DE2043298A1 - Halbleiteranordnung mit einem Feld effekttransistor - Google Patents

Halbleiteranordnung mit einem Feld effekttransistor

Info

Publication number
DE2043298A1
DE2043298A1 DE19702043298 DE2043298A DE2043298A1 DE 2043298 A1 DE2043298 A1 DE 2043298A1 DE 19702043298 DE19702043298 DE 19702043298 DE 2043298 A DE2043298 A DE 2043298A DE 2043298 A1 DE2043298 A1 DE 2043298A1
Authority
DE
Germany
Prior art keywords
layer
substrate
contact
substrate area
mentioned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19702043298
Other languages
German (de)
English (en)
Inventor
Rijkent Jan Eindhoven Nienhuis (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2043298A1 publication Critical patent/DE2043298A1/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
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    • H01L2224/484Connecting portions
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • HELECTRICITY
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
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    • H01L2924/11Device type
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    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19702043298 1969-09-12 1970-09-01 Halbleiteranordnung mit einem Feld effekttransistor Ceased DE2043298A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6913958.A NL160682C (nl) 1969-09-12 1969-09-12 Veldeffecttransistor met geisoleerde stuurelektrode in omhulling.

Publications (1)

Publication Number Publication Date
DE2043298A1 true DE2043298A1 (de) 1971-03-18

Family

ID=19807901

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702043298 Ceased DE2043298A1 (de) 1969-09-12 1970-09-01 Halbleiteranordnung mit einem Feld effekttransistor

Country Status (8)

Country Link
AT (1) AT336081B (enrdf_load_stackoverflow)
BE (1) BE756002A (enrdf_load_stackoverflow)
CH (1) CH506888A (enrdf_load_stackoverflow)
DE (1) DE2043298A1 (enrdf_load_stackoverflow)
FR (1) FR2061685B1 (enrdf_load_stackoverflow)
GB (1) GB1322511A (enrdf_load_stackoverflow)
NL (1) NL160682C (enrdf_load_stackoverflow)
SE (1) SE363542B (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor

Also Published As

Publication number Publication date
NL160682C (nl) 1979-11-15
ATA817070A (de) 1976-08-15
NL6913958A (enrdf_load_stackoverflow) 1971-03-16
FR2061685B1 (enrdf_load_stackoverflow) 1974-03-22
BE756002A (fr) 1971-03-10
CH506888A (de) 1971-04-30
GB1322511A (en) 1973-07-04
SE363542B (enrdf_load_stackoverflow) 1974-01-21
FR2061685A1 (enrdf_load_stackoverflow) 1971-06-25
AT336081B (de) 1977-04-12

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