GB1481477A - Depositing doped material on a substrate - Google Patents

Depositing doped material on a substrate

Info

Publication number
GB1481477A
GB1481477A GB616/75A GB61675A GB1481477A GB 1481477 A GB1481477 A GB 1481477A GB 616/75 A GB616/75 A GB 616/75A GB 61675 A GB61675 A GB 61675A GB 1481477 A GB1481477 A GB 1481477A
Authority
GB
United Kingdom
Prior art keywords
reactive
substrate
gas
tube
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB616/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1481477A publication Critical patent/GB1481477A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
GB616/75A 1974-01-10 1975-01-07 Depositing doped material on a substrate Expired GB1481477A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400838A FR2320774A1 (fr) 1974-01-10 1974-01-10 Procede et dispositif de depot de materiau dope

Publications (1)

Publication Number Publication Date
GB1481477A true GB1481477A (en) 1977-07-27

Family

ID=9133333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB616/75A Expired GB1481477A (en) 1974-01-10 1975-01-07 Depositing doped material on a substrate

Country Status (5)

Country Link
US (1) US3979235A (enExample)
JP (1) JPS5419140B2 (enExample)
DE (1) DE2500197A1 (enExample)
FR (1) FR2320774A1 (enExample)
GB (1) GB1481477A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213837A (en) * 1987-12-22 1989-08-23 Philips Electronic Associated Electronic device manufacture with deposition of material, particularly cadmium mercury telluride

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
JPS5864024A (ja) * 1981-10-14 1983-04-16 Nec Corp 半導体気相成長方法
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US5183779A (en) * 1991-05-03 1993-02-02 The United States Of America As Represented By The Secretary Of The Navy Method for doping GaAs with high vapor pressure elements
KR100750420B1 (ko) 1999-08-17 2007-08-21 동경 엘렉트론 주식회사 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터
JP5943345B2 (ja) * 2012-07-27 2016-07-05 東京エレクトロン株式会社 ＺｎＯ膜の製造装置及び製造方法
WO2014115364A1 (ja) * 2013-01-24 2014-07-31 株式会社島津製作所 試料加熱装置及び元素分析計

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3065062A (en) * 1958-06-03 1962-11-20 Wacker Chemie Gmbh Process for purifying and recrystallizing metals, non-metals, their compounds or alloys
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3701682A (en) * 1970-07-02 1972-10-31 Texas Instruments Inc Thin film deposition system
FR2133498B1 (enExample) * 1971-04-15 1977-06-03 Labo Electronique Physique
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds
JPS5098794A (enExample) * 1973-12-27 1975-08-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2213837A (en) * 1987-12-22 1989-08-23 Philips Electronic Associated Electronic device manufacture with deposition of material, particularly cadmium mercury telluride
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material

Also Published As

Publication number Publication date
JPS5419140B2 (enExample) 1979-07-12
FR2320774B1 (enExample) 1978-03-24
DE2500197A1 (de) 1975-07-17
JPS50108877A (enExample) 1975-08-27
FR2320774A1 (fr) 1977-03-11
US3979235A (en) 1976-09-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee