BE763330A - Dispositif a semiconducteur a grande-tension electrique de claquage a la jonction et son procede de fabrication - Google Patents

Dispositif a semiconducteur a grande-tension electrique de claquage a la jonction et son procede de fabrication

Info

Publication number
BE763330A
BE763330A BE763330A BE763330A BE763330A BE 763330 A BE763330 A BE 763330A BE 763330 A BE763330 A BE 763330A BE 763330 A BE763330 A BE 763330A BE 763330 A BE763330 A BE 763330A
Authority
BE
Belgium
Prior art keywords
breakdown
junction
semiconductor device
manufacturing process
voltage semiconductor
Prior art date
Application number
BE763330A
Other languages
English (en)
French (fr)
Inventor
W G Einthoven
H K Donnell
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of BE763330A publication Critical patent/BE763330A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
BE763330A 1970-02-24 1971-02-23 Dispositif a semiconducteur a grande-tension electrique de claquage a la jonction et son procede de fabrication BE763330A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1360570A 1970-02-24 1970-02-24

Publications (1)

Publication Number Publication Date
BE763330A true BE763330A (fr) 1971-07-16

Family

ID=21760804

Family Applications (1)

Application Number Title Priority Date Filing Date
BE763330A BE763330A (fr) 1970-02-24 1971-02-23 Dispositif a semiconducteur a grande-tension electrique de claquage a la jonction et son procede de fabrication

Country Status (8)

Country Link
US (1) US3664894A (OSRAM)
JP (1) JPS5128388B1 (OSRAM)
BE (1) BE763330A (OSRAM)
DE (1) DE2107671A1 (OSRAM)
FR (1) FR2080712B1 (OSRAM)
GB (1) GB1287247A (OSRAM)
NL (1) NL7102378A (OSRAM)
SE (1) SE372658B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885243A (en) * 1971-06-25 1975-05-20 Bbc Brown Boveri & Cie Semiconductor device
US4046605A (en) * 1974-01-14 1977-09-06 National Semiconductor Corporation Method of electrically isolating individual semiconductor circuits in a wafer
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate
US4040877A (en) * 1976-08-24 1977-08-09 Westinghouse Electric Corporation Method of making a transistor device
US6750091B1 (en) * 1996-03-01 2004-06-15 Micron Technology Diode formation method
WO2015019540A1 (ja) * 2013-08-08 2015-02-12 シャープ株式会社 半導体素子基板およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054331A (OSRAM) * 1963-05-16
DE1229650B (de) * 1963-09-30 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik
US3365794A (en) * 1964-05-15 1968-01-30 Transitron Electronic Corp Semiconducting device
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3458781A (en) * 1966-07-18 1969-07-29 Unitrode Corp High-voltage planar semiconductor devices
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
GB1156777A (en) * 1967-06-28 1969-07-02 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.

Also Published As

Publication number Publication date
FR2080712B1 (OSRAM) 1977-01-21
US3664894A (en) 1972-05-23
FR2080712A1 (OSRAM) 1971-11-19
DE2107671A1 (de) 1971-09-09
GB1287247A (en) 1972-08-31
SE372658B (OSRAM) 1974-12-23
NL7102378A (OSRAM) 1971-08-26
JPS5128388B1 (OSRAM) 1976-08-18

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