GB1553181A - Forming electrically insulating layers - Google Patents

Forming electrically insulating layers

Info

Publication number
GB1553181A
GB1553181A GB5435/78A GB543578A GB1553181A GB 1553181 A GB1553181 A GB 1553181A GB 5435/78 A GB5435/78 A GB 5435/78A GB 543578 A GB543578 A GB 543578A GB 1553181 A GB1553181 A GB 1553181A
Authority
GB
United Kingdom
Prior art keywords
electrically insulating
insulating layers
forming electrically
forming
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5435/78A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB1553181A publication Critical patent/GB1553181A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
GB5435/78A 1977-02-15 1978-02-10 Forming electrically insulating layers Expired GB1553181A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7701559A NL7701559A (en) 1977-02-15 1977-02-15 CREATING SLOPES ON METAL PATTERNS, AS WELL AS SUBSTRATE FOR AN INTEGRATED CIRCUIT PROVIDED WITH SUCH PATTERN.

Publications (1)

Publication Number Publication Date
GB1553181A true GB1553181A (en) 1979-09-19

Family

ID=19827979

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5435/78A Expired GB1553181A (en) 1977-02-15 1978-02-10 Forming electrically insulating layers

Country Status (8)

Country Link
US (1) US4176016A (en)
JP (1) JPS53100785A (en)
CA (1) CA1102922A (en)
DE (1) DE2804602C2 (en)
FR (1) FR2380636B1 (en)
GB (1) GB1553181A (en)
HK (1) HK8880A (en)
NL (1) NL7701559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2173822A (en) * 1985-03-23 1986-10-22 Nippon Telegraph & Telephone Planarizing semiconductor surfaces

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3032708A1 (en) * 1980-08-30 1982-04-29 Philips Patentverwaltung Gmbh, 2000 Hamburg METHOD FOR PRODUCING A THIN-LAYER MAGNETIC FIELD SENSOR
JPS5759355A (en) * 1980-09-26 1982-04-09 Fujitsu Ltd Manufacture of semiconductor device
FR2619457B1 (en) * 1987-08-14 1989-11-17 Commissariat Energie Atomique PROCESS FOR OBTAINING A PATTERN IN PARTICULAR OF FERROMAGNETIC MATERIAL HAVING DIFFERENT SLOPES AND MAGNETIC HEAD COMPRISING SUCH A PATTERN
DE4400032C1 (en) * 1994-01-03 1995-08-31 Gold Star Electronics Semiconductor device with insulating film having trench
US5756397A (en) * 1993-12-28 1998-05-26 Lg Semicon Co., Ltd. Method of fabricating a wiring in a semiconductor device
JP2016219452A (en) * 2015-05-14 2016-12-22 富士通株式会社 Multilayer substrate and manufacturing method for multilayer substrate
CN114080088A (en) * 2020-08-10 2022-02-22 鹏鼎控股(深圳)股份有限公司 Circuit board and preparation method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE758160A (en) * 1969-10-31 1971-04-01 Fairchild Camera Instr Co MULTI-LAYER METAL STRUCTURE AND METHOD FOR MANUFACTURING SUCH A STRUCTURE
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
DE2123630A1 (en) * 1970-05-12 1971-12-02 Texas Instruments Inc Semiconductor with multilayer interconnections - using - successive masking and photo etching
US3700508A (en) * 1970-06-25 1972-10-24 Gen Instrument Corp Fabrication of integrated microcircuit devices
FR2119930B1 (en) * 1970-12-31 1974-08-19 Ibm
US3755123A (en) * 1971-03-30 1973-08-28 Method for sputtering a film on an irregular surface
JPS5217995B2 (en) * 1972-02-18 1977-05-19
US3804738A (en) * 1973-06-29 1974-04-16 Ibm Partial planarization of electrically insulative films by resputtering
US3868723A (en) * 1973-06-29 1975-02-25 Ibm Integrated circuit structure accommodating via holes
US3839111A (en) * 1973-08-20 1974-10-01 Rca Corp Method of etching silicon oxide to produce a tapered edge thereon
US4022930A (en) * 1975-05-30 1977-05-10 Bell Telephone Laboratories, Incorporated Multilevel metallization for integrated circuits

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2173822A (en) * 1985-03-23 1986-10-22 Nippon Telegraph & Telephone Planarizing semiconductor surfaces
US4732761A (en) * 1985-03-23 1988-03-22 Nippon Telegraph And Telephone Corporation Thin film forming apparatus and method
GB2173822B (en) * 1985-03-23 1989-08-09 Nippon Telegraph & Telephone Thin film forming apparatus and method

Also Published As

Publication number Publication date
US4176016A (en) 1979-11-27
JPS53100785A (en) 1978-09-02
CA1102922A (en) 1981-06-09
JPS638613B2 (en) 1988-02-23
HK8880A (en) 1980-03-14
DE2804602A1 (en) 1978-08-17
DE2804602C2 (en) 1985-01-17
FR2380636A1 (en) 1978-09-08
NL7701559A (en) 1978-08-17
FR2380636B1 (en) 1985-06-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee