DE2353348A1 - Feldeffekttransistor und verfahren zu dessen herstellung - Google Patents

Feldeffekttransistor und verfahren zu dessen herstellung

Info

Publication number
DE2353348A1
DE2353348A1 DE19732353348 DE2353348A DE2353348A1 DE 2353348 A1 DE2353348 A1 DE 2353348A1 DE 19732353348 DE19732353348 DE 19732353348 DE 2353348 A DE2353348 A DE 2353348A DE 2353348 A1 DE2353348 A1 DE 2353348A1
Authority
DE
Germany
Prior art keywords
gate
field effect
effect transistor
recesses
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732353348
Other languages
German (de)
English (en)
Inventor
William Lloyd George
Robert Guy Hays
Chongkook John Rhee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE2353348A1 publication Critical patent/DE2353348A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19732353348 1972-10-24 1973-10-24 Feldeffekttransistor und verfahren zu dessen herstellung Pending DE2353348A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00301575A US3855608A (en) 1972-10-24 1972-10-24 Vertical channel junction field-effect transistors and method of manufacture

Publications (1)

Publication Number Publication Date
DE2353348A1 true DE2353348A1 (de) 1974-05-09

Family

ID=23163973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732353348 Pending DE2353348A1 (de) 1972-10-24 1973-10-24 Feldeffekttransistor und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US3855608A (https=)
JP (1) JPS4977583A (https=)
DE (1) DE2353348A1 (https=)
FR (1) FR2204047A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3977017A (en) * 1973-04-25 1976-08-24 Sony Corporation Multi-channel junction gated field effect transistor and method of making same
US3953879A (en) * 1974-07-12 1976-04-27 Massachusetts Institute Of Technology Current-limiting field effect device
US4569118A (en) * 1977-12-23 1986-02-11 General Electric Company Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure
US4587540A (en) * 1982-04-05 1986-05-06 International Business Machines Corporation Vertical MESFET with mesa step defining gate length
US4528745A (en) * 1982-07-13 1985-07-16 Toyo Denki Seizo Kabushiki Kaisha Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques
US4495511A (en) * 1982-08-23 1985-01-22 The United States Of America As Represented By The Secretary Of The Navy Permeable base transistor structure
US4801554A (en) * 1983-03-31 1989-01-31 Bbc Brown, Boveri & Company, Limited Process for manufacturing a power semiconductor component
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4903189A (en) * 1988-04-27 1990-02-20 General Electric Company Low noise, high frequency synchronous rectifier
US5264381A (en) * 1989-01-18 1993-11-23 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
US5143859A (en) * 1989-01-18 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a static induction type switching device
KR19990006170A (ko) 1997-06-30 1999-01-25 김영환 수평 바이폴라형 전계 효과 트랜지스터 및 그 제조 방법
US6133615A (en) * 1998-04-13 2000-10-17 Wisconsin Alumni Research Foundation Photodiode arrays having minimized cross-talk between diodes
EP4583166A1 (en) * 2024-01-05 2025-07-09 Infineon Technologies Austria AG Bi-directional junction field-effect transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054034A (en) * 1958-10-01 1962-09-11 Rca Corp Semiconductor devices and method of manufacture thereof
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
US3381188A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Planar multi-channel field-effect triode
US3431150A (en) * 1966-10-07 1969-03-04 Us Air Force Process for implanting grids in semiconductor devices
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby

Also Published As

Publication number Publication date
FR2204047A1 (https=) 1974-05-17
US3855608A (en) 1974-12-17
JPS4977583A (https=) 1974-07-26

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