GB1188082A - Method of making Semiconductor Device and Semiconductor Device made thereby - Google Patents
Method of making Semiconductor Device and Semiconductor Device made therebyInfo
- Publication number
- GB1188082A GB1188082A GB1453868A GB1453868A GB1188082A GB 1188082 A GB1188082 A GB 1188082A GB 1453868 A GB1453868 A GB 1453868A GB 1453868 A GB1453868 A GB 1453868A GB 1188082 A GB1188082 A GB 1188082A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alternative
- layer
- diodes
- semiconductor device
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
Abstract
1,188,082. Semi-conductor devices. HITACHI Ltd. 26 March, 1968 [5 April, 1967], No. 14538/68. Heading H1K. Schottky barriers are formed in such a way that their edges are not exposed to contamination. In the production of silicon diodes an epitaxial layer 2a of high resistivity is formed on a low resistivity substrate la, the surface of the layer is etched, washed and dried, and an overall coating of molybdenum applied at a temperature below the eutectic temperature of Mo and Si. The layer is masked and etched to have islands 3a respectively corresponding to the barriers of several diodes. An overall coating 5a of silica is then deposited and holes opened therein over the centre of the molybdenum electrodes 3a. Electrode connections 7a are then formed by overall deposition and selective removal of gold. In a variant the electrode connections are made by plating a layer of nickel in the hole and applying a solder blob which seals the hole and extends on to the silica. The individual diodes are then cut from the substrate. Alternative semiconductors are Ge and A<SP>VII</SP>B<SP>V</SP> compounds such as GaAs. Alternative barrier metals are Cr, Ti, Ta and W. Alternative insulators are silicon nitride, silicon monoxide and alumina. Alternative electrodes metals are Al, Ag and Cu.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2783467 | 1967-04-05 | ||
| JP2783467 | 1967-04-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1188082A true GB1188082A (en) | 1970-04-15 |
Family
ID=26365815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1453868A Expired GB1188082A (en) | 1967-04-05 | 1968-03-26 | Method of making Semiconductor Device and Semiconductor Device made thereby |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1567307A (en) |
| GB (1) | GB1188082A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1489659A1 (en) * | 2003-06-18 | 2004-12-22 | ABB Technology AG | Contact metallisation for semiconductor devices |
| GB2450037A (en) * | 2004-03-30 | 2008-12-10 | Texas Instruments Inc | Dual Metal Schottky Diode |
| US7902055B2 (en) | 2004-03-30 | 2011-03-08 | Texas Instruments Incoprorated | Method of manufacturing a dual metal Schottky diode |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1322056A (en) * | 1969-10-02 | 1973-07-04 | Omron Tateisi Electronics Co | Semiconductor device and method of making the same |
| BE789498A (en) * | 1971-09-29 | 1973-01-15 | Siemens Ag | LOW SURFACE METAL-SEMICONDUCTOR CONTACT |
-
1968
- 1968-03-26 GB GB1453868A patent/GB1188082A/en not_active Expired
- 1968-04-03 FR FR1567307D patent/FR1567307A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1489659A1 (en) * | 2003-06-18 | 2004-12-22 | ABB Technology AG | Contact metallisation for semiconductor devices |
| GB2450037A (en) * | 2004-03-30 | 2008-12-10 | Texas Instruments Inc | Dual Metal Schottky Diode |
| GB2450037B (en) * | 2004-03-30 | 2009-05-27 | Texas Instruments Inc | Schottky diode |
| US7902055B2 (en) | 2004-03-30 | 2011-03-08 | Texas Instruments Incoprorated | Method of manufacturing a dual metal Schottky diode |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1567307A (en) | 1969-05-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |