JPS56132736A - Electron gun - Google Patents

Electron gun

Info

Publication number
JPS56132736A
JPS56132736A JP3476680A JP3476680A JPS56132736A JP S56132736 A JPS56132736 A JP S56132736A JP 3476680 A JP3476680 A JP 3476680A JP 3476680 A JP3476680 A JP 3476680A JP S56132736 A JPS56132736 A JP S56132736A
Authority
JP
Japan
Prior art keywords
crystal
discharged
chip
lab6
electron gun
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3476680A
Other languages
Japanese (ja)
Inventor
Isao Sasaki
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3476680A priority Critical patent/JPS56132736A/en
Publication of JPS56132736A publication Critical patent/JPS56132736A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current
    • H01J1/16—Cathodes heated directly by an electric current characterised by the shape

Landscapes

  • Electron Sources, Ion Sources (AREA)
  • Solid Thermionic Cathode (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To provide both the circular crossover configuration and the circular emission pattern of an electron gun without causing any increase of the heating temperature and the bias voltage of the gun, by assigning a special crystal surface to the top surface of a single crystal chip of LaB6, and by forcing electrons to be discharged from this crystal surface. CONSTITUTION:To the top surface of a single crystal chip of LaB6 is assigned a crystal surface possessing a crystal orientation of <320>, or the one slanted from <320> by less than 15 deg., or equivalent to any one of these. Electrons are discharged from this crystal surface at a temperature over 1,450 deg.C. The surface of <320>, appears only on the top of chip end, and electron beams are discharged only from this top.
JP3476680A 1980-03-21 1980-03-21 Electron gun Pending JPS56132736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3476680A JPS56132736A (en) 1980-03-21 1980-03-21 Electron gun

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3476680A JPS56132736A (en) 1980-03-21 1980-03-21 Electron gun

Publications (1)

Publication Number Publication Date
JPS56132736A true JPS56132736A (en) 1981-10-17

Family

ID=12423421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3476680A Pending JPS56132736A (en) 1980-03-21 1980-03-21 Electron gun

Country Status (1)

Country Link
JP (1) JPS56132736A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223323A (en) * 1982-06-22 1983-12-24 Toshiba Corp Electron-beam drawing device
JPS59232414A (en) * 1983-06-16 1984-12-27 Toshiba Corp Pattern drawing apparatus by variably formed charged particle beam
JPH10106926A (en) * 1996-10-01 1998-04-24 Nikon Corp Charged particle radiation lithography device, its evaluation method and pattern forming method
JP2003086127A (en) * 2001-09-10 2003-03-20 Toshiba Corp Electron beam device and device manufacturing method using it

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223323A (en) * 1982-06-22 1983-12-24 Toshiba Corp Electron-beam drawing device
JPH0415609B2 (en) * 1982-06-22 1992-03-18 Tokyo Shibaura Electric Co
JPS59232414A (en) * 1983-06-16 1984-12-27 Toshiba Corp Pattern drawing apparatus by variably formed charged particle beam
JPH10106926A (en) * 1996-10-01 1998-04-24 Nikon Corp Charged particle radiation lithography device, its evaluation method and pattern forming method
JP2003086127A (en) * 2001-09-10 2003-03-20 Toshiba Corp Electron beam device and device manufacturing method using it

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