GB1057214A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB1057214A
GB1057214A GB1980665A GB1980665A GB1057214A GB 1057214 A GB1057214 A GB 1057214A GB 1980665 A GB1980665 A GB 1980665A GB 1980665 A GB1980665 A GB 1980665A GB 1057214 A GB1057214 A GB 1057214A
Authority
GB
United Kingdom
Prior art keywords
diffusion
region
semi
layer
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1980665A
Inventor
Leonard Thomas Alexand Beckett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1980665A priority Critical patent/GB1057214A/en
Priority to DE1966I0030760 priority patent/DE1564146A1/en
Priority to NL6606326A priority patent/NL6606326A/xx
Priority to FR61145A priority patent/FR1479716A/en
Priority to ES0326615A priority patent/ES326615A1/en
Publication of GB1057214A publication Critical patent/GB1057214A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

1,057,214. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. May 11, 1965, No. 19806/65. Heading H1K. Semi-conductor devices are made in which at a PN junction between a layer of one conductivity type and a layer of the opposite conductivity type which is of relatively high resistivity the surface of the latter layer and the emergent PN junction include an acute angle. Although applicable to diodes and transistors the invention is mainly described with respect to a silicon controlled-rectifier. (Germanium is also a suitable semi-conductor for such devices). The thyristor shown has a main body in the form of a circular disc of 20-40 ohm cm. N-type silicon. The gate region 6 and main part 3 of the anode region are formed by gallium diffusion and the enhanced conductivity part 2 of the anode region is formed by boron diffusion. Phosphorus diffusion is used to form the annular cathode region 8. Genetic silicon oxide masking is used during these diffusion stages. The three electrodes are applied by electroless nickel plating followed by plating with gold. An abrasion treatment, for example using alumina particles in a stream of compressed air, is now used to shape the surface of the high resistivity region 4 at the junctions 9 and 10, the device being rotated rapidly during the process. The abrasion nozzle may be formed as a rectangular slot having a main dimension lying in a plane parallel to the major faces of the device. The angles α and # produced are preferably about 30 degrees but they need not be made equal.
GB1980665A 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices Expired GB1057214A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB1980665A GB1057214A (en) 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices
DE1966I0030760 DE1564146A1 (en) 1965-05-11 1966-05-06 Semiconductor device and method of manufacturing
NL6606326A NL6606326A (en) 1965-05-11 1966-05-10
FR61145A FR1479716A (en) 1965-05-11 1966-05-11 Improvements to semiconductor devices, such as, for example, power thyristors
ES0326615A ES326615A1 (en) 1965-05-11 1966-05-11 A semiconductor device. (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1980665A GB1057214A (en) 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1057214A true GB1057214A (en) 1967-02-01

Family

ID=10135540

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1980665A Expired GB1057214A (en) 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices

Country Status (4)

Country Link
DE (1) DE1564146A1 (en)
ES (1) ES326615A1 (en)
GB (1) GB1057214A (en)
NL (1) NL6606326A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor
US3987479A (en) * 1973-07-06 1976-10-19 Bbc Brown Boveri & Company Limited Semiconductor power component

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH566643A5 (en) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE3137695A1 (en) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH A MULTILAYER SEMICONDUCTOR BODY WITH PNPN LAYER SEQUENCE AND METHOD FOR THE PRODUCTION THEREOF

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3987479A (en) * 1973-07-06 1976-10-19 Bbc Brown Boveri & Company Limited Semiconductor power component
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Also Published As

Publication number Publication date
NL6606326A (en) 1966-11-14
DE1564146A1 (en) 1970-02-26
ES326615A1 (en) 1967-03-01

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