JPS5669826A - Ion injector - Google Patents

Ion injector

Info

Publication number
JPS5669826A
JPS5669826A JP14445379A JP14445379A JPS5669826A JP S5669826 A JPS5669826 A JP S5669826A JP 14445379 A JP14445379 A JP 14445379A JP 14445379 A JP14445379 A JP 14445379A JP S5669826 A JPS5669826 A JP S5669826A
Authority
JP
Japan
Prior art keywords
ion
electromagnet
disc
slit
scanning electromagnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14445379A
Other languages
Japanese (ja)
Other versions
JPS623543B2 (en
Inventor
Toshimichi Taya
Atsushi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14445379A priority Critical patent/JPS5669826A/en
Publication of JPS5669826A publication Critical patent/JPS5669826A/en
Publication of JPS623543B2 publication Critical patent/JPS623543B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To miniaturize the subject ion injector and to increase its performance and productivity by a method wherein the ion beam generated at an ion source is irradiated on the two rotary discs, whereon a wafer has been pasted, using a fan-typed electromagnet and a deflected scanning electromagnet, and the two rotary discs are used alternately. CONSTITUTION:The ion beam 2 coming from the ion source 1 is mass-separated by the fan-typed electromagnet 3 and the specific kind ion alone is emitted from a slit 4 through the deflected scanning electromagnet. Also the rotary disc 8 is provided opposing the slit 4, a plurality of wafers 7 are pasted around the rotary disc directing to the slit 4, the magnetic force of the deflected scanning electromagnet is changed periodically, the specific kind ion is reciprocally moved within the diameter range of the wafer 7 while the disc 8 is rotated and the ion injection is performed. In this constitution, a rotary disc 9 of the same construction as the disc 8 is pasted here in the same manner, the travelling direction of the specific kind ion is changed by inverting the polarity of the deflected scanning electromagnet 10 and the ion injection is performed. Thus the discs 8 and 9 are used alternately and the productivity is increased.
JP14445379A 1979-11-09 1979-11-09 Ion injector Granted JPS5669826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14445379A JPS5669826A (en) 1979-11-09 1979-11-09 Ion injector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14445379A JPS5669826A (en) 1979-11-09 1979-11-09 Ion injector

Publications (2)

Publication Number Publication Date
JPS5669826A true JPS5669826A (en) 1981-06-11
JPS623543B2 JPS623543B2 (en) 1987-01-26

Family

ID=15362589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14445379A Granted JPS5669826A (en) 1979-11-09 1979-11-09 Ion injector

Country Status (1)

Country Link
JP (1) JPS5669826A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310545A1 (en) 1982-03-24 1983-10-06 Hitachi Ltd NON-MASS ANALYZED ION IMPLANTATION PROCEDURE
JPS62112845U (en) * 1986-01-08 1987-07-18

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531185A (en) * 1976-06-24 1978-01-07 Daicel Chem Ind Ltd Adsorbent for oily substances
JPS5478091A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Ion implanting unit
JPS5648052A (en) * 1979-09-17 1981-05-01 Varian Associates Method of double deflecting and scanning charged particle beam and condenser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531185A (en) * 1976-06-24 1978-01-07 Daicel Chem Ind Ltd Adsorbent for oily substances
JPS5478091A (en) * 1977-12-05 1979-06-21 Hitachi Ltd Ion implanting unit
JPS5648052A (en) * 1979-09-17 1981-05-01 Varian Associates Method of double deflecting and scanning charged particle beam and condenser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3310545A1 (en) 1982-03-24 1983-10-06 Hitachi Ltd NON-MASS ANALYZED ION IMPLANTATION PROCEDURE
JPS62112845U (en) * 1986-01-08 1987-07-18

Also Published As

Publication number Publication date
JPS623543B2 (en) 1987-01-26

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