CA960923A - Method for depositing refractory metal - Google Patents
Method for depositing refractory metalInfo
- Publication number
- CA960923A CA960923A CA126,294A CA126294A CA960923A CA 960923 A CA960923 A CA 960923A CA 126294 A CA126294 A CA 126294A CA 960923 A CA960923 A CA 960923A
- Authority
- CA
- Canada
- Prior art keywords
- refractory metal
- depositing refractory
- depositing
- metal
- refractory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9779670A | 1970-12-14 | 1970-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA960923A true CA960923A (en) | 1975-01-14 |
Family
ID=22265175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA126,294A Expired CA960923A (en) | 1970-12-14 | 1971-10-27 | Method for depositing refractory metal |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3785862A (en) |
| JP (1) | JPS517156B1 (en) |
| BE (1) | BE776573A (en) |
| CA (1) | CA960923A (en) |
| DE (1) | DE2161055A1 (en) |
| FR (1) | FR2118011B1 (en) |
| GB (1) | GB1364898A (en) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1399163A (en) * | 1972-11-08 | 1975-06-25 | Ferranti Ltd | Methods of manufacturing semiconductor devices |
| JPS52138961U (en) * | 1976-04-16 | 1977-10-21 | ||
| US4265935A (en) * | 1977-04-28 | 1981-05-05 | Micro Power Systems Inc. | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
| JPS54151577U (en) * | 1978-04-10 | 1979-10-22 | ||
| US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
| US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
| US4343676A (en) * | 1981-03-26 | 1982-08-10 | Rca Corporation | Etching a semiconductor material and automatically stopping same |
| DE3141567C2 (en) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Process for producing layers consisting of tantalum, tungsten or molybdenum at low temperatures and using these layers |
| US4471004A (en) * | 1983-04-28 | 1984-09-11 | General Electric Company | Method of forming refractory metal conductors of low resistivity |
| US4584207A (en) * | 1984-09-24 | 1986-04-22 | General Electric Company | Method for nucleating and growing tungsten films |
| US5084414A (en) * | 1985-03-15 | 1992-01-28 | Hewlett-Packard Company | Metal interconnection system with a planar surface |
| JPS61274345A (en) * | 1985-05-29 | 1986-12-04 | Toshiba Corp | Manufacture of semiconductor device |
| US4808552A (en) * | 1985-09-11 | 1989-02-28 | Texas Instruments Incorporated | Process for making vertically-oriented interconnections for VLSI devices |
| US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
| US4650696A (en) * | 1985-10-01 | 1987-03-17 | Harris Corporation | Process using tungsten for multilevel metallization |
| US4741928A (en) * | 1985-12-27 | 1988-05-03 | General Electric Company | Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces |
| US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
| EP0275299A1 (en) * | 1986-07-31 | 1988-07-27 | AT&T Corp. | Semiconductor devices having improved metallization |
| US4902533A (en) * | 1987-06-19 | 1990-02-20 | Motorola, Inc. | Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide |
| US5182231A (en) * | 1988-04-07 | 1993-01-26 | Hitachi, Ltd. | Method for modifying wiring of semiconductor device |
| JP2733244B2 (en) * | 1988-04-07 | 1998-03-30 | 株式会社日立製作所 | Wiring formation method |
| US5037775A (en) * | 1988-11-30 | 1991-08-06 | Mcnc | Method for selectively depositing single elemental semiconductor material on substrates |
| US5112439A (en) * | 1988-11-30 | 1992-05-12 | Mcnc | Method for selectively depositing material on substrates |
| DE69120446T2 (en) * | 1990-02-19 | 1996-11-14 | Canon Kk | Process for producing deposited metal layer containing aluminum as the main component using alkyl aluminum hydride |
| US6022485A (en) | 1997-10-17 | 2000-02-08 | International Business Machines Corporation | Method for controlled removal of material from a solid surface |
| US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7704327B2 (en) * | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
| JP4941921B2 (en) * | 2005-03-14 | 2012-05-30 | 株式会社アルバック | Selective W-CVD method and Cu multilayer wiring fabrication method |
| DE102008035235B4 (en) * | 2008-07-29 | 2014-05-22 | Ivoclar Vivadent Ag | Device for heating molded parts, in particular dental ceramic molded parts |
| JP5521561B2 (en) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | Manufacturing method of bonded wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477872A (en) * | 1966-09-21 | 1969-11-11 | Rca Corp | Method of depositing refractory metals |
-
1970
- 1970-12-14 US US00097796A patent/US3785862A/en not_active Expired - Lifetime
-
1971
- 1971-10-27 CA CA126,294A patent/CA960923A/en not_active Expired
- 1971-12-09 DE DE19712161055 patent/DE2161055A1/en active Pending
- 1971-12-09 GB GB5735171A patent/GB1364898A/en not_active Expired
- 1971-12-10 FR FR7144396A patent/FR2118011B1/fr not_active Expired
- 1971-12-10 BE BE776573A patent/BE776573A/en unknown
- 1971-12-14 JP JP46101377A patent/JPS517156B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS517156B1 (en) | 1976-03-05 |
| FR2118011B1 (en) | 1975-08-29 |
| FR2118011A1 (en) | 1972-07-28 |
| DE2161055A1 (en) | 1972-06-29 |
| BE776573A (en) | 1972-04-04 |
| US3785862A (en) | 1974-01-15 |
| GB1364898A (en) | 1974-08-29 |
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