GB2312092B - Liquid crystal display and method of manufacturing the same - Google Patents

Liquid crystal display and method of manufacturing the same

Info

Publication number
GB2312092B
GB2312092B GB9706824A GB9706824A GB2312092B GB 2312092 B GB2312092 B GB 2312092B GB 9706824 A GB9706824 A GB 9706824A GB 9706824 A GB9706824 A GB 9706824A GB 2312092 B GB2312092 B GB 2312092B
Authority
GB
Grant status
Grant
Patent type
Prior art keywords
manufacturing
same
method
liquid crystal
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9706824A
Other versions
GB9706824D0 (en )
GB2312092A (en )
Inventor
Ki-Hynn Lyn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78663Amorphous silicon transistors
    • H01L29/78669Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
GB9706824A 1996-04-09 1997-04-04 Liquid crystal display and method of manufacturing the same Expired - Lifetime GB2312092B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR19960010637A KR100202236B1 (en) 1996-04-09 1996-04-09 Active matrix panel and its making method

Publications (3)

Publication Number Publication Date
GB9706824D0 GB9706824D0 (en) 1997-05-21
GB2312092A true GB2312092A (en) 1997-10-15
GB2312092B true GB2312092B (en) 1998-06-03

Family

ID=19455336

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9706824A Expired - Lifetime GB2312092B (en) 1996-04-09 1997-04-04 Liquid crystal display and method of manufacturing the same

Country Status (5)

Country Link
JP (2) JP4034376B2 (en)
KR (1) KR100202236B1 (en)
DE (1) DE19714690C2 (en)
FR (1) FR2747237B1 (en)
GB (1) GB2312092B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8013346B2 (en) 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US8421135B2 (en) 2000-12-11 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
WO2015180269A1 (en) * 2014-05-28 2015-12-03 京东方科技集团股份有限公司 Array substrate and manufacturing method therefor, and display apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100980015B1 (en) * 2003-08-19 2010-09-03 삼성전자주식회사 Thin film transistor array panel and manufacturing method thereof
KR20150070491A (en) 2013-12-16 2015-06-25 삼성디스플레이 주식회사 Thin film transistor array panel and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195560A (en) * 1987-10-08 1989-04-13 Casio Comput Co Ltd Manufacture of thin-film transistor
US5294811A (en) * 1990-11-30 1994-03-15 Hitachi, Ltd. Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173753A (en) * 1989-08-10 1992-12-22 Industrial Technology Research Institute Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance
US5130263A (en) * 1990-04-17 1992-07-14 General Electric Company Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer
DE69115405T2 (en) * 1990-09-21 1996-06-13 Casio Computer Co Ltd Thin film transistor and a thin-film transistor panels, using such transistors
DE69116337D1 (en) * 1990-10-05 1996-02-22 Gen Electric Thin film transistor structure with improved source / drain contacts
EP0566838A3 (en) * 1992-02-21 1996-07-31 Matsushita Electric Ind Co Ltd Manufacturing method of thin film transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0195560A (en) * 1987-10-08 1989-04-13 Casio Comput Co Ltd Manufacture of thin-film transistor
US5294811A (en) * 1990-11-30 1994-03-15 Hitachi, Ltd. Thin film semiconductor device having inverted stagger structure, and device having such semiconductor device
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, Section E, Section No 794, Vol 13, No 333, Pg 16, 26/7/89 & JP01-095560A *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421135B2 (en) 2000-12-11 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US8013346B2 (en) 2000-12-21 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9231044B2 (en) 2000-12-21 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
WO2015180269A1 (en) * 2014-05-28 2015-12-03 京东方科技集团股份有限公司 Array substrate and manufacturing method therefor, and display apparatus

Also Published As

Publication number Publication date Type
FR2747237A1 (en) 1997-10-10 application
KR100202236B1 (en) 1999-07-01 grant
JP4117369B2 (en) 2008-07-16 grant
JP4034376B2 (en) 2008-01-16 grant
DE19714690A1 (en) 1997-10-30 application
JPH1039331A (en) 1998-02-13 application
GB9706824D0 (en) 1997-05-21 grant
GB2312092A (en) 1997-10-15 application
FR2747237B1 (en) 1999-04-16 grant
DE19714690C2 (en) 2003-12-11 grant
JP2007206712A (en) 2007-08-16 application

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20170403