DE2341216C2 - Verfahren zur vollständigen Entfernung eines kohlenstoffhaltigen Materials von der Oberfläche eines Trägers - Google Patents

Verfahren zur vollständigen Entfernung eines kohlenstoffhaltigen Materials von der Oberfläche eines Trägers

Info

Publication number
DE2341216C2
DE2341216C2 DE2341216A DE2341216A DE2341216C2 DE 2341216 C2 DE2341216 C2 DE 2341216C2 DE 2341216 A DE2341216 A DE 2341216A DE 2341216 A DE2341216 A DE 2341216A DE 2341216 C2 DE2341216 C2 DE 2341216C2
Authority
DE
Germany
Prior art keywords
oxygen
carrier
ozone
carbonaceous material
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2341216A
Other languages
German (de)
English (en)
Other versions
DE2341216A1 (de
Inventor
Donald Allen Scotia N.Y. Bolon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2341216A1 publication Critical patent/DE2341216A1/de
Application granted granted Critical
Publication of DE2341216C2 publication Critical patent/DE2341216C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE2341216A 1972-08-18 1973-08-16 Verfahren zur vollständigen Entfernung eines kohlenstoffhaltigen Materials von der Oberfläche eines Trägers Expired DE2341216C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US28176472A 1972-08-18 1972-08-18

Publications (2)

Publication Number Publication Date
DE2341216A1 DE2341216A1 (de) 1974-02-28
DE2341216C2 true DE2341216C2 (de) 1985-11-07

Family

ID=23078694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2341216A Expired DE2341216C2 (de) 1972-08-18 1973-08-16 Verfahren zur vollständigen Entfernung eines kohlenstoffhaltigen Materials von der Oberfläche eines Trägers

Country Status (5)

Country Link
JP (1) JPS5815939B2 (tr)
DE (1) DE2341216C2 (tr)
FR (1) FR2196611A5 (tr)
GB (1) GB1408067A (tr)
IT (1) IT992983B (tr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202158C1 (tr) * 1992-01-27 1993-07-22 Siemens Ag, 8000 Muenchen, De
US5417826A (en) * 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341592A (en) * 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
JPS5856340A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体ウエハ浄化方法
DE3310117A1 (de) * 1982-04-05 1983-10-06 Maxwell Lab Verfahren zur photochemischen entseuchung
JPH0612766B2 (ja) * 1983-03-04 1994-02-16 株式会社精密エンタプライズ 光照射装置
JPS6039239U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6039240U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6039238U (ja) * 1983-08-24 1985-03-19 ウシオ電機株式会社 紫外線洗浄装置
JPS6049630A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体装置の製造方法
JPS6053029A (ja) * 1983-09-02 1985-03-26 Ushio Inc 紫外線洗浄装置
JPS6127635A (ja) * 1984-07-17 1986-02-07 Samuko Internatl Kenkyusho:Kk フオトレジストの高能率乾式除去装置
JPS6153335A (ja) * 1984-08-22 1986-03-17 Tohoku Richo Kk プラスチツクのドライエツチング法
JPS6177852A (ja) * 1984-09-26 1986-04-21 Fujitsu Ltd パターン形成方法
JPH0622220B2 (ja) * 1984-11-19 1994-03-23 富士通株式会社 レジスト灰化方法
JPS61163342A (ja) * 1985-01-14 1986-07-24 Ricoh Co Ltd フオトレジスト除去方法
JPH0810690B2 (ja) * 1987-01-29 1996-01-31 東京エレクトロン株式会社 アッシング方法及びアッシング装置
US4923486A (en) * 1988-12-22 1990-05-08 University Of Dayton Gas chromatography methods and apparatus
US5028243A (en) * 1988-12-22 1991-07-02 University Of Dayton Gas chromatography methods and apparatus
US5068040A (en) * 1989-04-03 1991-11-26 Hughes Aircraft Company Dense phase gas photochemical process for substrate treatment
DE4113523A1 (de) * 1991-04-25 1992-10-29 Abb Patent Gmbh Verfahren zur behandlung von oberflaechen
JPH05109674A (ja) * 1991-10-18 1993-04-30 Ushio Inc レジスト膜の灰化方法と灰化装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2443373A (en) * 1943-08-20 1948-06-15 Victor N Borsoff Method of removing carbon and carbonaceous matter
US3664899A (en) * 1969-12-29 1972-05-23 Gen Electric Removal of organic polymeric films from a substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202158C1 (tr) * 1992-01-27 1993-07-22 Siemens Ag, 8000 Muenchen, De
US5417826A (en) * 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors

Also Published As

Publication number Publication date
DE2341216A1 (de) 1974-02-28
JPS503958A (tr) 1975-01-16
GB1408067A (en) 1975-10-01
JPS5815939B2 (ja) 1983-03-28
FR2196611A5 (tr) 1974-03-15
IT992983B (it) 1975-09-30

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Legal Events

Date Code Title Description
OD Request for examination
8120 Willingness to grant licences paragraph 23
8181 Inventor (new situation)

Free format text: BOLON, DONALD ALLEN, SCOTIA, N.Y., US

D2 Grant after examination
8364 No opposition during term of opposition