NL6606326A - - Google Patents

Info

Publication number
NL6606326A
NL6606326A NL6606326A NL6606326A NL6606326A NL 6606326 A NL6606326 A NL 6606326A NL 6606326 A NL6606326 A NL 6606326A NL 6606326 A NL6606326 A NL 6606326A NL 6606326 A NL6606326 A NL 6606326A
Authority
NL
Netherlands
Application number
NL6606326A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6606326A publication Critical patent/NL6606326A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
NL6606326A 1965-05-11 1966-05-10 NL6606326A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1980665A GB1057214A (en) 1965-05-11 1965-05-11 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
NL6606326A true NL6606326A (en) 1966-11-14

Family

ID=10135540

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6606326A NL6606326A (en) 1965-05-11 1966-05-10

Country Status (4)

Country Link
DE (1) DE1564146A1 (en)
ES (1) ES326615A1 (en)
GB (1) GB1057214A (en)
NL (1) NL6606326A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE7328984U (en) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie POWER SEMICONDUCTOR COMPONENT
CH566643A5 (en) * 1973-10-11 1975-09-15 Bbc Brown Boveri & Cie
DE2358937C3 (en) * 1973-11-27 1976-07-15 Licentia Gmbh THYRISTOR FOR HIGH VOLTAGE IN THE KILOVOLT RANGE
DE3137695A1 (en) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH A MULTILAYER SEMICONDUCTOR BODY WITH PNPN LAYER SEQUENCE AND METHOD FOR THE PRODUCTION THEREOF

Also Published As

Publication number Publication date
GB1057214A (en) 1967-02-01
ES326615A1 (en) 1967-03-01
DE1564146A1 (en) 1970-02-26

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