BE776573A - PROCESS FOR DEPOSING REFRACTORY METAL ON A SILICON BIOXIDE LAYER, IN PARTICULAR FOR THE MANUFACTURE OF MONOLITHIC SILICON MICROCIRCUITS - Google Patents

PROCESS FOR DEPOSING REFRACTORY METAL ON A SILICON BIOXIDE LAYER, IN PARTICULAR FOR THE MANUFACTURE OF MONOLITHIC SILICON MICROCIRCUITS

Info

Publication number
BE776573A
BE776573A BE776573A BE776573A BE776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A
Authority
BE
Belgium
Prior art keywords
silicon
deposing
manufacture
layer
refractory metal
Prior art date
Application number
BE776573A
Other languages
French (fr)
Inventor
W A Grill
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE776573A publication Critical patent/BE776573A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
BE776573A 1970-12-14 1971-12-10 PROCESS FOR DEPOSING REFRACTORY METAL ON A SILICON BIOXIDE LAYER, IN PARTICULAR FOR THE MANUFACTURE OF MONOLITHIC SILICON MICROCIRCUITS BE776573A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9779670A 1970-12-14 1970-12-14

Publications (1)

Publication Number Publication Date
BE776573A true BE776573A (en) 1972-04-04

Family

ID=22265175

Family Applications (1)

Application Number Title Priority Date Filing Date
BE776573A BE776573A (en) 1970-12-14 1971-12-10 PROCESS FOR DEPOSING REFRACTORY METAL ON A SILICON BIOXIDE LAYER, IN PARTICULAR FOR THE MANUFACTURE OF MONOLITHIC SILICON MICROCIRCUITS

Country Status (7)

Country Link
US (1) US3785862A (en)
JP (1) JPS517156B1 (en)
BE (1) BE776573A (en)
CA (1) CA960923A (en)
DE (1) DE2161055A1 (en)
FR (1) FR2118011B1 (en)
GB (1) GB1364898A (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
JPS52138961U (en) * 1976-04-16 1977-10-21
US4265935A (en) * 1977-04-28 1981-05-05 Micro Power Systems Inc. High temperature refractory metal contact assembly and multiple layer interconnect structure
JPS5487175A (en) * 1977-12-23 1979-07-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54151577U (en) * 1978-04-10 1979-10-22
US4404235A (en) * 1981-02-23 1983-09-13 Rca Corporation Method for improving adhesion of metal film on a dielectric surface
US4343676A (en) * 1981-03-26 1982-08-10 Rca Corporation Etching a semiconductor material and automatically stopping same
US4349408A (en) * 1981-03-26 1982-09-14 Rca Corporation Method of depositing a refractory metal on a semiconductor substrate
DE3141567C2 (en) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Process for producing layers consisting of tantalum, tungsten or molybdenum at low temperatures and using these layers
US4471004A (en) * 1983-04-28 1984-09-11 General Electric Company Method of forming refractory metal conductors of low resistivity
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films
US5084414A (en) * 1985-03-15 1992-01-28 Hewlett-Packard Company Metal interconnection system with a planar surface
JPS61274345A (en) * 1985-05-29 1986-12-04 Toshiba Corp Manufacture of semiconductor device
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
US4617087A (en) * 1985-09-27 1986-10-14 International Business Machines Corporation Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits
US4650696A (en) * 1985-10-01 1987-03-17 Harris Corporation Process using tungsten for multilevel metallization
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
EP0275299A1 (en) * 1986-07-31 1988-07-27 AT&T Corp. Semiconductor devices having improved metallization
US4902533A (en) * 1987-06-19 1990-02-20 Motorola, Inc. Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide
JP2733244B2 (en) * 1988-04-07 1998-03-30 株式会社日立製作所 Wiring formation method
US5182231A (en) * 1988-04-07 1993-01-26 Hitachi, Ltd. Method for modifying wiring of semiconductor device
US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates
EP0448223B1 (en) * 1990-02-19 1996-06-26 Canon Kabushiki Kaisha Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride
US6022485A (en) 1997-10-17 2000-02-08 International Business Machines Corporation Method for controlled removal of material from a solid surface
US7211144B2 (en) * 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
JP4941921B2 (en) * 2005-03-14 2012-05-30 株式会社アルバック Selective W-CVD method and Cu multilayer wiring fabrication method
DE102008035235B4 (en) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Device for heating molded parts, in particular dental ceramic molded parts
JP5521561B2 (en) * 2010-01-12 2014-06-18 信越半導体株式会社 Manufacturing method of bonded wafer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477872A (en) * 1966-09-21 1969-11-11 Rca Corp Method of depositing refractory metals

Also Published As

Publication number Publication date
FR2118011A1 (en) 1972-07-28
CA960923A (en) 1975-01-14
DE2161055A1 (en) 1972-06-29
JPS517156B1 (en) 1976-03-05
GB1364898A (en) 1974-08-29
US3785862A (en) 1974-01-15
FR2118011B1 (en) 1975-08-29

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