FR2080712B1 - - Google Patents

Info

Publication number
FR2080712B1
FR2080712B1 FR7104101A FR7104101A FR2080712B1 FR 2080712 B1 FR2080712 B1 FR 2080712B1 FR 7104101 A FR7104101 A FR 7104101A FR 7104101 A FR7104101 A FR 7104101A FR 2080712 B1 FR2080712 B1 FR 2080712B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7104101A
Other languages
French (fr)
Other versions
FR2080712A1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2080712A1 publication Critical patent/FR2080712A1/fr
Application granted granted Critical
Publication of FR2080712B1 publication Critical patent/FR2080712B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/028Dicing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/151Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
FR7104101A 1970-02-24 1971-02-08 Expired FR2080712B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1360570A 1970-02-24 1970-02-24

Publications (2)

Publication Number Publication Date
FR2080712A1 FR2080712A1 (OSRAM) 1971-11-19
FR2080712B1 true FR2080712B1 (OSRAM) 1977-01-21

Family

ID=21760804

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7104101A Expired FR2080712B1 (OSRAM) 1970-02-24 1971-02-08

Country Status (8)

Country Link
US (1) US3664894A (OSRAM)
JP (1) JPS5128388B1 (OSRAM)
BE (1) BE763330A (OSRAM)
DE (1) DE2107671A1 (OSRAM)
FR (1) FR2080712B1 (OSRAM)
GB (1) GB1287247A (OSRAM)
NL (1) NL7102378A (OSRAM)
SE (1) SE372658B (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3885243A (en) * 1971-06-25 1975-05-20 Bbc Brown Boveri & Cie Semiconductor device
US4046605A (en) * 1974-01-14 1977-09-06 National Semiconductor Corporation Method of electrically isolating individual semiconductor circuits in a wafer
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
JPS5244173A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Method of flat etching of silicon substrate
US4040877A (en) * 1976-08-24 1977-08-09 Westinghouse Electric Corporation Method of making a transistor device
US6750091B1 (en) * 1996-03-01 2004-06-15 Micron Technology Diode formation method
US20160148875A1 (en) * 2013-08-08 2016-05-26 Sharp Kabushiki Kaisha Semiconductor element substrate, and method for producing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1054331A (OSRAM) * 1963-05-16
DE1229650B (de) * 1963-09-30 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik
US3365794A (en) * 1964-05-15 1968-01-30 Transitron Electronic Corp Semiconducting device
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3458781A (en) * 1966-07-18 1969-07-29 Unitrode Corp High-voltage planar semiconductor devices
US3440114A (en) * 1966-10-31 1969-04-22 Texas Instruments Inc Selective gold doping for high resistivity regions in silicon
GB1156777A (en) * 1967-06-28 1969-07-02 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.

Also Published As

Publication number Publication date
BE763330A (fr) 1971-07-16
SE372658B (OSRAM) 1974-12-23
DE2107671A1 (de) 1971-09-09
GB1287247A (en) 1972-08-31
JPS5128388B1 (OSRAM) 1976-08-18
FR2080712A1 (OSRAM) 1971-11-19
NL7102378A (OSRAM) 1971-08-26
US3664894A (en) 1972-05-23

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Legal Events

Date Code Title Description
ST Notification of lapse