DE19714690C2 - Herstellungsverfahren für einen Dünnschichttransistor, Dünnschichttransistor und daraus aufgebaute Flüssigkristallanzeigevorrichtung - Google Patents
Herstellungsverfahren für einen Dünnschichttransistor, Dünnschichttransistor und daraus aufgebaute FlüssigkristallanzeigevorrichtungInfo
- Publication number
- DE19714690C2 DE19714690C2 DE19714690A DE19714690A DE19714690C2 DE 19714690 C2 DE19714690 C2 DE 19714690C2 DE 19714690 A DE19714690 A DE 19714690A DE 19714690 A DE19714690 A DE 19714690A DE 19714690 C2 DE19714690 C2 DE 19714690C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor layer
- island
- electrode
- doped semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 19
- 239000010409 thin film Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 100
- 238000002161 passivation Methods 0.000 claims description 42
- 238000009413 insulation Methods 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 27
- 239000011159 matrix material Substances 0.000 claims description 17
- 238000000059 patterning Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910018594 Si-Cu Inorganic materials 0.000 description 2
- 229910008332 Si-Ti Inorganic materials 0.000 description 2
- 229910008465 Si—Cu Inorganic materials 0.000 description 2
- 229910006749 Si—Ti Inorganic materials 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960010637A KR100202236B1 (ko) | 1996-04-09 | 1996-04-09 | 액티브 매트릭스 기판의 제조방법 및 그 방법에 의해 제조되는 액티브 매트릭스 기판 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE19714690A1 DE19714690A1 (de) | 1997-10-30 |
| DE19714690C2 true DE19714690C2 (de) | 2003-12-11 |
Family
ID=19455336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19714690A Expired - Lifetime DE19714690C2 (de) | 1996-04-09 | 1997-04-09 | Herstellungsverfahren für einen Dünnschichttransistor, Dünnschichttransistor und daraus aufgebaute Flüssigkristallanzeigevorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| JP (2) | JP4034376B2 (ja) |
| KR (1) | KR100202236B1 (ja) |
| DE (1) | DE19714690C2 (ja) |
| FR (1) | FR2747237B1 (ja) |
| GB (1) | GB2312092B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100538293B1 (ko) * | 1998-04-03 | 2006-03-17 | 삼성전자주식회사 | 평면 구동 방식 액정 표시 장치의 제조 방법 |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| KR100980015B1 (ko) * | 2003-08-19 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| KR102183920B1 (ko) | 2013-12-16 | 2020-11-30 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| CN104022126B (zh) * | 2014-05-28 | 2017-04-12 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2629743B2 (ja) * | 1987-10-08 | 1997-07-16 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
| US5173753A (en) * | 1989-08-10 | 1992-12-22 | Industrial Technology Research Institute | Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance |
| US5130263A (en) * | 1990-04-17 | 1992-07-14 | General Electric Company | Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
| EP0476701B1 (en) * | 1990-09-21 | 1995-12-13 | Casio Computer Company Limited | A thin-film transistor and a thin film transistor panel using thin-film transistors of this type |
| JPH04505832A (ja) * | 1990-10-05 | 1992-10-08 | ゼネラル・エレクトリック・カンパニイ | 改良されたソース／ドレイン接点を持つ薄膜トランジスタ構造 |
| KR920010885A (ko) * | 1990-11-30 | 1992-06-27 | 카나이 쯔또무 | 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치 |
| EP0545327A1 (en) * | 1991-12-02 | 1993-06-09 | Matsushita Electric Industrial Co., Ltd. | Thin-film transistor array for use in a liquid crystal display |
| EP0566838A3 (en) * | 1992-02-21 | 1996-07-31 | Matsushita Electric Ind Co Ltd | Manufacturing method of thin film transistor |
| US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
-
1996
- 1996-04-09 KR KR1019960010637A patent/KR100202236B1/ko not_active IP Right Cessation
-
1997
- 1997-03-11 FR FR9702841A patent/FR2747237B1/fr not_active Expired - Lifetime
- 1997-04-04 GB GB9706824A patent/GB2312092B/en not_active Expired - Lifetime
- 1997-04-08 JP JP10525597A patent/JP4034376B2/ja not_active Expired - Lifetime
- 1997-04-09 DE DE19714690A patent/DE19714690C2/de not_active Expired - Lifetime
-
2007
- 2007-03-09 JP JP2007059644A patent/JP4117369B2/ja not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| NICHTS ERMITTELT * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007206712A (ja) | 2007-08-16 |
| FR2747237A1 (fr) | 1997-10-10 |
| JP4117369B2 (ja) | 2008-07-16 |
| FR2747237B1 (fr) | 1999-04-16 |
| GB2312092B (en) | 1998-06-03 |
| DE19714690A1 (de) | 1997-10-30 |
| KR970072497A (ko) | 1997-11-07 |
| GB9706824D0 (en) | 1997-05-21 |
| JPH1039331A (ja) | 1998-02-13 |
| GB2312092A (en) | 1997-10-15 |
| KR100202236B1 (ko) | 1999-07-01 |
| JP4034376B2 (ja) | 2008-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8127 | New person/name/address of the applicant |
Owner name: LG PHILIPS LCD CO., LTD., SEOUL/SOUL, KR |
|
| 8304 | Grant after examination procedure | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: LG DISPLAY CO., LTD., SEOUL, KR |
|
| R071 | Expiry of right |