BE756002A - Dispositif semi-conducteur comportant un transistor a effet de champ - Google Patents

Dispositif semi-conducteur comportant un transistor a effet de champ

Info

Publication number
BE756002A
BE756002A BE756002DA BE756002A BE 756002 A BE756002 A BE 756002A BE 756002D A BE756002D A BE 756002DA BE 756002 A BE756002 A BE 756002A
Authority
BE
Belgium
Prior art keywords
field
semiconductor device
device including
effect transistor
transistor
Prior art date
Application number
Other languages
English (en)
French (fr)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE756002A publication Critical patent/BE756002A/xx

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Classifications

    • HELECTRICITY
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/4805Shape
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    • H01L2224/48095Kinked
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    • H01L2224/484Connecting portions
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    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48699Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2924/1306Field-effect transistor [FET]
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    • H01L2924/1306Field-effect transistor [FET]
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    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
BE756002D 1969-09-12 Dispositif semi-conducteur comportant un transistor a effet de champ BE756002A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6913958.A NL160682C (nl) 1969-09-12 1969-09-12 Veldeffecttransistor met geisoleerde stuurelektrode in omhulling.

Publications (1)

Publication Number Publication Date
BE756002A true BE756002A (fr) 1971-03-10

Family

ID=19807901

Family Applications (1)

Application Number Title Priority Date Filing Date
BE756002D BE756002A (fr) 1969-09-12 Dispositif semi-conducteur comportant un transistor a effet de champ

Country Status (8)

Country Link
AT (1) AT336081B (enrdf_load_stackoverflow)
BE (1) BE756002A (enrdf_load_stackoverflow)
CH (1) CH506888A (enrdf_load_stackoverflow)
DE (1) DE2043298A1 (enrdf_load_stackoverflow)
FR (1) FR2061685B1 (enrdf_load_stackoverflow)
GB (1) GB1322511A (enrdf_load_stackoverflow)
NL (1) NL160682C (enrdf_load_stackoverflow)
SE (1) SE363542B (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356858A (en) * 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor

Also Published As

Publication number Publication date
NL160682C (nl) 1979-11-15
DE2043298A1 (de) 1971-03-18
ATA817070A (de) 1976-08-15
NL6913958A (enrdf_load_stackoverflow) 1971-03-16
FR2061685B1 (enrdf_load_stackoverflow) 1974-03-22
CH506888A (de) 1971-04-30
GB1322511A (en) 1973-07-04
SE363542B (enrdf_load_stackoverflow) 1974-01-21
FR2061685A1 (enrdf_load_stackoverflow) 1971-06-25
AT336081B (de) 1977-04-12

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: N.V. PHILIPS GLOEILAMPENFABRIEKEN

Effective date: 19850930