DE2155849C3 - Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen - Google Patents

Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen

Info

Publication number
DE2155849C3
DE2155849C3 DE2155849A DE2155849A DE2155849C3 DE 2155849 C3 DE2155849 C3 DE 2155849C3 DE 2155849 A DE2155849 A DE 2155849A DE 2155849 A DE2155849 A DE 2155849A DE 2155849 C3 DE2155849 C3 DE 2155849C3
Authority
DE
Germany
Prior art keywords
organic substance
organic
semiconductor
molecular oxygen
substances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2155849A
Other languages
German (de)
English (en)
Other versions
DE2155849A1 (de
DE2155849B2 (de
Inventor
Rolf 8501 Wolkersdorf Berkner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE2155849A priority Critical patent/DE2155849C3/de
Priority to CH1258972A priority patent/CH565451A5/xx
Priority to ES407115A priority patent/ES407115A1/es
Priority to SE7214269A priority patent/SE376686B/xx
Priority to US304331A priority patent/US3896254A/en
Priority to FR7239442A priority patent/FR2159344B1/fr
Priority to JP47111722A priority patent/JPS4876475A/ja
Priority to IT31470/72A priority patent/IT970349B/it
Priority to BR7887/72A priority patent/BR7207887D0/pt
Priority to GB5198072A priority patent/GB1408314A/en
Publication of DE2155849A1 publication Critical patent/DE2155849A1/de
Publication of DE2155849B2 publication Critical patent/DE2155849B2/de
Application granted granted Critical
Publication of DE2155849C3 publication Critical patent/DE2155849C3/de
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6509—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6538—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by exposure to UV light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE2155849A 1971-11-10 1971-11-10 Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen Expired DE2155849C3 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE2155849A DE2155849C3 (de) 1971-11-10 1971-11-10 Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
CH1258972A CH565451A5 (enExample) 1971-11-10 1972-08-25
ES407115A ES407115A1 (es) 1971-11-10 1972-09-22 Procedimiento para la produccion de un recubrimiento esta- bilizante yno aislante sobre superficies de semiconductores.
SE7214269A SE376686B (enExample) 1971-11-10 1972-11-03
US304331A US3896254A (en) 1971-11-10 1972-11-07 Coating semiconductor surfaces
FR7239442A FR2159344B1 (enExample) 1971-11-10 1972-11-08
JP47111722A JPS4876475A (enExample) 1971-11-10 1972-11-09
IT31470/72A IT970349B (it) 1971-11-10 1972-11-09 Procedimento per la realizzazione di un rivestimento stabilizzante e o isolante su superfici semicon duttrici
BR7887/72A BR7207887D0 (pt) 1971-11-10 1972-11-10 Processo para a producao de um revestimento estabilizador e/ou isolante em superficies semicondutoras
GB5198072A GB1408314A (en) 1971-11-10 1972-11-10 Method for production of a stabilizing and or insulating coating on semiconductor surfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2155849A DE2155849C3 (de) 1971-11-10 1971-11-10 Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen

Publications (3)

Publication Number Publication Date
DE2155849A1 DE2155849A1 (de) 1973-05-17
DE2155849B2 DE2155849B2 (de) 1978-11-16
DE2155849C3 true DE2155849C3 (de) 1979-07-26

Family

ID=5824722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2155849A Expired DE2155849C3 (de) 1971-11-10 1971-11-10 Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen

Country Status (10)

Country Link
US (1) US3896254A (enExample)
JP (1) JPS4876475A (enExample)
BR (1) BR7207887D0 (enExample)
CH (1) CH565451A5 (enExample)
DE (1) DE2155849C3 (enExample)
ES (1) ES407115A1 (enExample)
FR (1) FR2159344B1 (enExample)
GB (1) GB1408314A (enExample)
IT (1) IT970349B (enExample)
SE (1) SE376686B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210498A (en) * 1974-11-20 1980-07-01 Matsushita Electric Industrial Co., Ltd. Method of increasing the amplification of a transistor through use of organic compounds
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4199649A (en) * 1978-04-12 1980-04-22 Bard Laboratories, Inc. Amorphous monomolecular surface coatings
GB2111037B (en) * 1981-11-23 1984-10-17 Hughes Aircraft Co Preparing substrates for semi-conductors
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
US5389194A (en) * 1993-02-05 1995-02-14 Lsi Logic Corporation Methods of cleaning semiconductor substrates after polishing
DE4432294A1 (de) 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
DE19537545A1 (de) * 1995-10-09 1997-04-10 Telefunken Microelectron Verfahren zur Herstellung einer Lumineszenzdiode
ATE402478T1 (de) * 1998-09-30 2008-08-15 Fujifilm Corp Mit einem methinfarbstoff sensibilisierte halbleiterteilchen
DE19948206A1 (de) * 1999-10-07 2001-04-12 Merck Patent Gmbh Verfahren zur Herstellung hochreiner Salzsäure
JP4375991B2 (ja) * 2003-04-09 2009-12-02 関東化学株式会社 半導体基板洗浄液組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL230243A (enExample) * 1957-08-07
US3188229A (en) * 1961-10-03 1965-06-08 Du Pont Process of adhering an organic coating to a substrate
US3346384A (en) * 1963-04-25 1967-10-10 Gen Electric Metal image formation
US3450017A (en) * 1966-04-15 1969-06-17 Pentacon Dresden Veb Cameras
DE1564580A1 (de) * 1966-04-27 1969-07-31 Semikron Gleichrichterbau Verfahren zur Stabilisierung der Sperreigenschaft von Halbleiterbauelementen
NL6707515A (enExample) * 1967-05-31 1968-12-02
GB1237433A (en) * 1968-06-06 1971-06-30 Standard Telephones Cables Ltd Improvements in or relating to photolithographic masks
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming

Also Published As

Publication number Publication date
DE2155849A1 (de) 1973-05-17
BR7207887D0 (pt) 1973-09-25
JPS4876475A (enExample) 1973-10-15
FR2159344B1 (enExample) 1977-12-23
FR2159344A1 (enExample) 1973-06-22
DE2155849B2 (de) 1978-11-16
SE376686B (enExample) 1975-06-02
ES407115A1 (es) 1975-10-16
GB1408314A (en) 1975-10-01
IT970349B (it) 1974-04-10
US3896254A (en) 1975-07-22
CH565451A5 (enExample) 1975-08-15

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