DE2014155A1 - Verfahren zur Herstellung einer Halb leiterstruktur sowie nach diesem Verfahren hergestellte Halbleiterstruktur - Google Patents
Verfahren zur Herstellung einer Halb leiterstruktur sowie nach diesem Verfahren hergestellte HalbleiterstrukturInfo
- Publication number
- DE2014155A1 DE2014155A1 DE19702014155 DE2014155A DE2014155A1 DE 2014155 A1 DE2014155 A1 DE 2014155A1 DE 19702014155 DE19702014155 DE 19702014155 DE 2014155 A DE2014155 A DE 2014155A DE 2014155 A1 DE2014155 A1 DE 2014155A1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- layer
- zone
- semiconductor body
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 238000000034 method Methods 0.000 title claims description 31
- 239000010410 layer Substances 0.000 claims description 90
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 29
- 239000007789 gas Substances 0.000 description 14
- 238000001465 metallisation Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- -1 boron ions Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001605 fetal effect Effects 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81310569A | 1969-04-03 | 1969-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2014155A1 true DE2014155A1 (de) | 1971-04-15 |
Family
ID=25211462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702014155 Pending DE2014155A1 (de) | 1969-04-03 | 1970-03-24 | Verfahren zur Herstellung einer Halb leiterstruktur sowie nach diesem Verfahren hergestellte Halbleiterstruktur |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS505915B1 (enrdf_load_stackoverflow) |
| BE (1) | BE748240A (enrdf_load_stackoverflow) |
| DE (1) | DE2014155A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2038223B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1300727A (enrdf_load_stackoverflow) |
| NL (1) | NL7004130A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2729171A1 (de) * | 1976-06-28 | 1977-12-29 | Motorola Inc | Verfahren zur herstellung von integrierten schaltungen |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
-
1970
- 1970-03-23 NL NL7004130A patent/NL7004130A/xx unknown
- 1970-03-23 GB GB1390470A patent/GB1300727A/en not_active Expired
- 1970-03-24 DE DE19702014155 patent/DE2014155A1/de active Pending
- 1970-03-31 BE BE748240D patent/BE748240A/xx unknown
- 1970-03-31 JP JP45026915A patent/JPS505915B1/ja active Pending
- 1970-04-02 FR FR7011998A patent/FR2038223B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2729171A1 (de) * | 1976-06-28 | 1977-12-29 | Motorola Inc | Verfahren zur herstellung von integrierten schaltungen |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS505915B1 (enrdf_load_stackoverflow) | 1975-03-08 |
| FR2038223A1 (enrdf_load_stackoverflow) | 1971-01-08 |
| GB1300727A (en) | 1972-12-20 |
| NL7004130A (enrdf_load_stackoverflow) | 1970-10-06 |
| BE748240A (fr) | 1970-09-30 |
| FR2038223B1 (enrdf_load_stackoverflow) | 1977-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0001550B1 (de) | Integrierte Halbleiteranordnung für eine Bauelementstruktur mit kleinen Abmessungen und zugehöriges Herstellungsvefahren | |
| DE2618445C2 (de) | Verfahren zum Herstellen eines bipolaren Transistors | |
| DE2615754C2 (enrdf_load_stackoverflow) | ||
| EP0001574B1 (de) | Halbleiteranordnung für Widerstandsstrukturen in hochintegrierten Schaltkreisen und Verfahren zur Herstellung dieser Halbleiteranordnung | |
| DE2707693C3 (de) | Verfahren zum Herstellen von dotierten Zonen einer bestimmten Leitungsart in einem Halbleitersubstrat mittels Ionenimplantation | |
| DE2744059A1 (de) | Verfahren zur gemeinsamen integrierten herstellung von feldeffekt- und bipolar-transistoren | |
| DE2521568A1 (de) | Verfahren zum herstellen von integrierten halbleiterbauelementen | |
| EP0010633A1 (de) | Verfahren zur Herstellung sehr schmaler Dosierungsgebiete in einem Halbleiterkörper sowie Verwendung dieses Verfahrens bei der Erzeugung von voneinander isolierten Halbleiterkörperbereichen, Bipolar-Halbleiteranordnungen, integrieten Injektionslogikschaltungen und doppelt diffundierten FET-Halbleiteranordnungen | |
| DE7233274U (de) | Polykristalline siliciumelektrode fuer halbleiteranordnungen | |
| EP0025854A1 (de) | Verfahren zum Herstellen von bipolaren Transistoren | |
| DE2019655C2 (de) | Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers | |
| DE3242736A1 (de) | Verfahren zum herstellen feldgesteuerter elemente mit in vertikalen kanaelen versenkten gittern, einschliesslich feldeffekt-transistoren und feldgesteuerten thyristoren | |
| DE2813673A1 (de) | Verfahren zur herstellung einer halbleiteranordnung | |
| DE2449012A1 (de) | Verfahren zur herstellung von dielektrisch isolierten halbleiterbereichen | |
| DE2633714C2 (de) | Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung | |
| DE2640981C2 (de) | Verfahren zur Herstellung von Halbleiteranordnungen durch Ionenimplantation | |
| DE2615438A1 (de) | Verfahren zur herstellung von schaltungskomponenten integrierter schaltungen in einem siliziumsubstrat | |
| DE2617293C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
| DE2718449A1 (de) | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung | |
| DE4240205A1 (en) | High breakdown voltage device esp. bipolar transistor - has low impurity concn. link layer between base and external base layers | |
| DE1814747C2 (de) | Verfahren zum Herstellen von Feldefekttransistoren | |
| DE2616857A1 (de) | Verfahren zur herstellung von halbleiterbauelementen | |
| DE2738961A1 (de) | Verfahren zur herstellung einer integrierten halbleiterschaltung mit luftisolation | |
| DE2111633A1 (de) | Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors | |
| DE2752335A1 (de) | Verfahren zur herstellung eines sperrschicht-feldeffekttransistors |