DE3780664T2 - Epitaxiewachstumsverfahren und vorrichtung. - Google Patents
Epitaxiewachstumsverfahren und vorrichtung.Info
- Publication number
- DE3780664T2 DE3780664T2 DE8787102014T DE3780664T DE3780664T2 DE 3780664 T2 DE3780664 T2 DE 3780664T2 DE 8787102014 T DE8787102014 T DE 8787102014T DE 3780664 T DE3780664 T DE 3780664T DE 3780664 T2 DE3780664 T2 DE 3780664T2
- Authority
- DE
- Germany
- Prior art keywords
- growth method
- epitaxic
- epitaxic growth
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/933—Germanium or silicon or Ge-Si on III-V
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61028974A JPH0691020B2 (ja) | 1986-02-14 | 1986-02-14 | 気相成長方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3780664D1 DE3780664D1 (de) | 1992-09-03 |
DE3780664T2 true DE3780664T2 (de) | 1993-03-18 |
Family
ID=12263390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787102014T Expired - Lifetime DE3780664T2 (de) | 1986-02-14 | 1987-02-13 | Epitaxiewachstumsverfahren und vorrichtung. |
Country Status (4)
Country | Link |
---|---|
US (2) | US4848273A (de) |
EP (1) | EP0238830B1 (de) |
JP (1) | JPH0691020B2 (de) |
DE (1) | DE3780664T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4999315A (en) * | 1984-06-15 | 1991-03-12 | At&T Bell Laboratories | Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers |
US5348911A (en) * | 1987-06-30 | 1994-09-20 | Aixtron Gmbh | Material-saving process for fabricating mixed crystals |
EP0297867B1 (de) * | 1987-07-01 | 1993-10-06 | Nec Corporation | Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat |
US5145807A (en) * | 1988-05-11 | 1992-09-08 | Mitsubishi Kasei Corporation | Method of making semiconductor laser devices |
FR2632452B1 (fr) * | 1988-06-03 | 1990-08-17 | Labo Electronique Physique | Procede de realisation de couches epitaxiales |
US4985281A (en) * | 1988-08-22 | 1991-01-15 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4888303A (en) * | 1988-11-09 | 1989-12-19 | The United States Of America As Represented By The Secretary Of The Air Force | Vapor phase epitaxy-hydride technique with a constant alloy source for the preparation of InGaAs layers |
US5256594A (en) * | 1989-06-16 | 1993-10-26 | Intel Corporation | Masking technique for depositing gallium arsenide on silicon |
US5015323A (en) * | 1989-10-10 | 1991-05-14 | The United States Of America As Represented By The Secretary Of Commerce | Multi-tipped field-emission tool for nanostructure fabrication |
JPH0818902B2 (ja) * | 1989-11-02 | 1996-02-28 | シャープ株式会社 | 気相成長装置 |
JP3131005B2 (ja) * | 1992-03-06 | 2001-01-31 | パイオニア株式会社 | 化合物半導体気相成長装置 |
JPH05291153A (ja) * | 1992-04-15 | 1993-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
US5254210A (en) * | 1992-04-27 | 1993-10-19 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for growing semiconductor heterostructures |
US5529634A (en) * | 1992-12-28 | 1996-06-25 | Kabushiki Kaisha Toshiba | Apparatus and method of manufacturing semiconductor device |
JP2605604B2 (ja) * | 1993-11-24 | 1997-04-30 | 日本電気株式会社 | 半導体結晶のエピタキシャル成長方法とそれに用いる分子線供給装置 |
TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
US6010937A (en) * | 1995-09-05 | 2000-01-04 | Spire Corporation | Reduction of dislocations in a heteroepitaxial semiconductor structure |
US5834379A (en) * | 1996-07-16 | 1998-11-10 | Cornell Research Foundation, Inc. | Process for synthesis of cubic GaN on GaAs using NH3 in an RF plasma process |
US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
JPH1154442A (ja) * | 1997-08-07 | 1999-02-26 | Shin Etsu Handotai Co Ltd | 化合物半導体エピタキシャルウェーハの製造方法およびこれに用いる気相成長装置 |
US6337102B1 (en) * | 1997-11-17 | 2002-01-08 | The Trustees Of Princeton University | Low pressure vapor phase deposition of organic thin films |
US6358323B1 (en) * | 1998-07-21 | 2002-03-19 | Applied Materials, Inc. | Method and apparatus for improved control of process and purge material in a substrate processing system |
ATE259432T1 (de) * | 1999-05-13 | 2004-02-15 | Emf Ireland Ltd | Verfahren und vorrichtung zum epitaktischem wachsen eines materials auf einem substrat |
DE10057134A1 (de) * | 2000-11-17 | 2002-05-23 | Aixtron Ag | Verfahren zum Abscheiden von insbesondere kristallinen Schichten sowie Vorrichtung zur Durchführung des Verfahrens |
TW544775B (en) * | 2001-02-28 | 2003-08-01 | Japan Pionics | Chemical vapor deposition apparatus and chemical vapor deposition method |
KR20020088091A (ko) * | 2001-05-17 | 2002-11-27 | (주)한백 | 화합물 반도체 제조용 수평 반응로 |
KR101040446B1 (ko) * | 2002-04-19 | 2011-06-09 | 맷슨 테크놀로지, 인크. | 저증기압 가스 전구체를 이용하여 기판 상에 막을증착하기 위한 시스템 |
JP4292777B2 (ja) * | 2002-06-17 | 2009-07-08 | ソニー株式会社 | 薄膜形成装置 |
TW589396B (en) * | 2003-01-07 | 2004-06-01 | Arima Optoelectronics Corp | Chemical vapor deposition reactor |
EP1739213B1 (de) * | 2005-07-01 | 2011-04-13 | Freiberger Compound Materials GmbH | Vorrichtung und Verfahren zum Tempern von III-V-Wafern sowie getemperte III-V-Halbleitereinkristallwafer |
JP5060324B2 (ja) * | 2008-01-31 | 2012-10-31 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び処理容器 |
JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
US11384448B1 (en) * | 2018-06-06 | 2022-07-12 | United States Of America As Represented By The Secretary Of The Air Force | Optimized Heteroepitaxial growth of semiconductors |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312570A (en) * | 1961-05-29 | 1967-04-04 | Monsanto Co | Production of epitaxial films of semiconductor compound material |
US3312571A (en) * | 1961-10-09 | 1967-04-04 | Monsanto Co | Production of epitaxial films |
US3594242A (en) * | 1966-01-03 | 1971-07-20 | Monsanto Co | Method for production of epitaxial films |
FR2225207B1 (de) * | 1973-04-16 | 1978-04-21 | Ibm | |
US4180825A (en) * | 1977-09-16 | 1979-12-25 | Harris Corporation | Heteroepitaxial deposition of GaP on silicon substrates |
US4204893A (en) * | 1979-02-16 | 1980-05-27 | Bell Telephone Laboratories, Incorporated | Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source |
GB2055774B (en) * | 1979-04-09 | 1983-02-02 | Plessey Co Ltd | Methods of producing semiconductor materials |
US4253887A (en) * | 1979-08-27 | 1981-03-03 | Rca Corporation | Method of depositing layers of semi-insulating gallium arsenide |
JPS57991A (en) * | 1980-06-02 | 1982-01-06 | Mitsubishi Heavy Ind Ltd | Oscillation reducing apparatus for workboat or the like |
US4407694A (en) * | 1981-06-22 | 1983-10-04 | Hughes Aircraft Company | Multi-range doping of epitaxial III-V layers from a single source |
JPS5973496A (ja) * | 1982-10-19 | 1984-04-25 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
US4488914A (en) * | 1982-10-29 | 1984-12-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch |
JPS6012724A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 化合物半導体の成長方法 |
JPH0763053B2 (ja) * | 1983-07-28 | 1995-07-05 | 日本電気株式会社 | InP上へInGaAsPを結晶成長する方法 |
US4504329A (en) * | 1983-10-06 | 1985-03-12 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source |
EP0172876B1 (de) * | 1984-02-17 | 1988-10-26 | AT&T Corp. | Abscheidungstechnik |
US4645689A (en) * | 1984-02-17 | 1987-02-24 | At&T Bell Laboratories | Deposition technique |
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
US4579609A (en) * | 1984-06-08 | 1986-04-01 | Massachusetts Institute Of Technology | Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition |
GB8421162D0 (en) * | 1984-08-21 | 1984-09-26 | British Telecomm | Growth of semi-conductors |
GB8428032D0 (en) * | 1984-11-06 | 1984-12-12 | Secr Defence | Growth of crystalline layers |
US4736705A (en) * | 1986-07-14 | 1988-04-12 | The United States Of America As Represented By The Secretary Of The Air Force | Apparatus for metal organic chemical vapor deposition |
JPH0650169A (ja) * | 1992-07-31 | 1994-02-22 | Koyo Seiko Co Ltd | エンジン補機駆動用変速ユニット |
JPH11576A (ja) * | 1997-06-11 | 1999-01-06 | Zexel Corp | 自動車用空気清浄装置 |
-
1986
- 1986-02-14 JP JP61028974A patent/JPH0691020B2/ja not_active Expired - Fee Related
-
1987
- 1987-02-13 DE DE8787102014T patent/DE3780664T2/de not_active Expired - Lifetime
- 1987-02-13 EP EP87102014A patent/EP0238830B1/de not_active Expired - Lifetime
- 1987-09-01 US US07/091,786 patent/US4848273A/en not_active Expired - Lifetime
-
1988
- 1988-08-30 US US07/239,045 patent/US4808551A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4808551A (en) | 1989-02-28 |
EP0238830B1 (de) | 1992-07-29 |
JPH0691020B2 (ja) | 1994-11-14 |
JPS62188309A (ja) | 1987-08-17 |
DE3780664D1 (de) | 1992-09-03 |
EP0238830A1 (de) | 1987-09-30 |
US4848273A (en) | 1989-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3780664D1 (de) | Epitaxiewachstumsverfahren und vorrichtung. | |
DE3782991D1 (de) | Cvd-verfahren und vorrichtung. | |
DE3781313T3 (de) | Verfahren und Vorrichtung. | |
DE3776079D1 (de) | Vakuum-beschichtungsverfahren und vorrichtung dazu. | |
DE294214T1 (de) | Coexstrusions-vorrichtung und -verfahren. | |
DE3767986D1 (de) | Fluessiges sterilisationsverfahren und vorrichtung. | |
DE3787613T2 (de) | Qualitative immunochromatographische Methode und Vorrichtung. | |
DE3767333D1 (de) | Verfahren und vorrichtung zur energiesparenden zerkleinerung. | |
DE3881473D1 (de) | Verfahren und sterilisationsvorrichtung. | |
DE3854276D1 (de) | Kathodenzerstäubungsverfahren und Vorrichtung zur Durchführung desselben. | |
DE3777602D1 (de) | Formgebungsverfahren und vorrichtung dafuer. | |
DE3486197D1 (de) | Filtrierverfahren und vorrichtung. | |
DE3679079D1 (de) | Verfahren und vorrichtung zur teigbereitung. | |
DE3580752D1 (de) | Groessenvariables intrauterinpessar und empfaengnisverhuetende vorrichtung. | |
DE3864194D1 (de) | Giessverfahren und vorrichtung dazu. | |
DE3778681D1 (de) | Destillationsverfahren und vorrichtung. | |
DE3861876D1 (de) | Vollformverfahren und -vorrichtung. | |
DE3862368D1 (de) | Fliessbettverfahren und vorrichtung dafuer. | |
DE3853296D1 (de) | Blätterverteilungsverfahren und vorrichtung. | |
DE3788589D1 (de) | Lötverfahren und Gerät. | |
DE3867409D1 (de) | Fliessbettverfahren und vorrichtung. | |
DE3668789D1 (de) | Vorrichtung und destillationsverfahren. | |
DE3771768D1 (de) | Nachweismethode und geraet. | |
DE3680253D1 (de) | Verdampfungsverfahren und vorrichtung. | |
DE3850652T2 (de) | Zellenzuchtverfahren und vorrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |