DE2405935C2 - Verfahren zur Diffusion von Dotierstoffatomen eines ersten Leitungstyps in eine erste Oberfläche eines Halbleiterkörpers mit einem zweiten Leitungstyp - Google Patents

Verfahren zur Diffusion von Dotierstoffatomen eines ersten Leitungstyps in eine erste Oberfläche eines Halbleiterkörpers mit einem zweiten Leitungstyp

Info

Publication number
DE2405935C2
DE2405935C2 DE2405935A DE2405935A DE2405935C2 DE 2405935 C2 DE2405935 C2 DE 2405935C2 DE 2405935 A DE2405935 A DE 2405935A DE 2405935 A DE2405935 A DE 2405935A DE 2405935 C2 DE2405935 C2 DE 2405935C2
Authority
DE
Germany
Prior art keywords
conductivity type
semiconductor body
dopant atoms
diffusion
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2405935A
Other languages
German (de)
English (en)
Other versions
DE2405935A1 (de
Inventor
Joseph Bethesda Lindmayer, Md.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Comsat Corp
Original Assignee
Comsat Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Comsat Corp filed Critical Comsat Corp
Publication of DE2405935A1 publication Critical patent/DE2405935A1/de
Application granted granted Critical
Publication of DE2405935C2 publication Critical patent/DE2405935C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE2405935A 1973-02-13 1974-02-08 Verfahren zur Diffusion von Dotierstoffatomen eines ersten Leitungstyps in eine erste Oberfläche eines Halbleiterkörpers mit einem zweiten Leitungstyp Expired DE2405935C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US331740A US3895975A (en) 1973-02-13 1973-02-13 Method for the post-alloy diffusion of impurities into a semiconductor

Publications (2)

Publication Number Publication Date
DE2405935A1 DE2405935A1 (de) 1974-08-15
DE2405935C2 true DE2405935C2 (de) 1983-09-01

Family

ID=23295183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2405935A Expired DE2405935C2 (de) 1973-02-13 1974-02-08 Verfahren zur Diffusion von Dotierstoffatomen eines ersten Leitungstyps in eine erste Oberfläche eines Halbleiterkörpers mit einem zweiten Leitungstyp

Country Status (10)

Country Link
US (1) US3895975A (https=)
JP (1) JPS49114889A (https=)
BE (1) BE810943A (https=)
CA (1) CA1016848A (https=)
DE (1) DE2405935C2 (https=)
FR (1) FR2335040A1 (https=)
GB (1) GB1452637A (https=)
IT (1) IT1004927B (https=)
NL (1) NL7401992A (https=)
SE (1) SE391607B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821434B2 (ja) * 1974-09-24 1983-04-30 ソニー株式会社 タイヨウデンチ
US4137095A (en) * 1976-07-14 1979-01-30 Solarex Corporation Constant voltage solar cell and method of making same
US4349691A (en) * 1977-04-05 1982-09-14 Solarex Corporation Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
JPS5833693B2 (ja) * 1977-08-12 1983-07-21 株式会社日立製作所 半導体装置の製造方法
DE2754652A1 (de) * 1977-12-08 1979-06-13 Ibm Deutschland Verfahren zum herstellen von silicium-photoelementen
US4226017A (en) * 1978-05-15 1980-10-07 Solarex Corporation Method for making a semiconductor device
FR2440083A1 (fr) * 1978-10-26 1980-05-23 Commissariat Energie Atomique Procede de realisation de composants semi-conducteurs presentant des proprietes de conversion opto-electroniques
US4297391A (en) * 1979-01-16 1981-10-27 Solarex Corporation Method of applying electrical contacts to a photovoltaic cell
JPS55158679A (en) * 1979-05-29 1980-12-10 Agency Of Ind Science & Technol Manufacture of solar cell
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US7790574B2 (en) * 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
WO2015012457A1 (ko) * 2013-07-25 2015-01-29 한국생산기술연구원 복합구조의 실리콘 웨이퍼, 이의 제조방법 및 이를 이용한 태양 전지

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL212349A (https=) * 1955-04-22 1900-01-01
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
DE1249415B (https=) * 1963-03-06 1900-01-01
US3373321A (en) * 1964-02-14 1968-03-12 Westinghouse Electric Corp Double diffusion solar cell fabrication
US3513040A (en) * 1964-03-23 1970-05-19 Xerox Corp Radiation resistant solar cell
GB1233545A (https=) * 1967-08-18 1971-05-26
US3577287A (en) * 1968-02-12 1971-05-04 Gen Motors Corp Aluminum diffusion technique
DE1912666A1 (de) * 1969-03-13 1970-09-24 Siemens Ag Verfahren zur Kontaktierung eines Halbleiterkoerpers

Also Published As

Publication number Publication date
BE810943A (fr) 1974-08-13
FR2335040B1 (https=) 1978-06-23
JPS49114889A (https=) 1974-11-01
IT1004927B (it) 1976-07-20
SE391607B (sv) 1977-02-21
NL7401992A (https=) 1974-08-15
DE2405935A1 (de) 1974-08-15
US3895975A (en) 1975-07-22
AU6529774A (en) 1975-08-07
FR2335040A1 (fr) 1977-07-08
GB1452637A (en) 1976-10-13
CA1016848A (en) 1977-09-06

Similar Documents

Publication Publication Date Title
DE2405935C2 (de) Verfahren zur Diffusion von Dotierstoffatomen eines ersten Leitungstyps in eine erste Oberfläche eines Halbleiterkörpers mit einem zweiten Leitungstyp
DE2917564A1 (de) Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende
DE2707180A1 (de) Avalanche-photodiode mit verringerter lawinendurchbruchspannung
DE2165006A1 (de) Halbleiterkörper mit aktivem Bereich
DE1806624A1 (de) Lichtelektrischer Strahlungsempfaenger
DE2416147C2 (de) Heteroübergangsdiodenlaser
DE2735937C2 (de) Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen
DE2756268A1 (de) Temperaturkompensierte bezugsspannungsdiode
DE1093484B (de) Verfahren zur Herstellung von Halbleiterbauelementen, insbesondere pnp- oder npn-Leistungstransistoren
DE1113031B (de) Verfahren zur Herstellung eines Flaechentransistors
DE2448478A1 (de) Verfahren zum herstellen von pn-halbleiteruebergaengen
DE2450162A1 (de) Verfahren zur herstellung eines halbleiterlaserelements
DE3815512A1 (de) Solarzelle mit verminderter effektiver rekombinationsgeschwindigkeit der ladungstraeger
DE2702451B2 (de) Halbleiteranordnung
DE2848925A1 (de) Lawinen-photodiode mit heterouebergang
DE2031831A1 (de) Halbleiterdiode und Verfahren zu ihrer Herstellung
DE1539606A1 (de) Elektrolumineszentes Material
DE3010986A1 (de) Integrierte halbleiterschaltung
DE2639364C3 (de) Thyristor
DE2620980C2 (https=)
DE2710701A1 (de) Halbleiterbauelement
DE69001016T2 (de) Verfahren zur herstellung von wolfram-antimon ohmischen kontakten mit niedrigem widerstand auf iii-iv halbleitermaterialien.
DE2241083B2 (de) Hochleistungs-Speicherdiode und Verfahren zu ihrer Herstellung
DE1274245B (de) Halbleiter-Gleichrichterdiode fuer Starkstrom
DE2049696C3 (de) Halbleiterbauelement und Verfahren zum Herstellen

Legal Events

Date Code Title Description
8126 Change of the secondary classification
8110 Request for examination paragraph 44
8181 Inventor (new situation)

Free format text: LINDMAYER, JOSEPH, BETHESDA, MD., US

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee