DE2116746C3 - Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung - Google Patents
Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer HalbleiterverbindungInfo
- Publication number
- DE2116746C3 DE2116746C3 DE19712116746 DE2116746A DE2116746C3 DE 2116746 C3 DE2116746 C3 DE 2116746C3 DE 19712116746 DE19712116746 DE 19712116746 DE 2116746 A DE2116746 A DE 2116746A DE 2116746 C3 DE2116746 C3 DE 2116746C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- temperature
- precipitation
- carrier
- carrier body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 title claims description 15
- 238000005979 thermal decomposition reaction Methods 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims description 22
- 239000012159 carrier gas Substances 0.000 claims description 19
- 238000001556 precipitation Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 2
- 238000010494 dissociation reaction Methods 0.000 claims description 2
- 230000005593 dissociations Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000005855 radiation Effects 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712116746 DE2116746C3 (de) | 1971-04-06 | 1971-04-06 | Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung |
| BE778746A BE778746A (fr) | 1971-04-06 | 1972-01-31 | Procede d'exploitation d'une installation electrique de precipitation ou de depot pour la fabrication de barreaux semi-conducteurs |
| NL7201633A NL7201633A (Sortimente) | 1971-04-06 | 1972-02-08 | |
| AT219572A AT324429B (de) | 1971-04-06 | 1972-03-15 | Verfahren und vorrichtung zum herstellen von halbleiterstäben durch thermische zersetzung einer halbleiterverbindung |
| GB1222872A GB1378302A (en) | 1971-04-06 | 1972-03-16 | Production of semiconductor rods |
| CA138,416A CA969839A (en) | 1971-04-06 | 1972-03-29 | Semiconductor rod manufacturing method |
| IT2266572A IT950953B (it) | 1971-04-06 | 1972-03-31 | Sistema per l esercizio di un impianto elettrico di deposito servente per fabbricare bacchet te semiconduttrici specie costi tuite da silicio |
| DD16200572A DD100404A5 (Sortimente) | 1971-04-06 | 1972-04-03 | |
| FR7211753A FR2132404B1 (Sortimente) | 1971-04-06 | 1972-04-04 | |
| PL154537A PL73356B2 (Sortimente) | 1972-04-04 | ||
| DK163272A DK142625C (da) | 1971-04-06 | 1972-04-05 | Fremgangsmaade og apparat til fremstilling af halvlederstave ved termisk spaltning af en halvlederforbindelse |
| CS227772A CS169753B2 (Sortimente) | 1971-04-06 | 1972-04-05 | |
| JP3395072A JPS5312358B1 (Sortimente) | 1971-04-06 | 1972-04-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712116746 DE2116746C3 (de) | 1971-04-06 | 1971-04-06 | Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2116746A1 DE2116746A1 (de) | 1972-10-19 |
| DE2116746B2 DE2116746B2 (de) | 1978-04-13 |
| DE2116746C3 true DE2116746C3 (de) | 1978-12-07 |
Family
ID=5804021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712116746 Expired DE2116746C3 (de) | 1971-04-06 | 1971-04-06 | Verfahren zum Herstellen von Halbleiterstäben durch thermische Zersetzung einer Halbleiterverbindung |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5312358B1 (Sortimente) |
| AT (1) | AT324429B (Sortimente) |
| BE (1) | BE778746A (Sortimente) |
| CA (1) | CA969839A (Sortimente) |
| CS (1) | CS169753B2 (Sortimente) |
| DD (1) | DD100404A5 (Sortimente) |
| DE (1) | DE2116746C3 (Sortimente) |
| DK (1) | DK142625C (Sortimente) |
| FR (1) | FR2132404B1 (Sortimente) |
| GB (1) | GB1378302A (Sortimente) |
| IT (1) | IT950953B (Sortimente) |
| NL (1) | NL7201633A (Sortimente) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2609564A1 (de) * | 1976-03-08 | 1977-09-15 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium aus der gasphase |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| CN101224888B (zh) * | 2007-10-23 | 2010-05-19 | 四川永祥多晶硅有限公司 | 多晶硅氢还原炉的硅芯棒加热启动方法 |
| DE102009010086B4 (de) * | 2009-01-29 | 2013-04-11 | Centrotherm Sitec Gmbh | Anordnung und Verfahren zur Messung der Temperatur und des Dickenwachstums von Siliziumstäben in einem Silizium-Abscheidereaktor |
| US20120322175A1 (en) * | 2011-06-14 | 2012-12-20 | Memc Electronic Materials Spa | Methods and Systems For Controlling SiIicon Rod Temperature |
-
1971
- 1971-04-06 DE DE19712116746 patent/DE2116746C3/de not_active Expired
-
1972
- 1972-01-31 BE BE778746A patent/BE778746A/xx unknown
- 1972-02-08 NL NL7201633A patent/NL7201633A/xx unknown
- 1972-03-15 AT AT219572A patent/AT324429B/de not_active IP Right Cessation
- 1972-03-16 GB GB1222872A patent/GB1378302A/en not_active Expired
- 1972-03-29 CA CA138,416A patent/CA969839A/en not_active Expired
- 1972-03-31 IT IT2266572A patent/IT950953B/it active
- 1972-04-03 DD DD16200572A patent/DD100404A5/xx unknown
- 1972-04-04 FR FR7211753A patent/FR2132404B1/fr not_active Expired
- 1972-04-05 DK DK163272A patent/DK142625C/da not_active IP Right Cessation
- 1972-04-05 CS CS227772A patent/CS169753B2/cs unknown
- 1972-04-06 JP JP3395072A patent/JPS5312358B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2132404B1 (Sortimente) | 1974-08-02 |
| FR2132404A1 (Sortimente) | 1972-11-17 |
| NL7201633A (Sortimente) | 1972-10-10 |
| CS169753B2 (Sortimente) | 1976-07-29 |
| GB1378302A (en) | 1974-12-27 |
| PL73356B1 (Sortimente) | 1974-08-30 |
| DE2116746A1 (de) | 1972-10-19 |
| DK142625B (da) | 1980-12-01 |
| DD100404A5 (Sortimente) | 1973-09-20 |
| CA969839A (en) | 1975-06-24 |
| IT950953B (it) | 1973-06-20 |
| AT324429B (de) | 1975-08-25 |
| BE778746A (fr) | 1972-05-16 |
| DK142625C (da) | 1981-08-03 |
| DE2116746B2 (de) | 1978-04-13 |
| JPS5312358B1 (Sortimente) | 1978-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |