(O)=O.OS(O)(=O)=O GZXOHHPYODFEGO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0072—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition having a ferro-electric crystal phase
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/34—Silicates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geochemistry & Mineralogy (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
- Glass Compositions (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/498,695 US4027074A (en) | 1974-08-19 | 1974-08-19 | Process for producing ferroelectric crystalline material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2533352A1 true DE2533352A1 (de) | 1976-03-04 |
Family
ID=23982112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752533352 Pending DE2533352A1 (de) | 1974-08-19 | 1975-07-25 | Verfahren zur herstellung von ferroelektrischem kristallinen material |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4027074A (https=) |
| JP (1) | JPS5142100A (https=) |
| DE (1) | DE2533352A1 (https=) |
| FR (1) | FR2282292A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4243697A (en) * | 1979-03-14 | 1981-01-06 | The United States Of America As Represented By The Secretary Of The Air Force | Self biased ferrite resonators |
| US4392180A (en) * | 1980-07-16 | 1983-07-05 | E. I. Du Pont De Nemours And Company | Screen-printable dielectric composition |
| US4377840A (en) * | 1981-07-16 | 1983-03-22 | E. I. Du Pont De Nemours And Company | Screen-printable dielectric composition |
| JPS5912844Y2 (ja) * | 1982-07-22 | 1984-04-17 | シャープ株式会社 | Ｆｓ信号復調装置 |
| US4944891A (en) * | 1985-06-07 | 1990-07-31 | Hoechst Celanese Corp. | Easily poled 0-3 piezoelectric composites for transducer applications |
| US6410343B1 (en) * | 1999-04-28 | 2002-06-25 | Sharp Laboratories Of America, Inc. | C-axis oriented lead germanate film and deposition method |
| US6586260B2 (en) * | 2001-03-28 | 2003-07-01 | Sharp Laboratories Of America, Inc. | Single c-axis PGO thin film electrodes having good surface smoothness and uniformity and methods for making the same |
| US6660536B2 (en) * | 2002-02-21 | 2003-12-09 | Symetrix Corporation | Method of making ferroelectric material utilizing anneal in an electrical field |
| FR2866328B1 (fr) * | 2004-02-16 | 2006-05-26 | Saint Gobain | Verre plat au plomb par flottage sur un bain de metal |
| US20050204864A1 (en) * | 2004-03-16 | 2005-09-22 | Borland William J | Thick-film dielectric and conductive compositions |
| US10784362B2 (en) * | 2017-10-30 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
| DE102018105953B4 (de) | 2017-10-30 | 2023-09-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleiter-bauelement und verfahren zu dessen herstellung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3193503A (en) * | 1962-12-31 | 1965-07-06 | Owens Illinois Glass Co | Magnetic ceramic ferrites and method for making same |
| US3243335A (en) * | 1963-03-13 | 1966-03-29 | Samuel P Faile | Ceramic product and process of producing it |
| US3694360A (en) * | 1971-08-12 | 1972-09-26 | Owens Illinois Inc | Ferrimagnetic glass-ceramics |
-
1974
- 1974-08-19 US US05/498,695 patent/US4027074A/en not_active Expired - Lifetime
-
1975
- 1975-07-25 DE DE19752533352 patent/DE2533352A1/de active Pending
- 1975-08-07 JP JP50096283A patent/JPS5142100A/ja active Pending
- 1975-08-18 FR FR7525531A patent/FR2282292A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5142100A (https=) | 1976-04-09 |
| US4027074A (en) | 1977-05-31 |
| FR2282292A1 (fr) | 1976-03-19 |
| FR2282292B3 (https=) | 1978-04-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |