DE69502364T2 - Verfahren und Vorrichtung zur Epitaxialzüchtung aus der Flüssigphase - Google Patents

Verfahren und Vorrichtung zur Epitaxialzüchtung aus der Flüssigphase

Info

Publication number
DE69502364T2
DE69502364T2 DE69502364T DE69502364T DE69502364T2 DE 69502364 T2 DE69502364 T2 DE 69502364T2 DE 69502364 T DE69502364 T DE 69502364T DE 69502364 T DE69502364 T DE 69502364T DE 69502364 T2 DE69502364 T2 DE 69502364T2
Authority
DE
Germany
Prior art keywords
liquid phase
epitaxial growth
epitaxial
growth
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69502364T
Other languages
English (en)
Other versions
DE69502364D1 (de
Inventor
Munehisa Yanagisawa
Yuji Yoshida
Susumu Higuchi
Masahiko Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69502364D1 publication Critical patent/DE69502364D1/de
Application granted granted Critical
Publication of DE69502364T2 publication Critical patent/DE69502364T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/064—Rotating sliding boat system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69502364T 1994-08-30 1995-08-25 Verfahren und Vorrichtung zur Epitaxialzüchtung aus der Flüssigphase Expired - Fee Related DE69502364T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6205300A JP2885268B2 (ja) 1994-08-30 1994-08-30 液相成長方法及び装置

Publications (2)

Publication Number Publication Date
DE69502364D1 DE69502364D1 (de) 1998-06-10
DE69502364T2 true DE69502364T2 (de) 1998-10-01

Family

ID=16504683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69502364T Expired - Fee Related DE69502364T2 (de) 1994-08-30 1995-08-25 Verfahren und Vorrichtung zur Epitaxialzüchtung aus der Flüssigphase

Country Status (6)

Country Link
US (2) US5603761A (de)
EP (1) EP0699783B1 (de)
JP (1) JP2885268B2 (de)
KR (1) KR0167411B1 (de)
DE (1) DE69502364T2 (de)
TW (1) TW285761B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10241703A1 (de) * 2002-09-09 2004-03-18 Vishay Semiconductor Gmbh Reaktor und Verfahren zur Flüssigphasenepitaxie
JP2012248803A (ja) * 2011-05-31 2012-12-13 Hitachi Cable Ltd 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶
CN116770421B (zh) * 2023-07-03 2023-12-01 北京智创芯源科技有限公司 一种水平液相外延生长石墨舟

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE261004C (de) *
FR518332A (fr) * 1916-08-23 1921-05-23 Carl Mortensen Appareil réfrigérant avec alimentation en fluide réfrigérant automatiquement réglée
CH505648A (fr) * 1968-11-04 1971-04-15 Hewlett Packard Co Appareil pour la fabrication d'une matière semi-conductrice
GB1414060A (en) * 1972-07-28 1975-11-12 Matsushita Electronics Corp Semoconductor devices
CH541353A (de) * 1972-11-20 1973-09-15 Ibm Vorrichtung zum epitaktischen Abscheiden von Halbleitermaterial durch Flüssigphasenepitaxie aus mindestens zwei Lösungen
FR2262273A1 (en) * 1974-02-27 1975-09-19 Bertin & Cie Indirect exchange cooling tower - has steam condensing tubes in parallel rows with gaps between them
JPS50119566A (de) * 1974-03-01 1975-09-19
JPS51111476A (en) * 1975-03-26 1976-10-01 Sumitomo Electric Ind Ltd Method of liquid phase epitaxial crystal growth
DE2558041C3 (de) * 1975-12-22 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Transport von Halbleiterscheiben durch ein Temperaturbehandlungsrohr
US4681773A (en) * 1981-03-27 1987-07-21 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus for simultaneous molecular beam deposition on a plurality of substrates
JPH04367587A (ja) * 1991-06-14 1992-12-18 Shin Etsu Handotai Co Ltd 液相成長方法及び装置

Also Published As

Publication number Publication date
TW285761B (de) 1996-09-11
DE69502364D1 (de) 1998-06-10
EP0699783B1 (de) 1998-05-06
KR960007833A (ko) 1996-03-22
JPH0867595A (ja) 1996-03-12
JP2885268B2 (ja) 1999-04-19
EP0699783A2 (de) 1996-03-06
US5603761A (en) 1997-02-18
KR0167411B1 (ko) 1999-01-15
EP0699783A3 (de) 1996-04-17
US5759267A (en) 1998-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee