BE775973A - Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice - Google Patents

Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice

Info

Publication number
BE775973A
BE775973A BE775973A BE775973A BE775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A BE 775973 A BE775973 A BE 775973A
Authority
BE
Belgium
Prior art keywords
making
insulating substrate
partly covered
semiconductor layer
substrate partly
Prior art date
Application number
BE775973A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE775973A publication Critical patent/BE775973A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
BE775973A 1970-12-01 1971-11-29 Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice BE775973A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702059116 DE2059116C3 (de) 1970-12-01 1970-12-01 Verfahren zur Herstellung eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
BE775973A true BE775973A (fr) 1972-03-16

Family

ID=5789659

Family Applications (1)

Application Number Title Priority Date Filing Date
BE775973A BE775973A (fr) 1970-12-01 1971-11-29 Procede de realisation d'un composant semi-conducteur a substrat isolant recouvert partiellement d'une couche semi-conductrice

Country Status (7)

Country Link
BE (1) BE775973A (fr)
DE (1) DE2059116C3 (fr)
FR (1) FR2116424A1 (fr)
GB (1) GB1358438A (fr)
IT (1) IT941388B (fr)
LU (1) LU64363A1 (fr)
NL (1) NL7115760A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284981A1 (fr) * 1974-09-10 1976-04-09 Radiotechnique Compelec Procede d'obtention d'un circuit integre semiconducteur
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
IN157312B (fr) * 1982-01-12 1986-03-01 Rca Corp
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) * 1983-06-22 1985-01-09 Rca Corp Mosfet fabrication method
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
AU623863B2 (en) * 1987-08-24 1992-05-28 Canon Kabushiki Kaisha Method of forming crystals
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
TW205603B (fr) * 1990-09-21 1993-05-11 Anelva Corp

Also Published As

Publication number Publication date
DE2059116C3 (de) 1974-11-21
IT941388B (it) 1973-03-01
DE2059116A1 (de) 1972-07-06
DE2059116B2 (de) 1974-04-25
GB1358438A (en) 1974-07-03
FR2116424A1 (fr) 1972-07-13
LU64363A1 (fr) 1972-06-19
NL7115760A (fr) 1972-06-05

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