DE2436517A1 - Halbleiter-bauteil mit einem feldeffekt-transistor mit isolierter gateelektrode, sowie verfahren zur herstellung desselben - Google Patents

Halbleiter-bauteil mit einem feldeffekt-transistor mit isolierter gateelektrode, sowie verfahren zur herstellung desselben

Info

Publication number
DE2436517A1
DE2436517A1 DE2436517A DE2436517A DE2436517A1 DE 2436517 A1 DE2436517 A1 DE 2436517A1 DE 2436517 A DE2436517 A DE 2436517A DE 2436517 A DE2436517 A DE 2436517A DE 2436517 A1 DE2436517 A1 DE 2436517A1
Authority
DE
Germany
Prior art keywords
layer
conductive
silicon
conductive layer
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2436517A
Other languages
German (de)
English (en)
Inventor
Andrew Gordon Francis Dingwall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2436517A1 publication Critical patent/DE2436517A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE2436517A 1973-08-06 1974-07-29 Halbleiter-bauteil mit einem feldeffekt-transistor mit isolierter gateelektrode, sowie verfahren zur herstellung desselben Pending DE2436517A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38566973A 1973-08-06 1973-08-06

Publications (1)

Publication Number Publication Date
DE2436517A1 true DE2436517A1 (de) 1975-03-06

Family

ID=23522380

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2436517A Pending DE2436517A1 (de) 1973-08-06 1974-07-29 Halbleiter-bauteil mit einem feldeffekt-transistor mit isolierter gateelektrode, sowie verfahren zur herstellung desselben

Country Status (12)

Country Link
US (1) US4069577A (enExample)
JP (1) JPS5051276A (enExample)
BE (1) BE818547A (enExample)
BR (1) BR7406340D0 (enExample)
CA (1) CA1012658A (enExample)
DE (1) DE2436517A1 (enExample)
FR (1) FR2240532B1 (enExample)
GB (1) GB1476790A (enExample)
IN (1) IN140846B (enExample)
IT (1) IT1015392B (enExample)
NL (1) NL7410214A (enExample)
SE (1) SE7409993L (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5075775A (enExample) * 1973-11-06 1975-06-21
JPS5918872B2 (ja) * 1973-12-07 1984-05-01 日本電気株式会社 絶縁ゲ−ト型電界効果半導体装置の製法
JPS5293278A (en) * 1976-01-30 1977-08-05 Matsushita Electronics Corp Manufacture for mos type semiconductor intergrated circuit
JPS52117079A (en) * 1976-03-29 1977-10-01 Oki Electric Ind Co Ltd Preparation of semiconductor device
FR2351502A1 (fr) * 1976-05-14 1977-12-09 Ibm Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees
US4035198A (en) * 1976-06-30 1977-07-12 International Business Machines Corporation Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors
US4095251A (en) * 1976-08-19 1978-06-13 International Business Machines Corporation Field effect transistors and fabrication of integrated circuits containing the transistors
JPS54109784A (en) * 1978-02-16 1979-08-28 Nec Corp Manufacture of semiconductor device
JPS5464480A (en) * 1977-10-31 1979-05-24 Nec Corp Semiconductor device
JPS5848936A (ja) * 1981-09-10 1983-03-23 Fujitsu Ltd 半導体装置の製造方法
JPS59123266A (ja) * 1982-12-28 1984-07-17 Toshiba Corp Ｍｉｓトランジスタ及びその製造方法
US5798291A (en) * 1995-03-20 1998-08-25 Lg Semicon Co., Ltd. Method of making a semiconductor device with recessed source and drain

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3691627A (en) * 1970-02-03 1972-09-19 Gen Electric Method of fabricating buried metallic film devices
US3673471A (en) * 1970-10-08 1972-06-27 Fairchild Camera Instr Co Doped semiconductor electrodes for mos type devices
US3761327A (en) * 1971-03-19 1973-09-25 Itt Planar silicon gate mos process
NL7113561A (enExample) * 1971-10-02 1973-04-04
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure

Also Published As

Publication number Publication date
BR7406340D0 (pt) 1975-09-09
GB1476790A (en) 1977-06-16
FR2240532B1 (enExample) 1978-08-11
IT1015392B (it) 1977-05-10
SE7409993L (enExample) 1975-02-07
JPS5051276A (enExample) 1975-05-08
CA1012658A (en) 1977-06-21
FR2240532A1 (enExample) 1975-03-07
AU7206174A (en) 1976-02-12
BE818547A (fr) 1974-12-02
NL7410214A (nl) 1975-02-10
US4069577A (en) 1978-01-24
IN140846B (enExample) 1976-12-25

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