JPS5764932A - Electron bean exposure device - Google Patents

Electron bean exposure device

Info

Publication number
JPS5764932A
JPS5764932A JP14074080A JP14074080A JPS5764932A JP S5764932 A JPS5764932 A JP S5764932A JP 14074080 A JP14074080 A JP 14074080A JP 14074080 A JP14074080 A JP 14074080A JP S5764932 A JPS5764932 A JP S5764932A
Authority
JP
Japan
Prior art keywords
electron beams
patterns
wafer
electron
efficiency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14074080A
Other languages
Japanese (ja)
Inventor
Hirozo Takano
Shinichi Sato
Hayaaki Fukumoto
Hideo Kotani
Kouji Harada
Shinpei Kayano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14074080A priority Critical patent/JPS5764932A/en
Publication of JPS5764932A publication Critical patent/JPS5764932A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Abstract

PURPOSE:To improve the microminiature pattern drawing efficiency of a super LSI or the like by providing a plurality of electron guns, controlling a plurality of emitted electron beams by one control system and simultaneously drawing a plurality of patterns of the same size, configuration and disposition. CONSTITUTION:Stabilized high voltage is applied, for example, from a power source 1 to two electron guns 9a, 9b to simultaneously emit two high speed electron beams 10a, 10b. The electron beams 10a, 10b pass through lenses 4, 5, are thus converged to extremely small diameter are simultaneously deflected and scanned by a scanning coil, and two patterns are simultaneously drawn on the main surface of a wafer 7. After they are simultaneously drawn completely, a stage for supporting the wafer 7 is moved at the prescribed pitch, is sequentially scanned on undrawn region, and patterns are formed. In this manner, the drawing time of large bore wafer can be shortened, thereby enhancing the efficiency of forming the pattern with the electron beams.
JP14074080A 1980-10-07 1980-10-07 Electron bean exposure device Pending JPS5764932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14074080A JPS5764932A (en) 1980-10-07 1980-10-07 Electron bean exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14074080A JPS5764932A (en) 1980-10-07 1980-10-07 Electron bean exposure device

Publications (1)

Publication Number Publication Date
JPS5764932A true JPS5764932A (en) 1982-04-20

Family

ID=15275602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14074080A Pending JPS5764932A (en) 1980-10-07 1980-10-07 Electron bean exposure device

Country Status (1)

Country Link
JP (1) JPS5764932A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262419A (en) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd Pattern forming device and production of semiconductor device utilizing the same
JPS61283121A (en) * 1985-06-10 1986-12-13 Nippon Telegr & Teleph Corp <Ntt> Charged beam projecting exposure device
WO1999059183A1 (en) * 1998-05-11 1999-11-18 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262419A (en) * 1984-06-08 1985-12-25 Matsushita Electric Ind Co Ltd Pattern forming device and production of semiconductor device utilizing the same
JPS61283121A (en) * 1985-06-10 1986-12-13 Nippon Telegr & Teleph Corp <Ntt> Charged beam projecting exposure device
WO1999059183A1 (en) * 1998-05-11 1999-11-18 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus
US6218060B1 (en) 1998-05-11 2001-04-17 Advantest Corporation Electron beam exposure method and electron beam exposure apparatus

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