GB1300727A - Shallow junction semiconductor device and method for making same - Google Patents
Shallow junction semiconductor device and method for making sameInfo
- Publication number
- GB1300727A GB1300727A GB1390470A GB1390470A GB1300727A GB 1300727 A GB1300727 A GB 1300727A GB 1390470 A GB1390470 A GB 1390470A GB 1390470 A GB1390470 A GB 1390470A GB 1300727 A GB1300727 A GB 1300727A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- etched
- oxide
- deposited
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 229910000077 silane Inorganic materials 0.000 abstract 2
- 239000005368 silicate glass Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- -1 boron ion Chemical class 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81310569A | 1969-04-03 | 1969-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1300727A true GB1300727A (en) | 1972-12-20 |
Family
ID=25211462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1390470A Expired GB1300727A (en) | 1969-04-03 | 1970-03-23 | Shallow junction semiconductor device and method for making same |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS505915B1 (enrdf_load_stackoverflow) |
| BE (1) | BE748240A (enrdf_load_stackoverflow) |
| DE (1) | DE2014155A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2038223B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1300727A (enrdf_load_stackoverflow) |
| NL (1) | NL7004130A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| FR1520515A (fr) * | 1967-02-07 | 1968-04-12 | Radiotechnique Coprim Rtc | Circuits intégrés comportant des transistors de types opposés et leurs procédésde fabrication |
-
1970
- 1970-03-23 NL NL7004130A patent/NL7004130A/xx unknown
- 1970-03-23 GB GB1390470A patent/GB1300727A/en not_active Expired
- 1970-03-24 DE DE19702014155 patent/DE2014155A1/de active Pending
- 1970-03-31 BE BE748240D patent/BE748240A/xx unknown
- 1970-03-31 JP JP45026915A patent/JPS505915B1/ja active Pending
- 1970-04-02 FR FR7011998A patent/FR2038223B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2038223B1 (enrdf_load_stackoverflow) | 1977-03-18 |
| FR2038223A1 (enrdf_load_stackoverflow) | 1971-01-08 |
| JPS505915B1 (enrdf_load_stackoverflow) | 1975-03-08 |
| DE2014155A1 (de) | 1971-04-15 |
| BE748240A (fr) | 1970-09-30 |
| NL7004130A (enrdf_load_stackoverflow) | 1970-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0004298B1 (en) | Method of fabricating isolation of and contact to burried layers of semiconductor structures | |
| US3664896A (en) | Deposited silicon diffusion sources | |
| US3861968A (en) | Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition | |
| GB1393123A (en) | Semiconductor device manufacture | |
| GB1421212A (en) | Semiconductor device manufacture | |
| JPS5467778A (en) | Production of semiconductor device | |
| GB1283133A (en) | Method of manufacturing semiconductor devices | |
| GB1226899A (enrdf_load_stackoverflow) | ||
| US3394037A (en) | Method of making a semiconductor device by masking and diffusion | |
| GB1332931A (en) | Methods of manufacturing a semiconductor device | |
| US3926694A (en) | Double diffused metal oxide semiconductor structure with isolated source and drain and method | |
| GB1310412A (en) | Semiconductor devices | |
| GB1366892A (en) | Methods of making semiconductor devices | |
| GB1296562A (enrdf_load_stackoverflow) | ||
| GB1300727A (en) | Shallow junction semiconductor device and method for making same | |
| GB1285917A (en) | Semiconductor device fabrication | |
| JPS5627965A (en) | Manufacture of semiconductor device | |
| IE33385B1 (en) | Semiconductor device and fabrication of same | |
| GB1260026A (en) | A method of manufacturing a semiconductor photo-sensitive device | |
| GB1277138A (en) | High power avalanche diode and methods of making the same | |
| US5091323A (en) | Process for the fabrication of bipolar device | |
| US3959810A (en) | Method for manufacturing a semiconductor device and the same | |
| GB1250584A (enrdf_load_stackoverflow) | ||
| JPS6415973A (en) | Semiconductor device and manufacture thereof | |
| JPS54158889A (en) | Manufacture of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |