NL7115760A - - Google Patents

Info

Publication number
NL7115760A
NL7115760A NL7115760A NL7115760A NL7115760A NL 7115760 A NL7115760 A NL 7115760A NL 7115760 A NL7115760 A NL 7115760A NL 7115760 A NL7115760 A NL 7115760A NL 7115760 A NL7115760 A NL 7115760A
Authority
NL
Netherlands
Application number
NL7115760A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7115760A publication Critical patent/NL7115760A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7115760A 1970-12-01 1971-11-16 NL7115760A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702059116 DE2059116C3 (de) 1970-12-01 1970-12-01 Verfahren zur Herstellung eines Halbleiterbauelementes

Publications (1)

Publication Number Publication Date
NL7115760A true NL7115760A (xx) 1972-06-05

Family

ID=5789659

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7115760A NL7115760A (xx) 1970-12-01 1971-11-16

Country Status (7)

Country Link
BE (1) BE775973A (xx)
DE (1) DE2059116C3 (xx)
FR (1) FR2116424A1 (xx)
GB (1) GB1358438A (xx)
IT (1) IT941388B (xx)
LU (1) LU64363A1 (xx)
NL (1) NL7115760A (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284981A1 (fr) * 1974-09-10 1976-04-09 Radiotechnique Compelec Procede d'obtention d'un circuit integre semiconducteur
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
IN157312B (xx) * 1982-01-12 1986-03-01 Rca Corp
US4482422A (en) * 1982-02-26 1984-11-13 Rca Corporation Method for growing a low defect monocrystalline layer on a mask
GB2142185A (en) * 1983-06-22 1985-01-09 Rca Corp Mosfet fabrication method
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4704186A (en) * 1986-02-19 1987-11-03 Rca Corporation Recessed oxide method for making a silicon-on-insulator substrate
AU623863B2 (en) * 1987-08-24 1992-05-28 Canon Kabushiki Kaisha Method of forming crystals
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
TW205603B (xx) * 1990-09-21 1993-05-11 Anelva Corp

Also Published As

Publication number Publication date
FR2116424A1 (xx) 1972-07-13
DE2059116C3 (de) 1974-11-21
LU64363A1 (xx) 1972-06-19
DE2059116B2 (de) 1974-04-25
DE2059116A1 (de) 1972-07-06
IT941388B (it) 1973-03-01
BE775973A (fr) 1972-03-16
GB1358438A (en) 1974-07-03

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