DE2354854C2 - Verfahren und Vorrichtung zur Herstellung eines scheibenförmigen Halbleiterkörpers - Google Patents

Verfahren und Vorrichtung zur Herstellung eines scheibenförmigen Halbleiterkörpers

Info

Publication number
DE2354854C2
DE2354854C2 DE2354854A DE2354854A DE2354854C2 DE 2354854 C2 DE2354854 C2 DE 2354854C2 DE 2354854 A DE2354854 A DE 2354854A DE 2354854 A DE2354854 A DE 2354854A DE 2354854 C2 DE2354854 C2 DE 2354854C2
Authority
DE
Germany
Prior art keywords
semiconductor body
disk
shaped
semiconductor
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2354854A
Other languages
German (de)
English (en)
Other versions
DE2354854A1 (de
Inventor
Otto Lupfig Kuhn
Samuel Dipl.-Phys. Birr Schweitzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE2354854A1 publication Critical patent/DE2354854A1/de
Application granted granted Critical
Publication of DE2354854C2 publication Critical patent/DE2354854C2/de
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/08—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for polishing surfaces, e.g. smoothing a surface by making use of liquid-borne abrasives
    • B24C1/083—Deburring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C3/00—Abrasive blasting machines or devices; Plants
    • B24C3/32—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks
    • B24C3/322—Abrasive blasting machines or devices; Plants designed for abrasive blasting of particular work, e.g. the internal surfaces of cylinder blocks for electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Sensors (AREA)
DE2354854A 1973-10-11 1973-11-02 Verfahren und Vorrichtung zur Herstellung eines scheibenförmigen Halbleiterkörpers Expired DE2354854C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1450973A CH566643A5 (en, 2012) 1973-10-11 1973-10-11

Publications (2)

Publication Number Publication Date
DE2354854A1 DE2354854A1 (de) 1975-04-30
DE2354854C2 true DE2354854C2 (de) 1985-10-24

Family

ID=4401415

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2354854A Expired DE2354854C2 (de) 1973-10-11 1973-11-02 Verfahren und Vorrichtung zur Herstellung eines scheibenförmigen Halbleiterkörpers
DE19737339254U Expired DE7339254U (de) 1973-10-11 1973-11-02 Vorrichtung zur hohlkehlenfoermigen anschraegung der mantelflaeche eines halbleiterkoerpers

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19737339254U Expired DE7339254U (de) 1973-10-11 1973-11-02 Vorrichtung zur hohlkehlenfoermigen anschraegung der mantelflaeche eines halbleiterkoerpers

Country Status (5)

Country Link
US (1) US3953941A (en, 2012)
JP (1) JPS5611225B2 (en, 2012)
CH (1) CH566643A5 (en, 2012)
DE (2) DE2354854C2 (en, 2012)
GB (1) GB1460645A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3043490A1 (de) * 1979-11-30 1981-06-19 General Electric Co., Schenectady, N.Y. Verfahren zum metallisieren eines halbleiterelements

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031667A (en) * 1976-03-29 1977-06-28 Macronetics, Inc. Apparatus for contouring edge of semiconductor wafers
DE2656070C2 (de) * 1976-12-10 1983-12-08 Kraftwerk Union AG, 4330 Mülheim Vorrichtung zum Einarbeiten von Ringnuten um eine mit Dehnungsmeßstreifen versehene Meßstelle
DE3124947C2 (de) * 1981-06-25 1985-12-05 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und Vorrichtung zum Herstellen einer Hohlkehle in der Mantelfläche des Aktivteils eines Leistungshalbleiterbauelements
JPS61108170A (ja) * 1984-10-31 1986-05-26 ゼネラル・エレクトリツク・カンパニイ 電力半導体装置に２重正ベベル溝を形成する方法
EP0264700B1 (de) * 1986-10-22 1991-05-08 BBC Brown Boveri AG Verfahren zum Anbringen einer umlaufenden Hohlkehle am Rand einer Halbleiterscheibe eines Leistungshalbleiter-Bauelements
US5010694A (en) * 1989-08-01 1991-04-30 Advanced Technology Systems, Inc. Fluid cutting machine
JPH04277625A (ja) * 1991-03-05 1992-10-02 Murata Mfg Co Ltd チップ型電子部品の加工方法
GB2264659B (en) * 1992-02-29 1995-05-24 Rolls Royce Plc Abrasive fluid jet machining
US5704824A (en) * 1993-10-12 1998-01-06 Hashish; Mohamad Method and apparatus for abrasive water jet millins
FR2789224B1 (fr) * 1999-01-28 2003-10-03 St Microelectronics Sa Dressage de bord d'une plaquette semiconductrice
US6705925B1 (en) * 2000-10-20 2004-03-16 Lightwave Microsystems Apparatus and method to dice integrated circuits from a wafer using a pressurized jet
JP5793014B2 (ja) * 2011-07-21 2015-10-14 株式会社不二製作所 硬質脆性材料基板の側部研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2886026A (en) * 1957-08-20 1959-05-12 Texas Instruments Inc Method of and apparatus for cutting a semiconductor crystal
BE628619A (en, 2012) * 1962-02-20
US3262234A (en) * 1963-10-04 1966-07-26 Int Rectifier Corp Method of forming a semiconductor rim by sandblasting
GB1057214A (en) * 1965-05-11 1967-02-01 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3589081A (en) * 1967-08-21 1971-06-29 Pennwalt Corp Abrading method
GB1226880A (en, 2012) * 1968-03-21 1971-03-31
CH504783A (de) * 1969-06-20 1971-03-15 Siemens Ag Verfahren zum Abtrennen eines Körpers von einem scheibenförmigen Kristall und Vorrichtung zur Durchführung dieses Verfahrens
SE358838B (en, 2012) * 1971-12-01 1973-08-13 Ingenjoers Fa Hebe Ab

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3043490A1 (de) * 1979-11-30 1981-06-19 General Electric Co., Schenectady, N.Y. Verfahren zum metallisieren eines halbleiterelements

Also Published As

Publication number Publication date
JPS5611225B2 (en, 2012) 1981-03-12
CH566643A5 (en, 2012) 1975-09-15
JPS5067592A (en, 2012) 1975-06-06
DE7339254U (de) 1976-01-08
US3953941A (en) 1976-05-04
DE2354854A1 (de) 1975-04-30
GB1460645A (en) 1977-01-06

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Legal Events

Date Code Title Description
OF Willingness to grant licences before publication of examined application
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee