DE2500197A1 - Verfahren zur ablagerung dotierten materials, insbesondere zur herstellung von halbleiteranordnungen - Google Patents
Verfahren zur ablagerung dotierten materials, insbesondere zur herstellung von halbleiteranordnungenInfo
- Publication number
- DE2500197A1 DE2500197A1 DE19752500197 DE2500197A DE2500197A1 DE 2500197 A1 DE2500197 A1 DE 2500197A1 DE 19752500197 DE19752500197 DE 19752500197 DE 2500197 A DE2500197 A DE 2500197A DE 2500197 A1 DE2500197 A1 DE 2500197A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- doping
- reactive
- substrate
- doping impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 34
- 239000000463 material Substances 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000151 deposition Methods 0.000 title description 18
- 239000007789 gas Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- -1 gallium Chemical compound 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 101100508071 Solanum lycopersicum PIIF gene Proteins 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101000611918 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Phosphatidylinositol transfer protein PDR16 Proteins 0.000 description 1
- 101000611917 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Phosphatidylinositol transfer protein PDR17 Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7400838A FR2320774A1 (fr) | 1974-01-10 | 1974-01-10 | Procede et dispositif de depot de materiau dope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2500197A1 true DE2500197A1 (de) | 1975-07-17 |
Family
ID=9133333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752500197 Pending DE2500197A1 (de) | 1974-01-10 | 1975-01-03 | Verfahren zur ablagerung dotierten materials, insbesondere zur herstellung von halbleiteranordnungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3979235A (enExample) |
| JP (1) | JPS5419140B2 (enExample) |
| DE (1) | DE2500197A1 (enExample) |
| FR (1) | FR2320774A1 (enExample) |
| GB (1) | GB1481477A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4193835A (en) * | 1976-10-13 | 1980-03-18 | Matsushita Electric Industrial Co., Ltd. | Method for growing semiconductor crystal |
| EP0322050A3 (en) * | 1987-12-22 | 1990-05-16 | Philips Electronics Uk Limited | Electronic device manufacture with deposition of material, particularly cadmium mercury telluride |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5296865A (en) * | 1976-02-04 | 1977-08-15 | Nec Corp | Crystal grown unit for chemical compound semiconductor |
| US4279670A (en) * | 1979-08-06 | 1981-07-21 | Raytheon Company | Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material |
| JPS5864024A (ja) * | 1981-10-14 | 1983-04-16 | Nec Corp | 半導体気相成長方法 |
| US4716130A (en) * | 1984-04-26 | 1987-12-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | MOCVD of semi-insulating indium phosphide based compositions |
| JP2587623B2 (ja) * | 1986-11-22 | 1997-03-05 | 新技術事業団 | 化合物半導体のエピタキシヤル結晶成長方法 |
| US4774554A (en) * | 1986-12-16 | 1988-09-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semiconductor devices employing Ti-doped Group III-V epitaxial layer |
| US4830982A (en) * | 1986-12-16 | 1989-05-16 | American Telephone And Telegraph Company | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
| US4782034A (en) * | 1987-06-04 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semi-insulating group III-V based compositions doped using bis arene titanium sources |
| US5183779A (en) * | 1991-05-03 | 1993-02-02 | The United States Of America As Represented By The Secretary Of The Navy | Method for doping GaAs with high vapor pressure elements |
| KR100750420B1 (ko) | 1999-08-17 | 2007-08-21 | 동경 엘렉트론 주식회사 | 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터 |
| JP5943345B2 (ja) * | 2012-07-27 | 2016-07-05 | 東京エレクトロン株式会社 | ＺｎＯ膜の製造装置及び製造方法 |
| JP5935908B2 (ja) * | 2013-01-24 | 2016-06-15 | 株式会社島津製作所 | 試料加熱装置及び元素分析計 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3065062A (en) * | 1958-06-03 | 1962-11-20 | Wacker Chemie Gmbh | Process for purifying and recrystallizing metals, non-metals, their compounds or alloys |
| US3492175A (en) * | 1965-12-17 | 1970-01-27 | Texas Instruments Inc | Method of doping semiconductor material |
| US3421952A (en) * | 1966-02-02 | 1969-01-14 | Texas Instruments Inc | Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source |
| US3701682A (en) * | 1970-07-02 | 1972-10-31 | Texas Instruments Inc | Thin film deposition system |
| FR2133498B1 (enExample) * | 1971-04-15 | 1977-06-03 | Labo Electronique Physique | |
| US3764414A (en) * | 1972-05-01 | 1973-10-09 | Ibm | Open tube diffusion in iii-v compunds |
| JPS5098794A (enExample) * | 1973-12-27 | 1975-08-06 |
-
1974
- 1974-01-10 FR FR7400838A patent/FR2320774A1/fr active Granted
-
1975
- 1975-01-03 DE DE19752500197 patent/DE2500197A1/de active Pending
- 1975-01-06 US US05/538,717 patent/US3979235A/en not_active Expired - Lifetime
- 1975-01-07 JP JP431675A patent/JPS5419140B2/ja not_active Expired
- 1975-01-07 GB GB616/75A patent/GB1481477A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4193835A (en) * | 1976-10-13 | 1980-03-18 | Matsushita Electric Industrial Co., Ltd. | Method for growing semiconductor crystal |
| EP0322050A3 (en) * | 1987-12-22 | 1990-05-16 | Philips Electronics Uk Limited | Electronic device manufacture with deposition of material, particularly cadmium mercury telluride |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2320774A1 (fr) | 1977-03-11 |
| US3979235A (en) | 1976-09-07 |
| JPS50108877A (enExample) | 1975-08-27 |
| FR2320774B1 (enExample) | 1978-03-24 |
| JPS5419140B2 (enExample) | 1979-07-12 |
| GB1481477A (en) | 1977-07-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |