NL7410214A - Halfgeleider inrichting met een geisoleerde poort veldeffect transistor en werkwijze ter vervaardiging daarvan. - Google Patents
Halfgeleider inrichting met een geisoleerde poort veldeffect transistor en werkwijze ter vervaardiging daarvan.Info
- Publication number
- NL7410214A NL7410214A NL7410214A NL7410214A NL7410214A NL 7410214 A NL7410214 A NL 7410214A NL 7410214 A NL7410214 A NL 7410214A NL 7410214 A NL7410214 A NL 7410214A NL 7410214 A NL7410214 A NL 7410214A
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacture
- semiconductor device
- field effect
- effect transistor
- port field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38566973A | 1973-08-06 | 1973-08-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7410214A true NL7410214A (nl) | 1975-02-10 |
Family
ID=23522380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7410214A NL7410214A (nl) | 1973-08-06 | 1974-07-30 | Halfgeleider inrichting met een geisoleerde poort veldeffect transistor en werkwijze ter vervaardiging daarvan. |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4069577A (nl) |
| JP (1) | JPS5051276A (nl) |
| BE (1) | BE818547A (nl) |
| BR (1) | BR7406340D0 (nl) |
| CA (1) | CA1012658A (nl) |
| DE (1) | DE2436517A1 (nl) |
| FR (1) | FR2240532B1 (nl) |
| GB (1) | GB1476790A (nl) |
| IN (1) | IN140846B (nl) |
| IT (1) | IT1015392B (nl) |
| NL (1) | NL7410214A (nl) |
| SE (1) | SE7409993L (nl) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5075775A (nl) * | 1973-11-06 | 1975-06-21 | ||
| JPS5918872B2 (ja) * | 1973-12-07 | 1984-05-01 | 日本電気株式会社 | 絶縁ゲ−ト型電界効果半導体装置の製法 |
| JPS5293278A (en) * | 1976-01-30 | 1977-08-05 | Matsushita Electronics Corp | Manufacture for mos type semiconductor intergrated circuit |
| JPS52117079A (en) * | 1976-03-29 | 1977-10-01 | Oki Electric Ind Co Ltd | Preparation of semiconductor device |
| FR2351502A1 (fr) * | 1976-05-14 | 1977-12-09 | Ibm | Procede de fabrication de transistors a effet de champ a porte en silicium polycristallin auto-alignee avec les regions source et drain ainsi qu'avec les regions d'isolation de champ encastrees |
| US4035198A (en) * | 1976-06-30 | 1977-07-12 | International Business Machines Corporation | Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors |
| US4095251A (en) * | 1976-08-19 | 1978-06-13 | International Business Machines Corporation | Field effect transistors and fabrication of integrated circuits containing the transistors |
| JPS5464480A (en) * | 1977-10-31 | 1979-05-24 | Nec Corp | Semiconductor device |
| JPS54109784A (en) * | 1978-02-16 | 1979-08-28 | Nec Corp | Manufacture of semiconductor device |
| JPS5848936A (ja) * | 1981-09-10 | 1983-03-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS59123266A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | Ｍｉｓトランジスタ及びその製造方法 |
| US5798291A (en) * | 1995-03-20 | 1998-08-25 | Lg Semicon Co., Ltd. | Method of making a semiconductor device with recessed source and drain |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3691627A (en) * | 1970-02-03 | 1972-09-19 | Gen Electric | Method of fabricating buried metallic film devices |
| US3673471A (en) * | 1970-10-08 | 1972-06-27 | Fairchild Camera Instr Co | Doped semiconductor electrodes for mos type devices |
| US3761327A (en) * | 1971-03-19 | 1973-09-25 | Itt | Planar silicon gate mos process |
| NL7113561A (nl) * | 1971-10-02 | 1973-04-04 | ||
| CA1001771A (en) * | 1973-01-15 | 1976-12-14 | Fairchild Camera And Instrument Corporation | Method of mos transistor manufacture and resulting structure |
-
1974
- 1974-06-11 IN IN1265/CAL/1974A patent/IN140846B/en unknown
- 1974-06-25 IT IT24412/74A patent/IT1015392B/it active
- 1974-07-15 CA CA204,805A patent/CA1012658A/en not_active Expired
- 1974-07-29 DE DE2436517A patent/DE2436517A1/de active Pending
- 1974-07-29 GB GB3331574A patent/GB1476790A/en not_active Expired
- 1974-07-30 NL NL7410214A patent/NL7410214A/nl unknown
- 1974-08-02 SE SE7409993A patent/SE7409993L/xx unknown
- 1974-08-02 JP JP49089408A patent/JPS5051276A/ja active Pending
- 1974-08-02 BR BR6340/74A patent/BR7406340D0/pt unknown
- 1974-08-05 FR FR7427142A patent/FR2240532B1/fr not_active Expired
- 1974-08-06 BE BE147341A patent/BE818547A/xx unknown
-
1975
- 1975-04-22 US US05/570,433 patent/US4069577A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1476790A (en) | 1977-06-16 |
| FR2240532B1 (nl) | 1978-08-11 |
| BR7406340D0 (pt) | 1975-09-09 |
| IN140846B (nl) | 1976-12-25 |
| US4069577A (en) | 1978-01-24 |
| FR2240532A1 (nl) | 1975-03-07 |
| IT1015392B (it) | 1977-05-10 |
| SE7409993L (nl) | 1975-02-07 |
| BE818547A (fr) | 1974-12-02 |
| AU7206174A (en) | 1976-02-12 |
| DE2436517A1 (de) | 1975-03-06 |
| CA1012658A (en) | 1977-06-21 |
| JPS5051276A (nl) | 1975-05-08 |
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