DE2353100A1 - Verfahren zum fortlaufenden herstellen mindestens einer drahtverbindung in halbleiter-bauteilen und vorrichtung zur ausfuehrung des verfahrens - Google Patents

Verfahren zum fortlaufenden herstellen mindestens einer drahtverbindung in halbleiter-bauteilen und vorrichtung zur ausfuehrung des verfahrens

Info

Publication number
DE2353100A1
DE2353100A1 DE19732353100 DE2353100A DE2353100A1 DE 2353100 A1 DE2353100 A1 DE 2353100A1 DE 19732353100 DE19732353100 DE 19732353100 DE 2353100 A DE2353100 A DE 2353100A DE 2353100 A1 DE2353100 A1 DE 2353100A1
Authority
DE
Germany
Prior art keywords
wire
piece
ball
supply
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19732353100
Other languages
German (de)
English (en)
Inventor
Karl Nicklaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Esec Sales SA
Original Assignee
Esec Sales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Esec Sales SA filed Critical Esec Sales SA
Publication of DE2353100A1 publication Critical patent/DE2353100A1/de
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
DE19732353100 1972-10-26 1973-10-23 Verfahren zum fortlaufenden herstellen mindestens einer drahtverbindung in halbleiter-bauteilen und vorrichtung zur ausfuehrung des verfahrens Pending DE2353100A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH1563572A CH558983A (de) 1972-10-26 1972-10-26 Verfahren zum fortlaufenden herstellen mindestens einer drahtverbindung in halbleiter-bauteilen und vorrichtung zur ausfuehrung des verfahrens.
GB1838075A GB1464687A (en) 1972-10-26 1975-05-02 Connections for semiconductor components

Publications (1)

Publication Number Publication Date
DE2353100A1 true DE2353100A1 (de) 1974-05-09

Family

ID=62527839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19732353100 Pending DE2353100A1 (de) 1972-10-26 1973-10-23 Verfahren zum fortlaufenden herstellen mindestens einer drahtverbindung in halbleiter-bauteilen und vorrichtung zur ausfuehrung des verfahrens

Country Status (4)

Country Link
CH (1) CH558983A (hu)
DE (1) DE2353100A1 (hu)
FR (1) FR2204886B3 (hu)
GB (2) GB1430666A (hu)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608250A1 (de) * 1976-02-28 1977-09-08 Licentia Gmbh Verfahren zum kontaktieren von auf halbleiterkoerpern befindlichen anschlusskontakten
DE4417419A1 (de) * 1993-05-21 1994-11-24 Rohm Co Ltd Verfahren zur Bildung eines Kugelendes für einen Lötdraht
US5395037A (en) * 1992-04-22 1995-03-07 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
DE4433503A1 (de) * 1993-09-21 1995-03-23 Rohm Co Ltd Halbleiterbauelement mit Halbleiterchip und Verfahren zu dessen Herstellung
US5644281A (en) * 1992-04-07 1997-07-01 Rohm Co., Ltd. Electronic component incorporating solder fuse wire

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608250A1 (de) * 1976-02-28 1977-09-08 Licentia Gmbh Verfahren zum kontaktieren von auf halbleiterkoerpern befindlichen anschlusskontakten
US5644281A (en) * 1992-04-07 1997-07-01 Rohm Co., Ltd. Electronic component incorporating solder fuse wire
US5395037A (en) * 1992-04-22 1995-03-07 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
DE4417419A1 (de) * 1993-05-21 1994-11-24 Rohm Co Ltd Verfahren zur Bildung eines Kugelendes für einen Lötdraht
US5431329A (en) * 1993-05-21 1995-07-11 Rohm Co., Ltd. Method of forming a ball end for a solder wire
DE4417419C2 (de) * 1993-05-21 2000-11-02 Rohm Co Ltd Verfahren zur Formung einer Kugel an einem Lötdraht
DE4433503A1 (de) * 1993-09-21 1995-03-23 Rohm Co Ltd Halbleiterbauelement mit Halbleiterchip und Verfahren zu dessen Herstellung
DE4433503C2 (de) * 1993-09-21 2001-04-26 Rohm Co Ltd Verfahren zum Herstellen eines Halbleiterbauelements

Also Published As

Publication number Publication date
FR2204886B3 (hu) 1976-09-17
FR2204886A1 (hu) 1974-05-24
CH558983A (de) 1975-02-14
GB1464687A (en) 1977-02-16
GB1430666A (en) 1976-03-31

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