IT967908B - Contatto metallo semiconduttore di piccola estensione superfi ciale - Google Patents
Contatto metallo semiconduttore di piccola estensione superfi cialeInfo
- Publication number
- IT967908B IT967908B IT29727/72A IT2972772A IT967908B IT 967908 B IT967908 B IT 967908B IT 29727/72 A IT29727/72 A IT 29727/72A IT 2972772 A IT2972772 A IT 2972772A IT 967908 B IT967908 B IT 967908B
- Authority
- IT
- Italy
- Prior art keywords
- metal contact
- small surface
- surface extension
- semiconductor metal
- semiconductor
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28581—Deposition of Schottky electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712148658 DE2148658C3 (de) | 1971-09-29 | Kleinflächiger Metall-Halbleiterkontakt |
Publications (1)
Publication Number | Publication Date |
---|---|
IT967908B true IT967908B (it) | 1974-03-11 |
Family
ID=5820950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT29727/72A IT967908B (it) | 1971-09-29 | 1972-09-27 | Contatto metallo semiconduttore di piccola estensione superfi ciale |
Country Status (8)
Country | Link |
---|---|
US (1) | US3831068A (it) |
JP (1) | JPS565068B2 (it) |
BE (1) | BE789498A (it) |
FR (1) | FR2154619B1 (it) |
GB (1) | GB1364604A (it) |
IT (1) | IT967908B (it) |
LU (1) | LU66176A1 (it) |
NL (1) | NL7213086A (it) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4201604A (en) * | 1975-08-13 | 1980-05-06 | Raytheon Company | Process for making a negative resistance diode utilizing spike doping |
US4076575A (en) * | 1976-06-30 | 1978-02-28 | International Business Machines Corporation | Integrated fabrication method of forming connectors through insulative layers |
JPS559428A (en) * | 1978-07-07 | 1980-01-23 | Internatl Rectifier Corp Japan Ltd | Method of manufacturing schottky barrier contact rectifier elements and schottky barrier contact rectifier element |
JPS5910363U (ja) * | 1982-07-12 | 1984-01-23 | ヤンマーディーゼル株式会社 | 建設機械の油圧配管 |
JPH0510044Y2 (it) * | 1986-09-22 | 1993-03-11 | ||
GB8728878D0 (en) * | 1987-12-10 | 1988-01-27 | Westinghouse Brake & Signal | Semiconductor contact arrangement |
JPH11214504A (ja) * | 1998-01-26 | 1999-08-06 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6956274B2 (en) * | 2002-01-11 | 2005-10-18 | Analog Devices, Inc. | TiW platinum interconnect and method of making the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1110609A (en) * | 1964-08-17 | 1968-04-24 | Semiconductors Ltd | Improvements in or relating to integrated circuit chips |
US3368124A (en) * | 1965-12-09 | 1968-02-06 | Rca Corp | Semiconductor devices |
US3451912A (en) * | 1966-07-15 | 1969-06-24 | Ibm | Schottky-barrier diode formed by sputter-deposition processes |
FR1542642A (fr) * | 1966-08-30 | 1968-10-18 | Telefunken Patent | Montage semi-conducteur |
GB1188082A (en) * | 1967-04-05 | 1970-04-15 | Hitachi Ltd | Method of making Semiconductor Device and Semiconductor Device made thereby |
US3518506A (en) * | 1967-12-06 | 1970-06-30 | Ibm | Semiconductor device with contact metallurgy thereon,and method for making same |
NL6903930A (it) * | 1969-03-14 | 1970-09-16 | ||
GB1337283A (en) * | 1969-12-26 | 1973-11-14 | Hitachi Ltd | Method of manufacturing a semiconductor device |
-
0
- BE BE789498D patent/BE789498A/xx unknown
-
1972
- 1972-09-05 US US00286265A patent/US3831068A/en not_active Expired - Lifetime
- 1972-09-27 FR FR7234090A patent/FR2154619B1/fr not_active Expired
- 1972-09-27 GB GB4464472A patent/GB1364604A/en not_active Expired
- 1972-09-27 LU LU66176A patent/LU66176A1/xx unknown
- 1972-09-27 NL NL7213086A patent/NL7213086A/xx unknown
- 1972-09-27 IT IT29727/72A patent/IT967908B/it active
- 1972-09-29 JP JP9793672A patent/JPS565068B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2154619B1 (it) | 1978-01-06 |
GB1364604A (en) | 1974-08-21 |
US3831068A (en) | 1974-08-20 |
DE2148658B2 (de) | 1977-03-17 |
FR2154619A1 (it) | 1973-05-11 |
LU66176A1 (it) | 1973-01-17 |
BE789498A (fr) | 1973-01-15 |
JPS565068B2 (it) | 1981-02-03 |
NL7213086A (it) | 1973-04-02 |
JPS4843582A (it) | 1973-06-23 |
DE2148658A1 (de) | 1973-04-05 |
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