FR2118011B1 - - Google Patents

Info

Publication number
FR2118011B1
FR2118011B1 FR7144396A FR7144396A FR2118011B1 FR 2118011 B1 FR2118011 B1 FR 2118011B1 FR 7144396 A FR7144396 A FR 7144396A FR 7144396 A FR7144396 A FR 7144396A FR 2118011 B1 FR2118011 B1 FR 2118011B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7144396A
Other versions
FR2118011A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2118011A1 publication Critical patent/FR2118011A1/fr
Application granted granted Critical
Publication of FR2118011B1 publication Critical patent/FR2118011B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7144396A 1970-12-14 1971-12-10 Expired FR2118011B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9779670A 1970-12-14 1970-12-14

Publications (2)

Publication Number Publication Date
FR2118011A1 FR2118011A1 (fr) 1972-07-28
FR2118011B1 true FR2118011B1 (fr) 1975-08-29

Family

ID=22265175

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7144396A Expired FR2118011B1 (fr) 1970-12-14 1971-12-10

Country Status (7)

Country Link
US (1) US3785862A (fr)
JP (1) JPS517156B1 (fr)
BE (1) BE776573A (fr)
CA (1) CA960923A (fr)
DE (1) DE2161055A1 (fr)
FR (1) FR2118011B1 (fr)
GB (1) GB1364898A (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
JPS52138961U (fr) * 1976-04-16 1977-10-21
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
JPS5487175A (en) * 1977-12-23 1979-07-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54151577U (fr) * 1978-04-10 1979-10-22
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4343676A (en) * 1981-03-26 1982-08-10 Rca Corporation Etching a semiconductor material and automatically stopping same
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten
US4471004A (en) * 1983-04-28 1984-09-11 General Electric Company Method of forming refractory metal conductors of low resistivity
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
JPS61274345A (ja) * 1985-05-29 1986-12-04 Toshiba Corp 半導体装置の製造方法
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
US4650696A (en) * 1985-10-01 1987-03-17 Harris Corporation Process using tungsten for multilevel metallization
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
WO1988001102A1 (fr) * 1986-07-31 1988-02-11 American Telephone & Telegraph Company Dispositifs semiconducteurs ayant une metallisation amelioree
US4902533A (en) * 1987-06-19 1990-02-20 Motorola, Inc. Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
US5182231A (en) * 1988-04-07 1993-01-26 Hitachi, Ltd. Method for modifying wiring of semiconductor device
JP2733244B2 (ja) * 1988-04-07 1998-03-30 株式会社日立製作所 配線形成方法
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
EP0448223B1 (fr) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Procédé de formation d'un film de métal déposé avec de l'aluminium comme composant principal utilisant d'hydrure d'alkyl aluminium
US6022485A (en) 1997-10-17 2000-02-08 International Business Machines Corporation Method for controlled removal of material from a solid surface
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
JP4941921B2 (ja) * 2005-03-14 2012-05-30 株式会社アルバック 選択Ｗ−ＣＶＤ法及びＣｕ多層配線の製作法
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen
JP5521561B2 (ja) * 2010-01-12 2014-06-18 信越半導体株式会社 貼り合わせウェーハの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals

Also Published As

Publication number Publication date
DE2161055A1 (de) 1972-06-29
GB1364898A (en) 1974-08-29
FR2118011A1 (fr) 1972-07-28
BE776573A (fr) 1972-04-04
JPS517156B1 (fr) 1976-03-05
CA960923A (en) 1975-01-14
US3785862A (en) 1974-01-15

Similar Documents

Publication Publication Date Title
ATA96471A (fr)
AU1146470A (fr)
AU2044470A (fr)
AU1326870A (fr)
AU2017870A (fr)
AU2085370A (fr)
AU1833270A (fr)
AU1716970A (fr)
AU1517670A (fr)
AU1336970A (fr)
AU1591370A (fr)
AU1974970A (fr)
AU2144270A (fr)
AU2131570A (fr)
AU2130770A (fr)
AU2130570A (fr)
AU1247570A (fr)
AU1328670A (fr)
AU1235770A (fr)
AU1343870A (fr)
AU2119370A (fr)
AU2115870A (fr)
AU1189670A (fr)
AU1581370A (fr)
AU1086670A (fr)

Legal Events

Date Code Title Description
ST Notification of lapse