DE2518479A1 - Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist - Google Patents
Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig istInfo
- Publication number
- DE2518479A1 DE2518479A1 DE19752518479 DE2518479A DE2518479A1 DE 2518479 A1 DE2518479 A1 DE 2518479A1 DE 19752518479 DE19752518479 DE 19752518479 DE 2518479 A DE2518479 A DE 2518479A DE 2518479 A1 DE2518479 A1 DE 2518479A1
- Authority
- DE
- Germany
- Prior art keywords
- water
- protective layer
- developer
- parts
- methyl isobutyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000011241 protective layer Substances 0.000 claims description 25
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 16
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 claims description 15
- 239000010410 layer Substances 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 230000001681 protective effect Effects 0.000 claims description 7
- 229920000058 polyacrylate Polymers 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 150000002576 ketones Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920002319 Poly(methyl acrylate) Polymers 0.000 claims 1
- 239000002274 desiccant Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920006237 degradable polymer Polymers 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/473,603 US4078098A (en) | 1974-05-28 | 1974-05-28 | High energy radiation exposed positive resist mask process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2518479A1 true DE2518479A1 (de) | 1975-12-11 |
Family
ID=23880244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752518479 Pending DE2518479A1 (de) | 1974-05-28 | 1975-04-25 | Verfahren zur herstellung einer positiven resistmaske, die gegenueber einer strahlung hoher energie bestaendig ist |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4078098A (enExample) |
| JP (1) | JPS512430A (enExample) |
| DE (1) | DE2518479A1 (enExample) |
| FR (1) | FR2273303B1 (enExample) |
| GB (1) | GB1459170A (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5381116A (en) * | 1976-12-25 | 1978-07-18 | Agency Of Ind Science & Technol | Radiation sensitive polymer and its working method |
| JPS53123929A (en) * | 1977-04-05 | 1978-10-28 | Tokyo Ouka Kougiyou Kk | Developing liquid for use in radiant ray positive type resist |
| US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
| JPS56101148A (en) * | 1980-01-16 | 1981-08-13 | Toshiba Corp | Photoresist developing method |
| US4321317A (en) * | 1980-04-28 | 1982-03-23 | General Motors Corporation | High resolution lithography system for microelectronic fabrication |
| NL8006947A (nl) * | 1980-12-22 | 1982-07-16 | Philips Nv | Werkwijze voor de vervaardiging van een optisch uitleesbare informatiedrager. |
| CA1164261A (en) * | 1981-04-21 | 1984-03-27 | Tsukasa Tada | PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS |
| US4410611A (en) * | 1981-08-31 | 1983-10-18 | General Motors Corporation | Hard and adherent layers from organic resin coatings |
| US4604305A (en) * | 1982-09-28 | 1986-08-05 | Exxon Research And Engineering Co. | Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature |
| US4608281A (en) * | 1982-09-28 | 1986-08-26 | Exxon Research And Engineering Co. | Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature |
| JPS59181536A (ja) * | 1983-03-31 | 1984-10-16 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| US4540636A (en) * | 1983-12-27 | 1985-09-10 | General Motors Corporation | Metal bearing element with a score-resistant coating |
| JPH01177539A (ja) * | 1988-01-07 | 1989-07-13 | Matsushita Electron Corp | レジストの現像方法 |
| JPH0757867A (ja) * | 1993-07-19 | 1995-03-03 | Samsung Electron Co Ltd | 誘導加熱調理器 |
| JPH11289103A (ja) * | 1998-02-05 | 1999-10-19 | Canon Inc | 半導体装置および太陽電池モジュ―ル及びその解体方法 |
| US6436605B1 (en) | 1999-07-12 | 2002-08-20 | International Business Machines Corporation | Plasma resistant composition and use thereof |
| KR20240131472A (ko) * | 2019-04-12 | 2024-08-30 | 인프리아 코포레이션 | 유기금속 포토레지스트 현상제 조성물 및 처리 방법 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2892712A (en) * | 1954-04-23 | 1959-06-30 | Du Pont | Process for preparing relief images |
| US3535137A (en) * | 1967-01-13 | 1970-10-20 | Ibm | Method of fabricating etch resistant masks |
| US3770433A (en) * | 1972-03-22 | 1973-11-06 | Bell Telephone Labor Inc | High sensitivity negative electron resist |
| US3779806A (en) * | 1972-03-24 | 1973-12-18 | Ibm | Electron beam sensitive polymer t-butyl methacrylate resist |
-
1974
- 1974-05-28 US US05/473,603 patent/US4078098A/en not_active Expired - Lifetime
-
1975
- 1975-03-25 FR FR7510345A patent/FR2273303B1/fr not_active Expired
- 1975-04-25 DE DE19752518479 patent/DE2518479A1/de active Pending
- 1975-04-30 GB GB1789975A patent/GB1459170A/en not_active Expired
- 1975-05-21 JP JP50059782A patent/JPS512430A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1459170A (en) | 1976-12-22 |
| FR2273303A1 (enExample) | 1975-12-26 |
| JPS512430A (en) | 1976-01-10 |
| US4078098A (en) | 1978-03-07 |
| FR2273303B1 (enExample) | 1977-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |