DE2107671A1 - Halbleiterbauelement und Verfahren zu seiner Herstellung - Google Patents
Halbleiterbauelement und Verfahren zu seiner HerstellungInfo
- Publication number
- DE2107671A1 DE2107671A1 DE19712107671 DE2107671A DE2107671A1 DE 2107671 A1 DE2107671 A1 DE 2107671A1 DE 19712107671 DE19712107671 DE 19712107671 DE 2107671 A DE2107671 A DE 2107671A DE 2107671 A1 DE2107671 A1 DE 2107671A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- disc
- junction
- dopant
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 15
- 239000002019 doping agent Substances 0.000 claims description 38
- 238000009792 diffusion process Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 10
- 238000005530 etching Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1360570A | 1970-02-24 | 1970-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2107671A1 true DE2107671A1 (de) | 1971-09-09 |
Family
ID=21760804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712107671 Pending DE2107671A1 (de) | 1970-02-24 | 1971-02-17 | Halbleiterbauelement und Verfahren zu seiner Herstellung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3664894A (OSRAM) |
| JP (1) | JPS5128388B1 (OSRAM) |
| BE (1) | BE763330A (OSRAM) |
| DE (1) | DE2107671A1 (OSRAM) |
| FR (1) | FR2080712B1 (OSRAM) |
| GB (1) | GB1287247A (OSRAM) |
| NL (1) | NL7102378A (OSRAM) |
| SE (1) | SE372658B (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3885243A (en) * | 1971-06-25 | 1975-05-20 | Bbc Brown Boveri & Cie | Semiconductor device |
| US4046605A (en) * | 1974-01-14 | 1977-09-06 | National Semiconductor Corporation | Method of electrically isolating individual semiconductor circuits in a wafer |
| GB1536545A (en) * | 1975-03-26 | 1978-12-20 | Mullard Ltd | Semiconductor device manufacture |
| JPS5244173A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Method of flat etching of silicon substrate |
| US4040877A (en) * | 1976-08-24 | 1977-08-09 | Westinghouse Electric Corporation | Method of making a transistor device |
| US6750091B1 (en) * | 1996-03-01 | 2004-06-15 | Micron Technology | Diode formation method |
| WO2015019540A1 (ja) * | 2013-08-08 | 2015-02-12 | シャープ株式会社 | 半導体素子基板およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1054331A (OSRAM) * | 1963-05-16 | |||
| DE1229650B (de) * | 1963-09-30 | 1966-12-01 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik |
| US3365794A (en) * | 1964-05-15 | 1968-01-30 | Transitron Electronic Corp | Semiconducting device |
| US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
| US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
| US3440114A (en) * | 1966-10-31 | 1969-04-22 | Texas Instruments Inc | Selective gold doping for high resistivity regions in silicon |
| GB1156777A (en) * | 1967-06-28 | 1969-07-02 | Westinghouse Brake & Signal | Manufacture of Semiconductor Elements. |
-
1970
- 1970-02-24 US US13605A patent/US3664894A/en not_active Expired - Lifetime
- 1970-12-23 JP JP45118513A patent/JPS5128388B1/ja active Pending
-
1971
- 1971-02-08 FR FR7104101A patent/FR2080712B1/fr not_active Expired
- 1971-02-17 DE DE19712107671 patent/DE2107671A1/de active Pending
- 1971-02-23 SE SE7102288A patent/SE372658B/xx unknown
- 1971-02-23 BE BE763330A patent/BE763330A/xx unknown
- 1971-02-23 NL NL7102378A patent/NL7102378A/xx unknown
- 1971-04-19 GB GB22088/71A patent/GB1287247A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2080712B1 (OSRAM) | 1977-01-21 |
| BE763330A (fr) | 1971-07-16 |
| US3664894A (en) | 1972-05-23 |
| FR2080712A1 (OSRAM) | 1971-11-19 |
| GB1287247A (en) | 1972-08-31 |
| SE372658B (OSRAM) | 1974-12-23 |
| NL7102378A (OSRAM) | 1971-08-26 |
| JPS5128388B1 (OSRAM) | 1976-08-18 |
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