DE2161055A1 - Verfahren zum Niederschlagen eines hitzebeständigen Metalls - Google Patents
Verfahren zum Niederschlagen eines hitzebeständigen MetallsInfo
- Publication number
- DE2161055A1 DE2161055A1 DE19712161055 DE2161055A DE2161055A1 DE 2161055 A1 DE2161055 A1 DE 2161055A1 DE 19712161055 DE19712161055 DE 19712161055 DE 2161055 A DE2161055 A DE 2161055A DE 2161055 A1 DE2161055 A1 DE 2161055A1
- Authority
- DE
- Germany
- Prior art keywords
- silicon dioxide
- hexafluoride
- tungsten
- dioxide layer
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 18
- 239000003870 refractory metal Substances 0.000 title claims description 9
- 238000000151 deposition Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 18
- 239000010937 tungsten Substances 0.000 claims description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- WSWMGHRLUYADNA-UHFFFAOYSA-N 7-nitro-1,2,3,4-tetrahydroquinoline Chemical compound C1CCNC2=CC([N+](=O)[O-])=CC=C21 WSWMGHRLUYADNA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 238000011010 flushing procedure Methods 0.000 claims 1
- 238000003197 gene knockdown Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- -1 so that 2 Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9779670A | 1970-12-14 | 1970-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2161055A1 true DE2161055A1 (de) | 1972-06-29 |
Family
ID=22265175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712161055 Pending DE2161055A1 (de) | 1970-12-14 | 1971-12-09 | Verfahren zum Niederschlagen eines hitzebeständigen Metalls |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3785862A (enrdf_load_stackoverflow) |
| JP (1) | JPS517156B1 (enrdf_load_stackoverflow) |
| BE (1) | BE776573A (enrdf_load_stackoverflow) |
| CA (1) | CA960923A (enrdf_load_stackoverflow) |
| DE (1) | DE2161055A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2118011B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1364898A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3141567A1 (de) * | 1981-10-20 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1399163A (en) * | 1972-11-08 | 1975-06-25 | Ferranti Ltd | Methods of manufacturing semiconductor devices |
| JPS52138961U (enrdf_load_stackoverflow) * | 1976-04-16 | 1977-10-21 | ||
| US4265935A (en) * | 1977-04-28 | 1981-05-05 | Micro Power Systems Inc. | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
| JPS54151577U (enrdf_load_stackoverflow) * | 1978-04-10 | 1979-10-22 | ||
| US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
| US4343676A (en) * | 1981-03-26 | 1982-08-10 | Rca Corporation | Etching a semiconductor material and automatically stopping same |
| US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
| US4471004A (en) * | 1983-04-28 | 1984-09-11 | General Electric Company | Method of forming refractory metal conductors of low resistivity |
| US4584207A (en) * | 1984-09-24 | 1986-04-22 | General Electric Company | Method for nucleating and growing tungsten films |
| US5084414A (en) * | 1985-03-15 | 1992-01-28 | Hewlett-Packard Company | Metal interconnection system with a planar surface |
| JPS61274345A (ja) * | 1985-05-29 | 1986-12-04 | Toshiba Corp | 半導体装置の製造方法 |
| US4808552A (en) * | 1985-09-11 | 1989-02-28 | Texas Instruments Incorporated | Process for making vertically-oriented interconnections for VLSI devices |
| US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
| US4650696A (en) * | 1985-10-01 | 1987-03-17 | Harris Corporation | Process using tungsten for multilevel metallization |
| US4741928A (en) * | 1985-12-27 | 1988-05-03 | General Electric Company | Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces |
| US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
| WO1988001102A1 (en) * | 1986-07-31 | 1988-02-11 | American Telephone & Telegraph Company | Semiconductor devices having improved metallization |
| US4902533A (en) * | 1987-06-19 | 1990-02-20 | Motorola, Inc. | Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide |
| JP2733244B2 (ja) * | 1988-04-07 | 1998-03-30 | 株式会社日立製作所 | 配線形成方法 |
| US5182231A (en) * | 1988-04-07 | 1993-01-26 | Hitachi, Ltd. | Method for modifying wiring of semiconductor device |
| US5037775A (en) * | 1988-11-30 | 1991-08-06 | Mcnc | Method for selectively depositing single elemental semiconductor material on substrates |
| US5112439A (en) * | 1988-11-30 | 1992-05-12 | Mcnc | Method for selectively depositing material on substrates |
| ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
| US6022485A (en) * | 1997-10-17 | 2000-02-08 | International Business Machines Corporation | Method for controlled removal of material from a solid surface |
| US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7704327B2 (en) * | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
| JP4941921B2 (ja) * | 2005-03-14 | 2012-05-30 | 株式会社アルバック | 選択Ｗ−ＣＶＤ法及びＣｕ多層配線の製作法 |
| DE102008035235B4 (de) * | 2008-07-29 | 2014-05-22 | Ivoclar Vivadent Ag | Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen |
| JP5521561B2 (ja) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477872A (en) * | 1966-09-21 | 1969-11-11 | Rca Corp | Method of depositing refractory metals |
-
1970
- 1970-12-14 US US00097796A patent/US3785862A/en not_active Expired - Lifetime
-
1971
- 1971-10-27 CA CA126,294A patent/CA960923A/en not_active Expired
- 1971-12-09 DE DE19712161055 patent/DE2161055A1/de active Pending
- 1971-12-09 GB GB5735171A patent/GB1364898A/en not_active Expired
- 1971-12-10 FR FR7144396A patent/FR2118011B1/fr not_active Expired
- 1971-12-10 BE BE776573A patent/BE776573A/xx unknown
- 1971-12-14 JP JP46101377A patent/JPS517156B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3141567A1 (de) * | 1981-10-20 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von schichten aus hochschmelzenden metallen bei niedrigen substrattemperaturen |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1364898A (en) | 1974-08-29 |
| BE776573A (fr) | 1972-04-04 |
| CA960923A (en) | 1975-01-14 |
| FR2118011B1 (enrdf_load_stackoverflow) | 1975-08-29 |
| FR2118011A1 (enrdf_load_stackoverflow) | 1972-07-28 |
| US3785862A (en) | 1974-01-15 |
| JPS517156B1 (enrdf_load_stackoverflow) | 1976-03-05 |
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