FR2747237B1 - Dispositif d'affichage a cristal liquide et son procede de fabrication - Google Patents

Dispositif d'affichage a cristal liquide et son procede de fabrication

Info

Publication number
FR2747237B1
FR2747237B1 FR9702841A FR9702841A FR2747237B1 FR 2747237 B1 FR2747237 B1 FR 2747237B1 FR 9702841 A FR9702841 A FR 9702841A FR 9702841 A FR9702841 A FR 9702841A FR 2747237 B1 FR2747237 B1 FR 2747237B1
Authority
FR
France
Prior art keywords
manufacturing
liquid crystal
display device
crystal display
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9702841A
Other languages
English (en)
Other versions
FR2747237A1 (fr
Inventor
Ki Hyun Lyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of FR2747237A1 publication Critical patent/FR2747237A1/fr
Application granted granted Critical
Publication of FR2747237B1 publication Critical patent/FR2747237B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
FR9702841A 1996-04-09 1997-03-11 Dispositif d'affichage a cristal liquide et son procede de fabrication Expired - Lifetime FR2747237B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960010637A KR100202236B1 (ko) 1996-04-09 1996-04-09 액티브 매트릭스 기판의 제조방법 및 그 방법에 의해 제조되는 액티브 매트릭스 기판

Publications (2)

Publication Number Publication Date
FR2747237A1 FR2747237A1 (fr) 1997-10-10
FR2747237B1 true FR2747237B1 (fr) 1999-04-16

Family

ID=19455336

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9702841A Expired - Lifetime FR2747237B1 (fr) 1996-04-09 1997-03-11 Dispositif d'affichage a cristal liquide et son procede de fabrication

Country Status (5)

Country Link
JP (2) JP4034376B2 (fr)
KR (1) KR100202236B1 (fr)
DE (1) DE19714690C2 (fr)
FR (1) FR2747237B1 (fr)
GB (1) GB2312092B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100538293B1 (ko) * 1998-04-03 2006-03-17 삼성전자주식회사 평면 구동 방식 액정 표시 장치의 제조 방법
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
KR100980015B1 (ko) * 2003-08-19 2010-09-03 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR102183920B1 (ko) 2013-12-16 2020-11-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
CN104022126B (zh) * 2014-05-28 2017-04-12 京东方科技集团股份有限公司 一种阵列基板、其制作方法及显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2629743B2 (ja) * 1987-10-08 1997-07-16 カシオ計算機株式会社 薄膜トランジスタの製造方法
US5173753A (en) * 1989-08-10 1992-12-22 Industrial Technology Research Institute Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance
US5130263A (en) * 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
EP0476701B1 (fr) * 1990-09-21 1995-12-13 Casio Computer Company Limited Transistor en couche mince et panneau de transistors en couche mince utilisant des transistors en couche mince de ce type
JPH04505832A (ja) * 1990-10-05 1992-10-08 ゼネラル・エレクトリック・カンパニイ 改良されたソース／ドレイン接点を持つ薄膜トランジスタ構造
KR920010885A (ko) * 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
EP0545327A1 (fr) * 1991-12-02 1993-06-09 Matsushita Electric Industrial Co., Ltd. Réseau de transistors à couche mince pour une utilisation dans un afficheur à cristaux liquides
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Ind Co Ltd Manufacturing method of thin film transistor
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Also Published As

Publication number Publication date
JP2007206712A (ja) 2007-08-16
FR2747237A1 (fr) 1997-10-10
JP4117369B2 (ja) 2008-07-16
GB2312092B (en) 1998-06-03
DE19714690A1 (de) 1997-10-30
KR970072497A (ko) 1997-11-07
GB9706824D0 (en) 1997-05-21
JPH1039331A (ja) 1998-02-13
GB2312092A (en) 1997-10-15
DE19714690C2 (de) 2003-12-11
KR100202236B1 (ko) 1999-07-01
JP4034376B2 (ja) 2008-01-16

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