DE212020000842U1 - Halbleitervorrichtung und Halbleitermodul - Google Patents

Halbleitervorrichtung und Halbleitermodul Download PDF

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DE212020000842U1
DE212020000842U1 DE212020000842.6U DE212020000842U DE212020000842U1 DE 212020000842 U1 DE212020000842 U1 DE 212020000842U1 DE 212020000842 U DE212020000842 U DE 212020000842U DE 212020000842 U1 DE212020000842 U1 DE 212020000842U1
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semiconductor device
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Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
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