GB1459170A - Positive resist mask - Google Patents

Positive resist mask

Info

Publication number
GB1459170A
GB1459170A GB1789975A GB1789975A GB1459170A GB 1459170 A GB1459170 A GB 1459170A GB 1789975 A GB1789975 A GB 1789975A GB 1789975 A GB1789975 A GB 1789975A GB 1459170 A GB1459170 A GB 1459170A
Authority
GB
United Kingdom
Prior art keywords
resist mask
positive resist
electron beam
exposed portions
acrylate polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1789975A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1459170A publication Critical patent/GB1459170A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
GB1789975A 1974-05-28 1975-04-30 Positive resist mask Expired GB1459170A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/473,603 US4078098A (en) 1974-05-28 1974-05-28 High energy radiation exposed positive resist mask process

Publications (1)

Publication Number Publication Date
GB1459170A true GB1459170A (en) 1976-12-22

Family

ID=23880244

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1789975A Expired GB1459170A (en) 1974-05-28 1975-04-30 Positive resist mask

Country Status (5)

Country Link
US (1) US4078098A (enExample)
JP (1) JPS512430A (enExample)
DE (1) DE2518479A1 (enExample)
FR (1) FR2273303B1 (enExample)
GB (1) GB1459170A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381116A (en) * 1976-12-25 1978-07-18 Agency Of Ind Science & Technol Radiation sensitive polymer and its working method
JPS53123929A (en) * 1977-04-05 1978-10-28 Tokyo Ouka Kougiyou Kk Developing liquid for use in radiant ray positive type resist
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
JPS56101148A (en) * 1980-01-16 1981-08-13 Toshiba Corp Photoresist developing method
US4321317A (en) * 1980-04-28 1982-03-23 General Motors Corporation High resolution lithography system for microelectronic fabrication
NL8006947A (nl) * 1980-12-22 1982-07-16 Philips Nv Werkwijze voor de vervaardiging van een optisch uitleesbare informatiedrager.
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
US4410611A (en) * 1981-08-31 1983-10-18 General Motors Corporation Hard and adherent layers from organic resin coatings
US4604305A (en) * 1982-09-28 1986-08-05 Exxon Research And Engineering Co. Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature
US4608281A (en) * 1982-09-28 1986-08-26 Exxon Research And Engineering Co. Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature
JPS59181536A (ja) * 1983-03-31 1984-10-16 Oki Electric Ind Co Ltd レジストパタ−ンの形成方法
US4540636A (en) * 1983-12-27 1985-09-10 General Motors Corporation Metal bearing element with a score-resistant coating
JPH01177539A (ja) * 1988-01-07 1989-07-13 Matsushita Electron Corp レジストの現像方法
JPH0757867A (ja) * 1993-07-19 1995-03-03 Samsung Electron Co Ltd 誘導加熱調理器
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
KR20240131472A (ko) * 2019-04-12 2024-08-30 인프리아 코포레이션 유기금속 포토레지스트 현상제 조성물 및 처리 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892712A (en) * 1954-04-23 1959-06-30 Du Pont Process for preparing relief images
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3770433A (en) * 1972-03-22 1973-11-06 Bell Telephone Labor Inc High sensitivity negative electron resist
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist

Also Published As

Publication number Publication date
FR2273303A1 (enExample) 1975-12-26
DE2518479A1 (de) 1975-12-11
JPS512430A (en) 1976-01-10
US4078098A (en) 1978-03-07
FR2273303B1 (enExample) 1977-04-15

Similar Documents

Publication Publication Date Title
GB1459170A (en) Positive resist mask
GB1459988A (en) Resist mask
US2675313A (en) Photographic reproduction process
GB1523535A (en) Selfsupporting masks
GB1500606A (en) Electron beam positive resist
GB1515330A (en) Methacrylate polymer resists
GB1276076A (en) Etching film materials
KR940006195A (ko) 위상쉬프트층을 갖는 포토마스크의 제조방법
JPS57148740A (en) Image duplicating material
GB1501194A (en) Photoresist process
GB1256971A (enExample)
GB1297171A (enExample)
GB1293722A (en) Photoresist process
GB1474817A (en) Method of forming a patterned high energy beam resist and a resist so formed
GB1292458A (en) Methods of forming images by physical development
JPS561934A (en) Manufacture of resist image
JPS55134847A (en) Manufacture of resist image
GB793550A (en) Improvements in or relating to photolithography
GB1061728A (en) Photographic methods and materials for making relief images
JPS57202535A (en) Formation of negative resist pattern
ES440747A1 (es) Un metodo para producir un estarcido resistente al ataque quimico.
JPS53120430A (en) Developing liquid for resist sensitive to radioactive ray
GB1234993A (en) Process for forming a positive photographic silver halide image
JPS5732444A (en) Formation of resist pattern
JPS55163841A (en) Method for electron beam exposure

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee