BE756002A - Dispositif semi-conducteur comportant un transistor a effet de champ - Google Patents
Dispositif semi-conducteur comportant un transistor a effet de champInfo
- Publication number
- BE756002A BE756002A BE756002DA BE756002A BE 756002 A BE756002 A BE 756002A BE 756002D A BE756002D A BE 756002DA BE 756002 A BE756002 A BE 756002A
- Authority
- BE
- Belgium
- Prior art keywords
- field
- semiconductor device
- device including
- effect transistor
- transistor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6913958.A NL160682C (nl) | 1969-09-12 | 1969-09-12 | Veldeffecttransistor met geisoleerde stuurelektrode in omhulling. |
Publications (1)
Publication Number | Publication Date |
---|---|
BE756002A true BE756002A (fr) | 1971-03-10 |
Family
ID=19807901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE756002D BE756002A (fr) | 1969-09-12 | Dispositif semi-conducteur comportant un transistor a effet de champ |
Country Status (8)
Country | Link |
---|---|
AT (1) | AT336081B (enrdf_load_stackoverflow) |
BE (1) | BE756002A (enrdf_load_stackoverflow) |
CH (1) | CH506888A (enrdf_load_stackoverflow) |
DE (1) | DE2043298A1 (enrdf_load_stackoverflow) |
FR (1) | FR2061685B1 (enrdf_load_stackoverflow) |
GB (1) | GB1322511A (enrdf_load_stackoverflow) |
NL (1) | NL160682C (enrdf_load_stackoverflow) |
SE (1) | SE363542B (enrdf_load_stackoverflow) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
-
0
- BE BE756002D patent/BE756002A/xx not_active IP Right Cessation
-
1969
- 1969-09-12 NL NL6913958.A patent/NL160682C/xx active
-
1970
- 1970-09-01 DE DE19702043298 patent/DE2043298A1/de not_active Ceased
- 1970-09-09 AT AT817070A patent/AT336081B/de active
- 1970-09-09 GB GB4314970A patent/GB1322511A/en not_active Expired
- 1970-09-09 SE SE12274/70A patent/SE363542B/xx unknown
- 1970-09-09 CH CH1344370A patent/CH506888A/de not_active IP Right Cessation
- 1970-09-10 FR FR7032896A patent/FR2061685B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL160682C (nl) | 1979-11-15 |
DE2043298A1 (de) | 1971-03-18 |
ATA817070A (de) | 1976-08-15 |
NL6913958A (enrdf_load_stackoverflow) | 1971-03-16 |
FR2061685B1 (enrdf_load_stackoverflow) | 1974-03-22 |
CH506888A (de) | 1971-04-30 |
GB1322511A (en) | 1973-07-04 |
SE363542B (enrdf_load_stackoverflow) | 1974-01-21 |
FR2061685A1 (enrdf_load_stackoverflow) | 1971-06-25 |
AT336081B (de) | 1977-04-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RE | Patent lapsed |
Owner name: N.V. PHILIPS GLOEILAMPENFABRIEKEN Effective date: 19850930 |