BE776573A - Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium - Google Patents
Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en siliciumInfo
- Publication number
- BE776573A BE776573A BE776573A BE776573A BE776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A BE 776573 A BE776573 A BE 776573A
- Authority
- BE
- Belgium
- Prior art keywords
- silicon
- deposing
- manufacture
- layer
- refractory metal
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 2
- 229910052710 silicon Inorganic materials 0.000 title 2
- 239000010703 silicon Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000003870 refractory metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9779670A | 1970-12-14 | 1970-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE776573A true BE776573A (fr) | 1972-04-04 |
Family
ID=22265175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE776573A BE776573A (fr) | 1970-12-14 | 1971-12-10 | Procede pour deposer un metal refractaire sur une couche de bioxyde de silicium notamment pour la fabrication de microcircuits monolithiques en silicium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3785862A (enrdf_load_stackoverflow) |
| JP (1) | JPS517156B1 (enrdf_load_stackoverflow) |
| BE (1) | BE776573A (enrdf_load_stackoverflow) |
| CA (1) | CA960923A (enrdf_load_stackoverflow) |
| DE (1) | DE2161055A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2118011B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1364898A (enrdf_load_stackoverflow) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1399163A (en) * | 1972-11-08 | 1975-06-25 | Ferranti Ltd | Methods of manufacturing semiconductor devices |
| JPS52138961U (enrdf_load_stackoverflow) * | 1976-04-16 | 1977-10-21 | ||
| US4265935A (en) * | 1977-04-28 | 1981-05-05 | Micro Power Systems Inc. | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| JPS5487175A (en) * | 1977-12-23 | 1979-07-11 | Cho Lsi Gijutsu Kenkyu Kumiai | Method of fabricating semiconductor |
| JPS54151577U (enrdf_load_stackoverflow) * | 1978-04-10 | 1979-10-22 | ||
| US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
| US4343676A (en) * | 1981-03-26 | 1982-08-10 | Rca Corporation | Etching a semiconductor material and automatically stopping same |
| US4349408A (en) * | 1981-03-26 | 1982-09-14 | Rca Corporation | Method of depositing a refractory metal on a semiconductor substrate |
| DE3141567C2 (de) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten |
| US4471004A (en) * | 1983-04-28 | 1984-09-11 | General Electric Company | Method of forming refractory metal conductors of low resistivity |
| US4584207A (en) * | 1984-09-24 | 1986-04-22 | General Electric Company | Method for nucleating and growing tungsten films |
| US5084414A (en) * | 1985-03-15 | 1992-01-28 | Hewlett-Packard Company | Metal interconnection system with a planar surface |
| JPS61274345A (ja) * | 1985-05-29 | 1986-12-04 | Toshiba Corp | 半導体装置の製造方法 |
| US4808552A (en) * | 1985-09-11 | 1989-02-28 | Texas Instruments Incorporated | Process for making vertically-oriented interconnections for VLSI devices |
| US4617087A (en) * | 1985-09-27 | 1986-10-14 | International Business Machines Corporation | Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits |
| US4650696A (en) * | 1985-10-01 | 1987-03-17 | Harris Corporation | Process using tungsten for multilevel metallization |
| US4741928A (en) * | 1985-12-27 | 1988-05-03 | General Electric Company | Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces |
| US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
| WO1988001102A1 (en) * | 1986-07-31 | 1988-02-11 | American Telephone & Telegraph Company | Semiconductor devices having improved metallization |
| US4902533A (en) * | 1987-06-19 | 1990-02-20 | Motorola, Inc. | Method for selectively depositing tungsten on a substrate by using a spin-on metal oxide |
| JP2733244B2 (ja) * | 1988-04-07 | 1998-03-30 | 株式会社日立製作所 | 配線形成方法 |
| US5182231A (en) * | 1988-04-07 | 1993-01-26 | Hitachi, Ltd. | Method for modifying wiring of semiconductor device |
| US5037775A (en) * | 1988-11-30 | 1991-08-06 | Mcnc | Method for selectively depositing single elemental semiconductor material on substrates |
| US5112439A (en) * | 1988-11-30 | 1992-05-12 | Mcnc | Method for selectively depositing material on substrates |
| ATE139866T1 (de) * | 1990-02-19 | 1996-07-15 | Canon Kk | Verfahren zum herstellen von abgeschiedener metallschicht, die aluminium als hauptkomponente enthält, mit anwendung von alkylaluminiumhydrid |
| US6022485A (en) * | 1997-10-17 | 2000-02-08 | International Business Machines Corporation | Method for controlled removal of material from a solid surface |
| US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7704327B2 (en) * | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
| JP4941921B2 (ja) * | 2005-03-14 | 2012-05-30 | 株式会社アルバック | 選択Ｗ−ＣＶＤ法及びＣｕ多層配線の製作法 |
| DE102008035235B4 (de) * | 2008-07-29 | 2014-05-22 | Ivoclar Vivadent Ag | Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen |
| JP5521561B2 (ja) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477872A (en) * | 1966-09-21 | 1969-11-11 | Rca Corp | Method of depositing refractory metals |
-
1970
- 1970-12-14 US US00097796A patent/US3785862A/en not_active Expired - Lifetime
-
1971
- 1971-10-27 CA CA126,294A patent/CA960923A/en not_active Expired
- 1971-12-09 DE DE19712161055 patent/DE2161055A1/de active Pending
- 1971-12-09 GB GB5735171A patent/GB1364898A/en not_active Expired
- 1971-12-10 FR FR7144396A patent/FR2118011B1/fr not_active Expired
- 1971-12-10 BE BE776573A patent/BE776573A/xx unknown
- 1971-12-14 JP JP46101377A patent/JPS517156B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1364898A (en) | 1974-08-29 |
| DE2161055A1 (de) | 1972-06-29 |
| CA960923A (en) | 1975-01-14 |
| FR2118011B1 (enrdf_load_stackoverflow) | 1975-08-29 |
| FR2118011A1 (enrdf_load_stackoverflow) | 1972-07-28 |
| US3785862A (en) | 1974-01-15 |
| JPS517156B1 (enrdf_load_stackoverflow) | 1976-03-05 |
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