FR2380636B1 - Procede pour former une couche electriquement isolante sur un substrat - Google Patents
Procede pour former une couche electriquement isolante sur un substratInfo
- Publication number
- FR2380636B1 FR2380636B1 FR7803999A FR7803999A FR2380636B1 FR 2380636 B1 FR2380636 B1 FR 2380636B1 FR 7803999 A FR7803999 A FR 7803999A FR 7803999 A FR7803999 A FR 7803999A FR 2380636 B1 FR2380636 B1 FR 2380636B1
- Authority
- FR
- France
- Prior art keywords
- substrate
- forming
- insulating layer
- electrically insulating
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Magnetic Heads (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7701559A NL7701559A (nl) | 1977-02-15 | 1977-02-15 | Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2380636A1 FR2380636A1 (fr) | 1978-09-08 |
FR2380636B1 true FR2380636B1 (fr) | 1985-06-14 |
Family
ID=19827979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7803999A Expired FR2380636B1 (fr) | 1977-02-15 | 1978-02-13 | Procede pour former une couche electriquement isolante sur un substrat |
Country Status (8)
Country | Link |
---|---|
US (1) | US4176016A (fr) |
JP (1) | JPS53100785A (fr) |
CA (1) | CA1102922A (fr) |
DE (1) | DE2804602C2 (fr) |
FR (1) | FR2380636B1 (fr) |
GB (1) | GB1553181A (fr) |
HK (1) | HK8880A (fr) |
NL (1) | NL7701559A (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3032708C2 (de) * | 1980-08-30 | 1987-01-22 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur Herstellung eines Dünnschicht-Magnetfeld-Sensors |
JPS5759355A (en) * | 1980-09-26 | 1982-04-09 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0697660B2 (ja) * | 1985-03-23 | 1994-11-30 | 日本電信電話株式会社 | 薄膜形成方法 |
FR2619457B1 (fr) * | 1987-08-14 | 1989-11-17 | Commissariat Energie Atomique | Procede d'obtention d'un motif notamment en materiau ferromagnetique ayant des flancs de pente differente et tete magnetique comportant un tel motif |
US5756397A (en) * | 1993-12-28 | 1998-05-26 | Lg Semicon Co., Ltd. | Method of fabricating a wiring in a semiconductor device |
DE4400032C1 (de) * | 1994-01-03 | 1995-08-31 | Gold Star Electronics | Halbleitereinrichtung und Verfahren zu deren Herstellung |
JP2016219452A (ja) * | 2015-05-14 | 2016-12-22 | 富士通株式会社 | 多層基板及び多層基板の製造方法 |
CN114080088B (zh) * | 2020-08-10 | 2024-05-31 | 鹏鼎控股(深圳)股份有限公司 | 电路板及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE758160A (fr) * | 1969-10-31 | 1971-04-01 | Fairchild Camera Instr Co | Structure metallique a couches multiples et procede de fabrication d'une telle structure |
US3666548A (en) * | 1970-01-06 | 1972-05-30 | Ibm | Monocrystalline semiconductor body having dielectrically isolated regions and method of forming |
DE2123630A1 (en) * | 1970-05-12 | 1971-12-02 | Texas Instruments Inc | Semiconductor with multilayer interconnections - using - successive masking and photo etching |
US3700508A (en) * | 1970-06-25 | 1972-10-24 | Gen Instrument Corp | Fabrication of integrated microcircuit devices |
FR2119930B1 (fr) * | 1970-12-31 | 1974-08-19 | Ibm | |
US3755123A (en) * | 1971-03-30 | 1973-08-28 | Method for sputtering a film on an irregular surface | |
JPS5217995B2 (fr) * | 1972-02-18 | 1977-05-19 | ||
US3868723A (en) * | 1973-06-29 | 1975-02-25 | Ibm | Integrated circuit structure accommodating via holes |
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
US3839111A (en) * | 1973-08-20 | 1974-10-01 | Rca Corp | Method of etching silicon oxide to produce a tapered edge thereon |
US4022930A (en) * | 1975-05-30 | 1977-05-10 | Bell Telephone Laboratories, Incorporated | Multilevel metallization for integrated circuits |
-
1977
- 1977-02-15 NL NL7701559A patent/NL7701559A/xx not_active Application Discontinuation
-
1978
- 1978-02-03 DE DE2804602A patent/DE2804602C2/de not_active Expired
- 1978-02-08 CA CA296,501A patent/CA1102922A/fr not_active Expired
- 1978-02-10 GB GB5435/78A patent/GB1553181A/en not_active Expired
- 1978-02-13 FR FR7803999A patent/FR2380636B1/fr not_active Expired
- 1978-02-13 US US05/877,167 patent/US4176016A/en not_active Expired - Lifetime
- 1978-02-13 JP JP1420278A patent/JPS53100785A/ja active Granted
-
1980
- 1980-03-06 HK HK88/80A patent/HK8880A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL7701559A (nl) | 1978-08-17 |
JPS638613B2 (fr) | 1988-02-23 |
HK8880A (en) | 1980-03-14 |
GB1553181A (en) | 1979-09-19 |
JPS53100785A (en) | 1978-09-02 |
US4176016A (en) | 1979-11-27 |
DE2804602A1 (de) | 1978-08-17 |
CA1102922A (fr) | 1981-06-09 |
FR2380636A1 (fr) | 1978-09-08 |
DE2804602C2 (de) | 1985-01-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |