DE19981067T1 - Mehrsäulen-Elektronenstrahl-Lithographie-System - Google Patents

Mehrsäulen-Elektronenstrahl-Lithographie-System

Info

Publication number
DE19981067T1
DE19981067T1 DE19981067T DE19981067T DE19981067T1 DE 19981067 T1 DE19981067 T1 DE 19981067T1 DE 19981067 T DE19981067 T DE 19981067T DE 19981067 T DE19981067 T DE 19981067T DE 19981067 T1 DE19981067 T1 DE 19981067T1
Authority
DE
Germany
Prior art keywords
electron beam
lithography system
beam lithography
column electron
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19981067T
Other languages
English (en)
Inventor
Hiroshi Yasuda
Hideaki Komami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Publication of DE19981067T1 publication Critical patent/DE19981067T1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30433—System calibration
    • H01J2237/3045—Deflection calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE19981067T 1998-05-11 1999-05-11 Mehrsäulen-Elektronenstrahl-Lithographie-System Withdrawn DE19981067T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10127737A JPH11329322A (ja) 1998-05-11 1998-05-11 電子ビーム露光方法及び電子ビーム露光装置
PCT/JP1999/002431 WO1999059183A1 (fr) 1998-05-11 1999-05-11 Procede et appareil d'exposition a un faisceau electronique

Publications (1)

Publication Number Publication Date
DE19981067T1 true DE19981067T1 (de) 2000-08-03

Family

ID=14967443

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19981067T Withdrawn DE19981067T1 (de) 1998-05-11 1999-05-11 Mehrsäulen-Elektronenstrahl-Lithographie-System

Country Status (6)

Country Link
US (1) US6218060B1 (de)
JP (1) JPH11329322A (de)
KR (1) KR100327009B1 (de)
DE (1) DE19981067T1 (de)
TW (1) TW459164B (de)
WO (1) WO1999059183A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3982913B2 (ja) * 1998-07-17 2007-09-26 株式会社アドバンテスト 荷電粒子ビーム露光装置
EP1171901B1 (de) * 2000-02-09 2008-10-08 Fei Company Mehrfachsäulen für fokussierte ionenstrahlen (fib) zur anwendung in der herstellung von nanostrukturen
JP4434440B2 (ja) * 2000-06-19 2010-03-17 Ｎｅｃエレクトロニクス株式会社 電子線露光用マスクの検査方法および電子線露光方法
US6555874B1 (en) * 2000-08-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate
JP4601146B2 (ja) * 2000-10-03 2010-12-22 株式会社アドバンテスト 電子ビーム露光装置
US6797953B2 (en) * 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
JP3940310B2 (ja) 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP4421836B2 (ja) * 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
DE602005016256D1 (de) * 2004-05-17 2009-10-08 Mapper Lithography Ip Bv Belichtungssystem mit einem geladenen teilchenstrahl
JPWO2006104139A1 (ja) * 2005-03-29 2008-09-11 株式会社アドバンテスト マルチコラム型電子ビーム露光装置
JP5368086B2 (ja) 2007-03-26 2013-12-18 株式会社アドバンテスト マルチコラム電子ビーム露光装置及びマルチコラム電子ビーム露光方法
JP5020745B2 (ja) 2007-08-29 2012-09-05 株式会社ニューフレアテクノロジー 描画データの作成方法及び荷電粒子ビーム描画装置
JP4856250B2 (ja) 2007-11-20 2012-01-18 株式会社アドバンテスト Ｄ／ａ変換器及び電子ビーム露光装置
JP5386544B2 (ja) * 2011-06-07 2014-01-15 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光方法
JP6230295B2 (ja) 2013-06-26 2017-11-15 キヤノン株式会社 描画装置及び物品の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764932A (en) * 1980-10-07 1982-04-20 Mitsubishi Electric Corp Electron bean exposure device
JPS60262419A (ja) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd パタ−ン形成装置およびそれを用いた半導体装置の製造方法
JPS62147725A (ja) * 1985-12-23 1987-07-01 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
JP2512184B2 (ja) * 1990-01-31 1996-07-03 株式会社日立製作所 荷電粒子線描画装置及び描画方法
JPH05206017A (ja) * 1991-08-09 1993-08-13 Internatl Business Mach Corp <Ibm> リソグラフイ露光システム及びその方法
JP3121098B2 (ja) * 1992-03-17 2000-12-25 富士通株式会社 荷電粒子ビーム露光の方法と装置
JPH07263301A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd ブランキングアパーチャアレイ方式電子ビーム露光装置
JP3372356B2 (ja) * 1994-07-29 2003-02-04 株式会社日立製作所 電子ビーム偏向方法及び電子ビーム描画装置
JP3298347B2 (ja) 1995-01-11 2002-07-02 株式会社日立製作所 電子線描画装置
JP2871627B2 (ja) * 1996-10-17 1999-03-17 日本電気株式会社 電子線露光方法及びその装置

Also Published As

Publication number Publication date
KR20010014411A (ko) 2001-02-26
KR100327009B1 (ko) 2002-03-06
US6218060B1 (en) 2001-04-17
WO1999059183A1 (fr) 1999-11-18
TW459164B (en) 2001-10-11
JPH11329322A (ja) 1999-11-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8607 Notification of search results after publication
8139 Disposal/non-payment of the annual fee