FR2119930B1 - - Google Patents
Info
- Publication number
- FR2119930B1 FR2119930B1 FR7140205A FR7140205A FR2119930B1 FR 2119930 B1 FR2119930 B1 FR 2119930B1 FR 7140205 A FR7140205 A FR 7140205A FR 7140205 A FR7140205 A FR 7140205A FR 2119930 B1 FR2119930 B1 FR 2119930B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10325070A | 1970-12-31 | 1970-12-31 | |
US05/512,781 US3983022A (en) | 1970-12-31 | 1974-10-07 | Process for planarizing a surface |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2119930A1 FR2119930A1 (fr) | 1972-08-11 |
FR2119930B1 true FR2119930B1 (fr) | 1974-08-19 |
Family
ID=26800239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7140205A Expired FR2119930B1 (fr) | 1970-12-31 | 1971-11-04 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3983022A (fr) |
DE (1) | DE2164838C3 (fr) |
FR (1) | FR2119930B1 (fr) |
GB (1) | GB1361214A (fr) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3804738A (en) * | 1973-06-29 | 1974-04-16 | Ibm | Partial planarization of electrically insulative films by resputtering |
US4036723A (en) * | 1975-08-21 | 1977-07-19 | International Business Machines Corporation | RF bias sputtering method for producing insulating films free of surface irregularities |
US4035276A (en) * | 1976-04-29 | 1977-07-12 | Ibm Corporation | Making coplanar layers of thin films |
NL7701559A (nl) * | 1977-02-15 | 1978-08-17 | Philips Nv | Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon. |
US4131533A (en) * | 1977-12-30 | 1978-12-26 | International Business Machines Corporation | RF sputtering apparatus having floating anode shield |
JPS56133884A (en) * | 1980-03-24 | 1981-10-20 | Hitachi Ltd | Manufacture of photoelectric transducer |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
JPS5982746A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | 半導体装置の電極配線方法 |
US4470874A (en) * | 1983-12-15 | 1984-09-11 | International Business Machines Corporation | Planarization of multi-level interconnected metallization system |
US4515668A (en) * | 1984-04-25 | 1985-05-07 | Honeywell Inc. | Method of forming a dielectric layer comprising a gettering material |
US4797375A (en) * | 1984-10-05 | 1989-01-10 | Honeywell Inc. | Fabrication of metal interconnect for semiconductor device |
JPH0697660B2 (ja) * | 1985-03-23 | 1994-11-30 | 日本電信電話株式会社 | 薄膜形成方法 |
KR900005785B1 (ko) * | 1985-05-13 | 1990-08-11 | 닛뽄덴신덴와 가부시끼가이샤 | 평탄성 박막의 제조방법 |
US4690746A (en) * | 1986-02-24 | 1987-09-01 | Genus, Inc. | Interlayer dielectric process |
US4732658A (en) * | 1986-12-03 | 1988-03-22 | Honeywell Inc. | Planarization of silicon semiconductor devices |
US4756810A (en) * | 1986-12-04 | 1988-07-12 | Machine Technology, Inc. | Deposition and planarizing methods and apparatus |
US4874493A (en) * | 1988-03-28 | 1989-10-17 | Microelectronics And Computer Technology Corporation | Method of deposition of metal into cavities on a substrate |
US5545594A (en) * | 1993-10-26 | 1996-08-13 | Yazaki Meter Co., Ltd. | Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented |
US5393703A (en) * | 1993-11-12 | 1995-02-28 | Motorola, Inc. | Process for forming a conductive layer for semiconductor devices |
JP3971213B2 (ja) * | 2002-03-11 | 2007-09-05 | アルプス電気株式会社 | キーボード入力装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL83318C (fr) * | 1953-02-17 | |||
US3287612A (en) * | 1963-12-17 | 1966-11-22 | Bell Telephone Labor Inc | Semiconductor contacts and protective coatings for planar devices |
NL134170C (fr) * | 1963-12-17 | 1900-01-01 | ||
US3479269A (en) * | 1967-01-04 | 1969-11-18 | Bell Telephone Labor Inc | Method for sputter etching using a high frequency negative pulse train |
GB1299452A (en) * | 1969-02-21 | 1972-12-13 | Smiths Industries Ltd | Improvements in or relating to methods of machining |
US3661761A (en) * | 1969-06-02 | 1972-05-09 | Ibm | Rf sputtering apparatus for promoting resputtering of film during deposition |
US3661747A (en) * | 1969-08-11 | 1972-05-09 | Bell Telephone Labor Inc | Method for etching thin film materials by direct cathodic back sputtering |
US3676317A (en) * | 1970-10-23 | 1972-07-11 | Stromberg Datagraphix Inc | Sputter etching process |
-
1971
- 1971-11-04 FR FR7140205A patent/FR2119930B1/fr not_active Expired
- 1971-11-22 GB GB5405971A patent/GB1361214A/en not_active Expired
- 1971-12-27 DE DE2164838A patent/DE2164838C3/de not_active Expired
-
1974
- 1974-10-07 US US05/512,781 patent/US3983022A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2164838B2 (de) | 1980-04-24 |
FR2119930A1 (fr) | 1972-08-11 |
GB1361214A (en) | 1974-07-24 |
DE2164838C3 (de) | 1980-12-18 |
US3983022A (en) | 1976-09-28 |
DE2164838A1 (de) | 1972-07-20 |
Similar Documents
Legal Events
Date | Code | Title | Description |
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ST | Notification of lapse |