FR2320774A1 - Procede et dispositif de depot de materiau dope - Google Patents

Procede et dispositif de depot de materiau dope

Info

Publication number
FR2320774A1
FR2320774A1 FR7400838A FR7400838A FR2320774A1 FR 2320774 A1 FR2320774 A1 FR 2320774A1 FR 7400838 A FR7400838 A FR 7400838A FR 7400838 A FR7400838 A FR 7400838A FR 2320774 A1 FR2320774 A1 FR 2320774A1
Authority
FR
France
Prior art keywords
deposit
dope material
dope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7400838A
Other languages
English (en)
French (fr)
Other versions
FR2320774B1 (enExample
Inventor
Andre Boucher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7400838A priority Critical patent/FR2320774A1/fr
Priority to DE19752500197 priority patent/DE2500197A1/de
Priority to US05/538,717 priority patent/US3979235A/en
Priority to JP431675A priority patent/JPS5419140B2/ja
Priority to GB616/75A priority patent/GB1481477A/en
Publication of FR2320774A1 publication Critical patent/FR2320774A1/fr
Application granted granted Critical
Publication of FR2320774B1 publication Critical patent/FR2320774B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/04—Dopants, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7400838A 1974-01-10 1974-01-10 Procede et dispositif de depot de materiau dope Granted FR2320774A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7400838A FR2320774A1 (fr) 1974-01-10 1974-01-10 Procede et dispositif de depot de materiau dope
DE19752500197 DE2500197A1 (de) 1974-01-10 1975-01-03 Verfahren zur ablagerung dotierten materials, insbesondere zur herstellung von halbleiteranordnungen
US05/538,717 US3979235A (en) 1974-01-10 1975-01-06 Depositing doped material on a substrate
JP431675A JPS5419140B2 (enExample) 1974-01-10 1975-01-07
GB616/75A GB1481477A (en) 1974-01-10 1975-01-07 Depositing doped material on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400838A FR2320774A1 (fr) 1974-01-10 1974-01-10 Procede et dispositif de depot de materiau dope

Publications (2)

Publication Number Publication Date
FR2320774A1 true FR2320774A1 (fr) 1977-03-11
FR2320774B1 FR2320774B1 (enExample) 1978-03-24

Family

ID=9133333

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7400838A Granted FR2320774A1 (fr) 1974-01-10 1974-01-10 Procede et dispositif de depot de materiau dope

Country Status (5)

Country Link
US (1) US3979235A (enExample)
JP (1) JPS5419140B2 (enExample)
DE (1) DE2500197A1 (enExample)
FR (1) FR2320774A1 (enExample)
GB (1) GB1481477A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5296865A (en) * 1976-02-04 1977-08-15 Nec Corp Crystal grown unit for chemical compound semiconductor
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
US4279670A (en) * 1979-08-06 1981-07-21 Raytheon Company Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material
JPS5864024A (ja) * 1981-10-14 1983-04-16 Nec Corp 半導体気相成長方法
US4716130A (en) * 1984-04-26 1987-12-29 American Telephone And Telegraph Company, At&T Bell Laboratories MOCVD of semi-insulating indium phosphide based compositions
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US4774554A (en) * 1986-12-16 1988-09-27 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices employing Ti-doped Group III-V epitaxial layer
US4782034A (en) * 1987-06-04 1988-11-01 American Telephone And Telegraph Company, At&T Bell Laboratories Semi-insulating group III-V based compositions doped using bis arene titanium sources
US4830982A (en) * 1986-12-16 1989-05-16 American Telephone And Telegraph Company Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
GB2213837B (en) * 1987-12-22 1992-03-11 Philips Electronic Associated Electronic device manufacture with deposition of material
US5183779A (en) * 1991-05-03 1993-02-02 The United States Of America As Represented By The Secretary Of The Navy Method for doping GaAs with high vapor pressure elements
KR100750420B1 (ko) 1999-08-17 2007-08-21 동경 엘렉트론 주식회사 플라즈마 보조 처리 실행 방법 및 플라즈마 보조 처리실행 리액터
JP5943345B2 (ja) * 2012-07-27 2016-07-05 東京エレクトロン株式会社 ＺｎＯ膜の製造装置及び製造方法
JP5935908B2 (ja) * 2013-01-24 2016-06-15 株式会社島津製作所 試料加熱装置及び元素分析計

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2133498A1 (enExample) * 1971-04-15 1972-12-01 Labo Electronique Physique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3065062A (en) * 1958-06-03 1962-11-20 Wacker Chemie Gmbh Process for purifying and recrystallizing metals, non-metals, their compounds or alloys
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US3701682A (en) * 1970-07-02 1972-10-31 Texas Instruments Inc Thin film deposition system
US3764414A (en) * 1972-05-01 1973-10-09 Ibm Open tube diffusion in iii-v compunds
JPS5098794A (enExample) * 1973-12-27 1975-08-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2133498A1 (enExample) * 1971-04-15 1972-12-01 Labo Electronique Physique

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ARTICLE DE R. KONTRIMAS ET AL: "CONTROLLED VAPOR GROWTH OF GALLIUM ARSENIDE ON GERANIUM") *
REVUE US "ELECTROCHEMICAL TECHNOLOGY", JANVIER-FEVRIER 1968, PAGES 78-83 *

Also Published As

Publication number Publication date
JPS50108877A (enExample) 1975-08-27
GB1481477A (en) 1977-07-27
DE2500197A1 (de) 1975-07-17
US3979235A (en) 1976-09-07
FR2320774B1 (enExample) 1978-03-24
JPS5419140B2 (enExample) 1979-07-12

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Legal Events

Date Code Title Description
ST Notification of lapse